Suppression of universal conductance fluctuations by an electric field in doped Si(P,B) near the metal–insulator transition
2003 ◽
Vol 18
(1-3)
◽
pp. 284-285
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2009 ◽
Vol 44
(19)
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pp. 5345-5353
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Keyword(s):
2002 ◽
Vol 2
(4)
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pp. 339-343
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2009 ◽
Vol 78
(8)
◽
pp. 083713
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Keyword(s):
Electric field induced metal–insulator transition in VO 2 thin film based on FTO/VO 2 /FTO structure
2016 ◽
Vol 75
◽
pp. 82-86
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Keyword(s):
2011 ◽
Vol 130-134
◽
pp. 1-4
2005 ◽
Vol 366
(1-4)
◽
pp. 146-152
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Keyword(s):