Direct Observations of the Epitaxial Growth of Sputtered Ag on Si

1973 ◽  
Vol 31 ◽  
pp. 122-123
Author(s):  
J. S. Maa ◽  
Thos. E. Hutchinson
Keyword(s):  
Epitaxial Growth ◽  
Film Growth ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Microscopy Technique ◽  
Direct Observations ◽  
In Situ Electron Microscopy ◽  
Beam Sputtering ◽  
The Subject

The growth of Ag films deposited on various substrate materials such as MoS2, mica, graphite, and MgO has been investigated extensively using the in situ electron microscopy technique. The three stages of film growth, namely, the nucleation, growth of islands followed by liquid-like coalescence have been observed in both the vacuum vapor deposited and ion beam sputtered thin films. The mechanisms of nucleation and growth of silver films formed by ion beam sputtering on the (111) plane of silicon comprise the subject of this paper. A novel mode of epitaxial growth is observed to that seen previously.The experimental arrangement for the present study is the same as previous experiments, and the preparation procedure for obtaining thin silicon substrate is presented in a separate paper.

In-situ epitaxial growth study of Bi/sub 2/(Sr,Ca)/sub 3/Cu/sub 2/O/sub x/ films by ion beam sputtering on cleaved MgO substrates

1991 ◽  
Vol 27 (2) ◽  
pp. 1205-1210 ◽  
Author(s):  
J. Fujita ◽  
T. Yoshitake ◽  
T. Satoh ◽  
T. Ichihashi ◽  
H. Igarashi
Keyword(s):  
Epitaxial Growth ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Growth Study ◽  
Beam Sputtering

Epitaxial growth of MgO thin films on silicon by dual ion beam sputtering

1993 ◽  
Vol 223 (1) ◽  
pp. 11-13 ◽  
Author(s):  
Yijie Li ◽  
Guangcheng Xiong ◽  
Guijun Lian ◽  
Jie Li ◽  
Zizhao Gan
Keyword(s):  
Thin Films ◽  
Epitaxial Growth ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Beam Sputtering ◽  
Dual Ion Beam Sputtering

Epitaxial growth of Fe on GaAs by ion beam sputtering

2001 ◽  
Vol 482-485 ◽  
pp. 872-877 ◽  
Author(s):  
F Monteverde ◽  
A Michel ◽  
Ph Guérin ◽  
J.-P Eymery
Keyword(s):  
Epitaxial Growth ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Beam Sputtering

Epitaxial growth and exchange biasing of PdMn/Fe bilayers grown by ion-beam sputtering

2001 ◽  
Vol 89 (11) ◽  
pp. 6597-6599 ◽  
Author(s):  
Ning Cheng ◽  
JaePyoung Ahn ◽  
Kannan M. Krishnan
Keyword(s):  
Epitaxial Growth ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Exchange Biasing ◽  
Beam Sputtering

La1−xBaxMnOz thin film growth by ion beam sputtering: effects of oxygen partial pressure

2001 ◽  
Vol 229 (1-4) ◽  
pp. 415-418 ◽  
Author(s):  
M. Tada ◽  
J. Yamada ◽  
V.V. Srinivasu ◽  
V. Sreedevi ◽  
H. Kohmoto ◽  
...  
Keyword(s):  
Thin Film ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Film Growth ◽  
Ion Beam ◽  
Thin Film Growth ◽  
Ion Beam Sputtering ◽  
Beam Sputtering

The Structure of Si and Ge Deposited by Ion Beam Sputtering

1985 ◽  
Vol 47 ◽  
Author(s):  
H. Windischmann ◽  
J. M. Cavese ◽  
R. W. Collins ◽  
R. D. Harris ◽  
J. Gonzalez-Hernandez
Keyword(s):  
Crystallization Temperature ◽  
Film Growth ◽  
Ion Beam ◽  
Operating Pressure ◽  
Ion Beam Sputtering ◽  
X Ray Diffraction ◽  
Oxygen Contamination ◽  
Beam Sputtering ◽  
Silicon And Germanium ◽  
Substrate Temperatures

ABSTRACTThe crystallinity for silicon and germanium films deposited by ion beam sputtering (IBS) as a function of substrate temperatures was determined using Raman spectroscopy, spectroscopic ellipsometry, electrical conductivity and x-ray diffraction measurements. The results show that IBS silicon crystallizes between 300–350°C while germanium crystallizes between 20–200°C. Reasonably good agreement is obtained among the four distinctively different characterization techniques in identifying the onset of crystallinity. A direct relationship is observed between the substrate temperature required for crystallization and the log of the operating pressure for various deposition techniques. Energetic particle stimulation during film growth appears to reduce the crystallization temperature at a given operating pressure. Raman data show that the crystallization temperature depends on the deposition rate. A graded structure is observed in films deposited above 300°C, probably due to oxygen contamination.

Study of Natural Oxidation of Ultra-Thin Aluminum Layers with In-Situ Resistance Measurement

1999 ◽  
Vol 569 ◽  
Author(s):  
C. Fery ◽  
W.E. Bailey ◽  
K. Yamada ◽  
S.X. Wang
Keyword(s):  
Ion Beam ◽  
Low Noise ◽  
Resistance Measurement ◽  
Ion Beam Sputtering ◽  
Oxidation Rates ◽  
Beam Sputtering ◽  
Noise Data ◽  
Set Up ◽  
Lock In

ABSTRACTExposure to oxygen (1 Torr) at room temperature of thin Al films deposited by UHV ion beam sputtering has been studied using an in-situ resistance measurement set-up. Two lock-in amplifiers allow low noise data acquisition. By monitoring the conductance during deposition and oxidation we can deduce the consumed Al thickness as a function of exposure time (t). It is found that the Al/vacuum interface is diffuse for electron scattering. A two-stage mechanism for natural oxidation is revealed: fast growth (for t<10s) followed by a slow logarithmic growth. A simple model based on interface reactions and place exchange describes the experimental results. The conductance drop after 5 minutes of oxidation is found to decrease for initial Al thicknesses below 30A. This suggests the oxidation rates slow down for thin initial Al thicknesses.

In situ preparation of Y/sub 1/Ba/sub 2/Cu/sub 3/O/sub 7-x/ thin films deposited by ion beam sputtering: preliminary results

1991 ◽  
Vol 27 (2) ◽  
pp. 2522-2524 ◽  
Author(s):  
S. Barbanera ◽  
F. Murtas ◽  
L. Scopa ◽  
V. Boffa ◽  
G. Paterno ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Preliminary Results ◽  
In Situ Preparation ◽  
Beam Sputtering
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