UHV microscopy of surfaces: Recent results

1989 ◽  
Vol 47 ◽  
pp. 550-551
Author(s):  
J.E. Bonevich ◽  
J.P. Zhang ◽  
M. Jacoby ◽  
R. Ai ◽  
D. Dunn ◽  
...  
Keyword(s):  
Surface Science ◽  
Gold Film ◽  
Ion Beam ◽  
High Vacuum ◽  
Auger Spectroscopy ◽  
Ultra High Vacuum ◽  
Ion Beam Sputtering ◽  
Optical Heating ◽  
Beam Sputtering ◽  
Better Than

In order to examine surfaces of materials, a prerequisite is a microscope which combines ultra-high vacuum (UHV) with surface science cleaning and characterization techniques such as ion beam sputtering, annealing, and Auger spectroscopy. In order to achieve this, we have mounted onto the side of a UHV-H9000 microscope LEED/Auger, an ion gun, and optical heating; in the transfer chamber specimens can be cleaned at a base pressure of 2×10-10 torr and transferred into the microscope which operates at pressures better than 2×10-10 torr. With this marriage, it is relatively simple to prepare and characterize clean surfaces.As an example, thin gold film specimens, textured with the [111] normal to the film, were made in a standard vacuum evaporator and floated onto a gold grid. The transfer chamber was then baked-out at 250°C for about 12 hours to achieve UHV conditions. Figure 1 shows an image taken from the gold film after bakeout.

Microstructures of Si(111) on Ion Sputtering and Electron Annealing

1991 ◽  
Vol 236 ◽  
Author(s):  
R. Al ◽  
T. S. Savage ◽  
P. Xu ◽  
J. P. Zhang ◽  
L. D. Marks
Keyword(s):  
Sample Preparation ◽  
Surface Science ◽  
Microstructure Evolution ◽  
Preparation Method ◽  
Ion Beam ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Ion Beam Sputtering ◽  
Transmission Electron ◽  
Beam Sputtering

AbstractThe microstructure evolution during preparation of thin Si(111) samples for surface sensitive imaging has been studied using ultra-high vacuum (UHV) transmission electron microscopy (TEM). The effects of ion beam sputtering and electron annealing have been investigated. A unique and routine sample preparation method for surface sensitive TEM imaging that combines TEM sample preparations with surface science sample preparation was developed. The microstructure evolution during the sample preparation process was studied in detail.

Characterizations of Co/Al2O3/Co/NiFe multilayers elaborated by ultra-high vacuum ion beam sputtering

2005 ◽  
Vol 25 (5-8) ◽  
pp. 752-755 ◽  
Author(s):  
E.H. Oubensaid ◽  
C. Maunoury ◽  
T. Devolder ◽  
N. Marsot ◽  
C. Schwebel
Keyword(s):  
Ion Beam ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Ion Beam Sputtering ◽  
Beam Sputtering

Deposition of Conductive Titanium Sub-Oxide Films by Reactive Ion-Beam Sputtering

1994 ◽  
Vol 337 ◽  
Author(s):  
K.G. Grigorov ◽  
A.H. Benhocine ◽  
D. Bouchier ◽  
F. Meyer
Keyword(s):  
Ion Beam ◽  
High Vacuum ◽  
Lattice Parameter ◽  
Ultra High Vacuum ◽  
Titanium Monoxide ◽  
Ion Beam Sputtering ◽  
Beam Sputtering ◽  
Cubic Structure ◽  
Electron Spectrometry

ABSTRACTTitanium monoxide films were deposited on silicon by reactive ion beam sputtering from a Ti target. The film composition was measured in situ by Auger electron spectrometry. It was observed that oxygen content in the deposit does not depend on the substrate temperature, up to 600 °C. Synthesized TiO films had a cubic structure with a lattice parameter of 4.17 Å, which confirmed that the O/Ti concentration ratio in the films was very close to the expected value. The films were found to be conductive, with a resistivity value equal to 170 μΩ cm. They had a yellowish metallic appearence and a very smooth surface. Sequences of annealings at increasing temperatures were performed under ultra-high-vacuum. No AES signal from silicon was observed up to a temperature of 700 °C.

scholarly journals Formation of High Purity Films by Negative Ion Beam Sputtering Using an Ultra-high Vacuum Self-Sputtering Method

2000 ◽  
Vol 41 (1) ◽  
pp. 31-33
Author(s):  
Akiyoshi Chayahara ◽  
Atsushi Kinomura ◽  
Nobuteru Tsubouchi ◽  
Claire Heck ◽  
Yuji Horino
Keyword(s):  
High Purity ◽  
Ion Beam ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Negative Ion ◽  
Ion Beam Sputtering ◽  
Beam Sputtering

scholarly journals Study of XUV beam splitter flatness for use on a Michelson interferometer

