High temperature precipitation kinetics and ttt curve of a 7xxx alloy by in-situ electrical resistivity measurements and differential calorimetry

2000 ◽  
Vol 42 (7) ◽  
pp. 675-680 ◽  
Author(s):  
Pierre Archambault ◽  
David Godard
Author(s):  
W. E. King

A side-entry type, helium-temperature specimen stage that has the capability of in-situ electrical-resistivity measurements has been designed and developed for use in the AEI-EM7 1200-kV electron microscope at Argonne National Laboratory. The electrical-resistivity measurements complement the high-voltage electron microscope (HVEM) to yield a unique opportunity to investigate defect production in metals by electron irradiation over a wide range of defect concentrations.A flow cryostat that uses helium gas as a coolant is employed to attain and maintain any specified temperature between 10 and 300 K. The helium gas coolant eliminates the vibrations that arise from boiling liquid helium and the temperature instabilities due to alternating heat-transfer mechanisms in the two-phase temperature regime (4.215 K). Figure 1 shows a schematic view of the liquid/gaseous helium transfer system. A liquid-gas mixture can be used for fast cooldown. The cold tip of the transfer tube is inserted coincident with the tilt axis of the specimen stage, and the end of the coolant flow tube is positioned without contact within the heat exchanger of the copper specimen block (Fig. 2).


2018 ◽  
Vol 32 (8) ◽  
pp. 2467-2469
Author(s):  
S. Muruganantham ◽  
S. Kumararaman ◽  
N. R. Tamilselvan ◽  
T. Thaila ◽  
K. Subbaraman

1989 ◽  
Vol 44 (12) ◽  
pp. 1167-1171 ◽  
Author(s):  
G. Chiodelli ◽  
G. Campari-Viganò ◽  
G. Flor

Abstract Electrical resistivity measurements were carried out on polycrystalline YBa2Cu3O7-x at temperatures 300 < T < 1023 K and oxygen partial pressures 5 ·10-7 ≤ po2 ≤ 1 atm. The samples, equilibrated in the range from 5 ·10-4 to 1 atm, show metallic behaviour, the one equilibrated at po2 = 2 ·10-5 shows a transition between metallic and semiconducting behaviour at 920 K, and that equilibrated at po2 = 5 ·10-7 shows semiconducting behaviour: for the latter the relevant resistivity is due to the oxygen-ion migration. The isotherms log σ vs. log po2 (in the temperature range from 723 to 1023 K) show slopes of about 1/6 at 723 K (orthorhombic phase) and about 1/2 at 1023 K (tetragonal phase). These results are discussed in terms of appropriate defect models.


2008 ◽  
Vol 476 (1-2) ◽  
pp. 60-68 ◽  
Author(s):  
Fabien Bruneseaux ◽  
Elisabeth Aeby-Gautier ◽  
Guillaume Geandier ◽  
Julien Da Costa Teixeira ◽  
Benoît Appolaire ◽  
...  

2020 ◽  
Vol 825 ◽  
pp. 154108
Author(s):  
I.-E. Benrabah ◽  
G. Altinkurt ◽  
M. Fèvre ◽  
M. Dehmas ◽  
B. Denand ◽  
...  

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