Alternative Background Fitting for Electron Energy Loss Spectra

1982 ◽  
Vol 40 ◽  
pp. 496-497
Author(s):  
J. Bentley ◽  
G. L. Lehman ◽  
P. S. Sklad
Keyword(s):  
Energy Loss ◽  
Electron Energy ◽  
Analytical Electron ◽  
Inner Shell Ionization ◽  
True Edge ◽  
Integrated Intensities ◽  
Electron Energy Loss ◽  
Electron Excitations ◽  
Electron Energy Loss Spectra ◽  
Shell Ionization

Microanalysis using inner shell ionization edges in electron energy loss spectra obtained in an analytical electron microscope is now well established. In order to assess true edge profiles and obtain integrated intensities of the inner shell ionization edges of interest, it is first necessary to subtract the background. The background arises from the tails of preceding ionization edges, multiple plasmon excitations and valence electron excitations.

Inner Shell Ionization by 60 keV Electrons, Application to Microanalysis

1975 ◽  
Vol 33 ◽  
pp. 126-127
Author(s):  
Y. Kihn ◽  
J. Sevely ◽  
B. Jouffrey
Keyword(s):  
Electron Microscope ◽  
Energy Loss ◽  
Electron Energy ◽  
Selection Rules ◽  
First Approximation ◽  
Inner Shell Ionization ◽  
Electron Energy Loss ◽  
Electron Energy Loss Spectra ◽  
Shell Ionization

By using a Castaing-Henry filtering device adapted on a Siemens Elmiskop I electron microscope, we have directly observed plasmon and inner shell excitations by 60 keV electrons on electron energy loss spectra. Inner shell excitation edges have been detected up to 1900 eV.By comparing L and K inner shell excitation profiles in the case of Magnesium, Aluminium and Silicon, it is concluded that the optical selection rules, △1 = ±1, explain the shape of the spectrum after the edge in a first approximation.

Parallel Detection of Electron Energy Loss Spectra in Direct Mode

1990 ◽  
Vol 48 (2) ◽  
pp. 82-83
Author(s):  
Eckhard Quandt ◽  
Stephan laBarré ◽  
Andreas Hartmann ◽  
Heinz Niedrig
Keyword(s):  
Energy Loss ◽  
Electron Energy ◽  
Energy Resolution ◽  
Large Angle ◽  
Maximum Energy ◽  
Semiconductor Detectors ◽  
Parallel Detection ◽  
Photodiode Arrays ◽  
Electron Energy Loss ◽  
Electron Energy Loss Spectra

Due to the development of semiconductor detectors with high spatial resolution -- e.g. charge coupled devices (CCDs) or photodiode arrays (PDAs) -- the parallel detection of electron energy loss spectra (EELS) has become an important alternative to serial registration. Using parallel detection for recording of energy spectroscopic large angle convergent beam patterns (LACBPs) special selected scattering vectors and small detection apertures lead to very low intensities. Therefore the very sensitive direct irradiation of a cooled linear PDA instead of the common combination of scintillator, fibre optic, and semiconductor has been investigated. In order to obtain a sufficient energy resolution the spectra are optionally magnified by a quadrupole-lens system.The detector used is a Hamamatsu S2304-512Q linear PDA with 512 diodes and removed quartz-glas window. The sensor size is 13 μm ∗ 2.5 mm with an element spacing of 25 μm. Along with the dispersion of 3.5 μm/eV at 40 keV the maximum energy resolution is limited to about 7 eV, so that a magnification system should be attached for experiments requiring a better resolution.

The Use of ELNES for Microanalysis

1999 ◽  
Vol 5 (S2) ◽  
pp. 664-665
Author(s):  
A.J. Craven ◽  
M. MacKenzie
Keyword(s):  
Electron Microscopy ◽  
Energy Loss ◽  
Electron Energy ◽  
Analytical Electron Microscopy ◽  
Local Environment ◽  
Edge Structure ◽  
Similar Shape ◽  
Analytical Electron ◽  
Electron Energy Loss ◽  
Combining Information

The performance of many materials systems depends on our ability to control the distribution of atoms on a nanometre or sub-nanometre scale within those systems. This is as true for steels as it is for semiconductors. A key requirement for improving their performance is the ability to determine the distribution of the elements resulting from processing the material under a given set of conditions. Analytical electron microscopy (AEM) provides a range of powerful techniques with which to investigate this distribution. By combining information from different techniques, many of the ambiguities of interpretation of the data from an individual technique can be eliminated. The electron energy loss near edge structure (ELNES) present on an ionisation edge in the electron energy loss spectrum reflects the local structural and chemical environments in which the particular atomic species occurs. Thus it is a useful contribution to the information available. Since a similar local environment frequently results in a similar shape, ELNES is useful as a “fingerprint”.

Sign in / Sign up

Export Citation Format

Share Document