MBE growth of ferromagnetic single crystal Heusler alloys on (0 0 1)Ga1−xInxAs

2001 ◽  
Vol 10 (1-3) ◽  
pp. 428-432 ◽  
Author(s):  
J.W. Dong ◽  
J. Lu ◽  
J.Q. Xie ◽  
L.C. Chen ◽  
R.D. James ◽  
...  
Keyword(s):  
Single Crystal ◽  
Heusler Alloys ◽  
Mbe Growth

scholarly journals MBE growth and donor doping of coherent ultrawide bandgap AlGaN alloy layers on single-crystal AlN substrates

2021 ◽  
Vol 118 (9) ◽  
pp. 092101
Author(s):  
Kevin Lee ◽  
Ryan Page ◽  
Vladimir Protasenko ◽  
Leo J. Schowalter ◽  
Masato Toita ◽  
...  
Keyword(s):  
Single Crystal ◽  
Mbe Growth ◽  
Donor Doping

Epitaxial Lateral Overgrowth of GaN on SiC and Sapphire Substrates

1998 ◽  
Vol 537 ◽  
Author(s):  
Zhonghai Yu ◽  
M.A.L. Johnson ◽  
J.D. Brown ◽  
N.A. El-Masry ◽  
J. F. Muth ◽  
...  
Keyword(s):  
Single Crystal ◽  
Epitaxial Lateral Overgrowth ◽  
Threading Dislocations ◽  
Growth Processes ◽  
Mbe Growth ◽  
Sapphire Substrates ◽  
Lateral Overgrowth ◽  
Movpe Growth ◽  
Gan Film ◽  
Growth Experiments

AbstractThe epitaxial lateral overgrowth (ELO) process for GaN has been studied using SiC and sapphire substrates. Both MBE and MOVPE growth processes were employed in the study. The use of SiO2 versus SiNx insulator stripes was investigated using window/stripe widths ranging from 2 μm/4 μm to 3 μm/15 μm. GaN film depositions were completed at temperatures ranging from 800°C to 1120°C. Characterization experiments included RHEED, TEM, SEM and cathodolumenescence studies. The MBE growth experiments produced polycrystalline GaN over the insulator stripes even at deposition temperatures as high as 990°C. In contrast, MOVPE growth produced single-crystal GaN stripes with no observable threading dislocations.

MBE growth of single crystal α-Fe films on ZnSe (001) and (110)

1987 ◽  
Vol 81 (1-4) ◽  
pp. 524-529 ◽  
Author(s):  
B.T. Jonker ◽  
J.J. Krebs ◽  
G.A. Prinz ◽  
S.B. Qadri
Keyword(s):  
Single Crystal ◽  
Mbe Growth

Monte Carlo and first-principles approaches for single crystal and polycrystalline Ni2MnGa Heusler alloys

2014 ◽  
Vol 47 (42) ◽  
pp. 425002 ◽  
Author(s):  
V V Sokolovskiy ◽  
O Pavlukhina ◽  
V D Buchelnikov ◽  
P Entel
Keyword(s):  
Monte Carlo ◽  
Single Crystal ◽  
First Principles ◽  
Heusler Alloys

Growth and magnetic properties of single crystal Co/sub 2/MnX (X=Si,Ge) Heusler alloys

2001 ◽  
Vol 37 (4) ◽  
pp. 2176-2178 ◽  
Author(s):  
S.F. Cheng ◽  
B. Nadgomy ◽  
K. Bussmann ◽  
E.E. Carpenter ◽  
B.N. Das ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Single Crystal ◽  
Heusler Alloys

scholarly journals Epitaxial Lateral Overgrowth of GaN on SiC and Sapphire Substrates

1999 ◽  
Vol 4 (S1) ◽  
pp. 447-452
Author(s):  
Zhonghai Yu ◽  
M.A.L. Johnson ◽  
J.D. Brown ◽  
N.A. El-Masry ◽  
J. F. Muth ◽  
...  
Keyword(s):  
Single Crystal ◽  
Epitaxial Lateral Overgrowth ◽  
Threading Dislocations ◽  
Growth Processes ◽  
Mbe Growth ◽  
Sapphire Substrates ◽  
Lateral Overgrowth ◽  
Movpe Growth ◽  
Gan Film ◽  
Growth Experiments

The epitaxial lateral overgrowth (ELO) process for GaN has been studied using SiC and sapphire substrates. Both MBE and MOVPE growth processes were employed in the study. The use of SiO2 versus SiNx insulator stripes was investigated using window/stripe widths ranging from 20 μm/4 μm to 3 μm/15 μm. GaN film depositions were completed at temperatures ranging from 800 °C to 1120 °C. Characterization experiments included RHEED, TEM, SEM and cathodolumenescence studies. The MBE growth experiments produced polycrystalline GaN over the insulator stripes even at deposition temperatures as high as 990 °C. In contrast, MOVPE growth produced single-crystal GaN stripes with no observable threading dislocations.

Surface control and MBE growth diagram for homoepitaxy on single-crystal AlN substrates

2020 ◽  
Vol 116 (26) ◽  
pp. 262102
Author(s):  
Kevin Lee ◽  
YongJin Cho ◽  
Leo J. Schowalter ◽  
Masato Toita ◽  
Huili Grace Xing ◽  
...  
Keyword(s):  
Single Crystal ◽  
Mbe Growth ◽  
Surface Control ◽  
Growth Diagram
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