The effect of ultra-high-temperature heat treatment on the content of thiamine, vitamin B6 and vitamin B12 of milk

1965 ◽  
Vol 32 (1) ◽  
pp. 13-17 ◽  
Author(s):  
Margaret E. Gregory ◽  
H. Burton

SummaryResults are given for the effect of different ultra-high-temperature milk sterilizing processes on the thiamine, vitamin B6 and vitamin B12 contents of milk. For all the processes examined, the loss of thiamine is negligible, and the losses of vitamins B6 and B12 lie between zero and 35%. Indirect-heating processes appear to cause more loss of vitamin B12 than of vitamin B6, but the reverse is true of directheating processes.

Author(s):  
K.I. Nedashkovskiy ◽  
A.V. Gulshin ◽  
Yu.M. Averina ◽  
V.A. Naumkina ◽  
V.V. Menshikov ◽  
...  

The paper presents investigation results and a technology for manufacturing fastener workpieces out of the 07Kh16N6-Sh (07Х16Н6-Ш) steel using high-temperature heat treatment. The steel undergoing our testing was additionally doped with molybdenum, as reflected in the 07Kh16N6M-Sh (07Х16Н6М-Ш) designation, which facilitated grain refinement. We implemented accelerated climate testing of bolts in order to assess the corrosion cracking resistance of 07Kh16N6-Sh (07Х16Н6-Ш), 07Kh16N6M-Sh (07Х16Н6М-Ш) and 13Kh15N4AM3-Sh (13Х15Н4АМ3-Ш) steel fasteners in maritime climates.


Carbon ◽  
2009 ◽  
Vol 47 (1) ◽  
pp. 215-225 ◽  
Author(s):  
G.G. Kuvshinov ◽  
I.S. Chukanov ◽  
Y.L. Krutsky ◽  
V.V. Ochkov ◽  
V.I. Zaikovskii ◽  
...  

1984 ◽  
Vol 36 ◽  
Author(s):  
T. Kook ◽  
R. J. Jaccodine

ABSTRACTThe diffusion of various dopants( B, P, As, and Sb) in (111) silicon during high temperature( 1100°C ) heat treatment in nitrogen depends on the capping layers, i.e., SiO2, Si3 N4, and SiO2 + Si3 N4, layers. The junction motion of all dopants were retar ed in the bare silicon compared with that in the SiO2 + Si3 N4 capped silicon. The apparently retarded junction motion of As and sb diffused specimens in the bare silicon is due to the severe out-diffusion loss of dopant atoms and As and Sb diffusion are in fact enhanced during thermal nitridation of silicon in N2.


2003 ◽  
Vol 11 (2) ◽  
pp. 122-127 ◽  
Author(s):  
Yun-Soo Lim ◽  
Hee-Seok Kim ◽  
Myung-Soo Kim ◽  
Nam-Hee Cho ◽  
Sahn Nahm

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