2004 ◽  
Vol 22 (3) ◽  
pp. 279-284 ◽  
Author(s):  
ANNE-SOPHIE MORLENS ◽  
PHILIPPE ZEITOUN ◽  
LAURENT VANBOSTAL ◽  
PASCAL MERCERE ◽  
GRÉGORY FAIVRE ◽  
...  
Keyword(s):  
Beam Splitter ◽  
Ion Beam ◽  
Michelson Interferometer ◽  
Fourier Transform Spectrometer ◽  
Ion Beam Sputtering ◽  
X Ray ◽  
Interference Fringes ◽  
Beam Sputtering ◽  
20 Nm ◽  
Better Than

A XUV Michelson interferometer has been developed by LIXAM/CEA/LCFIO and has been tested as a Fourier-transform spectrometer for measurement of X-ray laser line shape. The observed strong deformation of the interference fringes limited the interest of such an interferometer for plasma probing. Because the fringe deformation was coming from a distortion of the beam splitter (5 × 5 mm2open aperture, about 150 nm thick), several parameters of the multilayer deposition used for the beam splitter fabrication have been recently optimized. The flatness has been improved from 80 nm rms obtained by using the ion beam sputtering technique, to 20 nm rms by using the magnetron sputtering technique. Over 3 × 3 mm2, the beam splitter has a flatness better than 4 nm rms.

Chemically Clean Planar Interface Synthesis: Substrate Surface and Interface Cross Section Microscopy

1997 ◽  
Vol 3 (S2) ◽  
pp. 635-636
Author(s):  
J. Xu ◽  
M.J Cox ◽  
M.J. Kim
Keyword(s):  
Ion Beam ◽  
Substrate Surface ◽  
High Vacuum ◽  
Auger Spectroscopy ◽  
Planar Interface ◽  
Ultra High Vacuum ◽  
Atomic Scale ◽  
Boundary Structure ◽  
Surface And Interface ◽  
Interface Synthesis

An ultra high vacuum (UHV) planar interface unit has been constructed to study the effect of interface/boundary structure and chemistry on properties. We report here initial observations of substrate morphology and chemistry prior to bonding and resulting interface morphology obtained using austenitic stainless steel.To synthesize chemically clean planar interfaces by diffusion bonding, the substrate must be macroscopically and microscopically flat and chemically clean. Macro-flatness, necessary for bonding to occur over large areas, was ensured by conventional mechanical polishing and lapping. Substrate surfaces were cleaned by a broad (3cm) 500 eV ion beam (Ar or Xe) at 15° incidence. The resulting changes in substrate near-atomic-scale roughness and chemistry were analyzed using Auger spectroscopy (AES) and Atomic Force Microscopy (AFM). Before ion beam cleaning, the sub-strates exhibited high oxygen and carbon contamination (Fig la). Both Xe and Ar ion cleaning reduced these values; the result for 5 minutes Ar cleaning is shown in Fig lb.

UHV-TEM imaging and diffraction study of Cu-Au on Si(111)

1992 ◽  
Vol 50 (1) ◽  
pp. 328-329
Author(s):  
P. Xu ◽  
L. D. Marks
Keyword(s):  
Surface Science ◽  
Ion Beam ◽  
High Vacuum ◽  
Sample Surface ◽  
Ultra High Vacuum ◽  
Electron Gun ◽  
Stable Operation ◽  
Thin Sample ◽  
Specimen Holder ◽  
Transmission Electron

It has been demonstrated that ultra-high vacuum transmission electron microscopy is a powerful technique in solving surface atomic structures. During some recent work while we were testing surface imaging modes using the Si(111)-7×7 surface, we accidentally contaminated the surface by sputtering copper and some gold from the specimen holder onto the silicon. This paper presents the results of transmission electron diffraction and imaging studies of this surface.Experiments were performed in a Hitachi UHV H-9000 300 keV electron microscope with a stable operation pressure of 1x10-10 Torr. Attached to the microscope is a UHV surface science chamber for in situ sample preparation. A thin sample of silicon (111) (P doped to 80 ohm-cm) was mechanically polished, dimpled, and ion-beam thinned before being transferred into the surface science chamber. The sample was then ion beam sputter cleaned using 3-4 Kv argon ions and annealed to about 600°C using an electron gun (4-5 Kv, 2-3 Ma). Later tests indicated that the ion gun was not centered around the 3 mm disk and a part of the sample surface was covered by the sputtered materials from the sample holder. EDX results from a Hitachi HF-2000 analytical microscope showed that the deposited layer consisted of about 70% Cu and 30% Au.

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