MBE growth of single crystal α-Fe films on ZnSe (001) and (110)

1987 ◽  
Vol 81 (1-4) ◽  
pp. 524-529 ◽  
Author(s):  
B.T. Jonker ◽  
J.J. Krebs ◽  
G.A. Prinz ◽  
S.B. Qadri
Keyword(s):  
Single Crystal ◽  
Mbe Growth

scholarly journals MBE growth and donor doping of coherent ultrawide bandgap AlGaN alloy layers on single-crystal AlN substrates

2021 ◽  
Vol 118 (9) ◽  
pp. 092101
Author(s):  
Kevin Lee ◽  
Ryan Page ◽  
Vladimir Protasenko ◽  
Leo J. Schowalter ◽  
Masato Toita ◽  
...  
Keyword(s):  
Single Crystal ◽  
Mbe Growth ◽  
Donor Doping

Epitaxial Lateral Overgrowth of GaN on SiC and Sapphire Substrates

1998 ◽  
Vol 537 ◽  
Author(s):  
Zhonghai Yu ◽  
M.A.L. Johnson ◽  
J.D. Brown ◽  
N.A. El-Masry ◽  
J. F. Muth ◽  
...  
Keyword(s):  
Single Crystal ◽  
Epitaxial Lateral Overgrowth ◽  
Threading Dislocations ◽  
Growth Processes ◽  
Mbe Growth ◽  
Sapphire Substrates ◽  
Lateral Overgrowth ◽  
Movpe Growth ◽  
Gan Film ◽  
Growth Experiments

AbstractThe epitaxial lateral overgrowth (ELO) process for GaN has been studied using SiC and sapphire substrates. Both MBE and MOVPE growth processes were employed in the study. The use of SiO2 versus SiNx insulator stripes was investigated using window/stripe widths ranging from 2 μm/4 μm to 3 μm/15 μm. GaN film depositions were completed at temperatures ranging from 800°C to 1120°C. Characterization experiments included RHEED, TEM, SEM and cathodolumenescence studies. The MBE growth experiments produced polycrystalline GaN over the insulator stripes even at deposition temperatures as high as 990°C. In contrast, MOVPE growth produced single-crystal GaN stripes with no observable threading dislocations.

MBE growth of ferromagnetic single crystal Heusler alloys on (0 0 1)Ga1−xInxAs

2001 ◽  
Vol 10 (1-3) ◽  
pp. 428-432 ◽  
Author(s):  
J.W. Dong ◽  
J. Lu ◽  
J.Q. Xie ◽  
L.C. Chen ◽  
R.D. James ◽  
...  
Keyword(s):  
Single Crystal ◽  
Heusler Alloys ◽  
Mbe Growth

scholarly journals Epitaxial Lateral Overgrowth of GaN on SiC and Sapphire Substrates

1999 ◽  
Vol 4 (S1) ◽  
pp. 447-452
Author(s):  
Zhonghai Yu ◽  
M.A.L. Johnson ◽  
J.D. Brown ◽  
N.A. El-Masry ◽  
J. F. Muth ◽  
...  
Keyword(s):  
Single Crystal ◽  
Epitaxial Lateral Overgrowth ◽  
Threading Dislocations ◽  
Growth Processes ◽  
Mbe Growth ◽  
Sapphire Substrates ◽  
Lateral Overgrowth ◽  
Movpe Growth ◽  
Gan Film ◽  
Growth Experiments

The epitaxial lateral overgrowth (ELO) process for GaN has been studied using SiC and sapphire substrates. Both MBE and MOVPE growth processes were employed in the study. The use of SiO2 versus SiNx insulator stripes was investigated using window/stripe widths ranging from 20 μm/4 μm to 3 μm/15 μm. GaN film depositions were completed at temperatures ranging from 800 °C to 1120 °C. Characterization experiments included RHEED, TEM, SEM and cathodolumenescence studies. The MBE growth experiments produced polycrystalline GaN over the insulator stripes even at deposition temperatures as high as 990 °C. In contrast, MOVPE growth produced single-crystal GaN stripes with no observable threading dislocations.

Surface control and MBE growth diagram for homoepitaxy on single-crystal AlN substrates

2020 ◽  
Vol 116 (26) ◽  
pp. 262102
Author(s):  
Kevin Lee ◽  
YongJin Cho ◽  
Leo J. Schowalter ◽  
Masato Toita ◽  
Huili Grace Xing ◽  
...  
Keyword(s):  
Single Crystal ◽  
Mbe Growth ◽  
Surface Control ◽  
Growth Diagram

Properties of Patterned Gallium Arsenide on Silicon

1988 ◽  
Vol 116 ◽  
Author(s):  
R.J. Matyi ◽  
H. Shichijo ◽  
T.S. Kim ◽  
H.L. Tsai
Keyword(s):  
Single Crystal ◽  
Hall Mobility ◽  
Defect Structure ◽  
Specific Growth ◽  
Feature Size ◽  
Mbe Growth ◽  
Gaas Mesfet ◽  
Mos Devices ◽  
Convenient Means ◽  
Crystal Gaas

AbstractThe growth of GaAs on Si by MBE through openings in an oxide or nitride represents a convenient means for achieving monolithic GaAs/Si integration. We have examined a number of the materials growth and processing issues that must be resolved in order to achieve this goal. Some of the specific areas that have been investigated are (a) the effect of trench etching on the morphology of the patterned GaAs; (b) the dependence of patterned feature size on Hall mobility in both as-grown and postgrowth annealed samples; (c) the effect of annealing on the defect structure in the transition region from single crystal GaAs to polycrystalline growth; (d) the dependence of GaAs MESFET performance on proximity to the polycrystal transition; and (e) the performance of Si MOS devices following the GaAs MBE growth. Specific growth and processing issues concerning the integration of GaAs and Si device functions have also been examined.

A Preparation of High Resolution Standards for Electron Microscopy. Part II

1971 ◽  
Vol 29 ◽  
pp. 160-161
Author(s):  
Akira Tanaka ◽  
David F. Harling
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Carbon Black ◽  
Single Crystal ◽  
Dark Field ◽  
Graphitized Carbon Black ◽  
Graphitized Carbon ◽  
Dark Field Imaging ◽  
Crystal Films ◽  
Micro Holes

In the previous paper, the author reported on a technique for preparing vapor-deposited single crystal films as high resolution standards for electron microscopy. The present paper is intended to describe the preparation of several high resolution standards for dark field microscopy and also to mention some results obtained from these studies. Three preparations were used initially: 1.) Graphitized carbon black, 2.) Epitaxially grown particles of different metals prepared by vapor deposition, and 3.) Particles grown epitaxially on the edge of micro-holes formed in a gold single crystal film.The authors successfully obtained dark field micrographs demonstrating the 3.4Å lattice spacing of graphitized carbon black and the Au single crystal (111) lattice of 2.35Å. The latter spacing is especially suitable for dark field imaging because of its preparation, as in 3.), above. After the deposited film of Au (001) orientation is prepared at 400°C the substrate temperature is raised, resulting in the formation of many square micro-holes caused by partial evaporation of the Au film.

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