Characterizations of Co/Al2O3/Co/NiFe multilayers elaborated by ultra-high vacuum ion beam sputtering

2005 ◽  
Vol 25 (5-8) ◽  
pp. 752-755 ◽  
Author(s):  
E.H. Oubensaid ◽  
C. Maunoury ◽  
T. Devolder ◽  
N. Marsot ◽  
C. Schwebel
Keyword(s):  
Ion Beam ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Ion Beam Sputtering ◽  
Beam Sputtering

Deposition of Conductive Titanium Sub-Oxide Films by Reactive Ion-Beam Sputtering

1994 ◽  
Vol 337 ◽  
Author(s):  
K.G. Grigorov ◽  
A.H. Benhocine ◽  
D. Bouchier ◽  
F. Meyer
Keyword(s):  
Ion Beam ◽  
High Vacuum ◽  
Lattice Parameter ◽  
Ultra High Vacuum ◽  
Titanium Monoxide ◽  
Ion Beam Sputtering ◽  
Beam Sputtering ◽  
Cubic Structure ◽  
Electron Spectrometry

ABSTRACTTitanium monoxide films were deposited on silicon by reactive ion beam sputtering from a Ti target. The film composition was measured in situ by Auger electron spectrometry. It was observed that oxygen content in the deposit does not depend on the substrate temperature, up to 600 °C. Synthesized TiO films had a cubic structure with a lattice parameter of 4.17 Å, which confirmed that the O/Ti concentration ratio in the films was very close to the expected value. The films were found to be conductive, with a resistivity value equal to 170 μΩ cm. They had a yellowish metallic appearence and a very smooth surface. Sequences of annealings at increasing temperatures were performed under ultra-high-vacuum. No AES signal from silicon was observed up to a temperature of 700 °C.

scholarly journals Formation of High Purity Films by Negative Ion Beam Sputtering Using an Ultra-high Vacuum Self-Sputtering Method

2000 ◽  
Vol 41 (1) ◽  
pp. 31-33
Author(s):  
Akiyoshi Chayahara ◽  
Atsushi Kinomura ◽  
Nobuteru Tsubouchi ◽  
Claire Heck ◽  
Yuji Horino
Keyword(s):  
High Purity ◽  
Ion Beam ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Negative Ion ◽  
Ion Beam Sputtering ◽  
Beam Sputtering

UHV microscopy of surfaces: Recent results

1989 ◽  
Vol 47 ◽  
pp. 550-551
Author(s):  
J.E. Bonevich ◽  
J.P. Zhang ◽  
M. Jacoby ◽  
R. Ai ◽  
D. Dunn ◽  
...  
Keyword(s):  
Surface Science ◽  
Gold Film ◽  
Ion Beam ◽  
High Vacuum ◽  
Auger Spectroscopy ◽  
Ultra High Vacuum ◽  
Ion Beam Sputtering ◽  
Optical Heating ◽  
Beam Sputtering ◽  
Better Than

In order to examine surfaces of materials, a prerequisite is a microscope which combines ultra-high vacuum (UHV) with surface science cleaning and characterization techniques such as ion beam sputtering, annealing, and Auger spectroscopy. In order to achieve this, we have mounted onto the side of a UHV-H9000 microscope LEED/Auger, an ion gun, and optical heating; in the transfer chamber specimens can be cleaned at a base pressure of 2×10-10 torr and transferred into the microscope which operates at pressures better than 2×10-10 torr. With this marriage, it is relatively simple to prepare and characterize clean surfaces.As an example, thin gold film specimens, textured with the [111] normal to the film, were made in a standard vacuum evaporator and floated onto a gold grid. The transfer chamber was then baked-out at 250°C for about 12 hours to achieve UHV conditions. Figure 1 shows an image taken from the gold film after bakeout.

Microstructures of Si(111) on Ion Sputtering and Electron Annealing

1991 ◽  
Vol 236 ◽  
Author(s):  
R. Al ◽  
T. S. Savage ◽  
P. Xu ◽  
J. P. Zhang ◽  
L. D. Marks
Keyword(s):  
Sample Preparation ◽  
Surface Science ◽  
Microstructure Evolution ◽  
Preparation Method ◽  
Ion Beam ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Ion Beam Sputtering ◽  
Transmission Electron ◽  
Beam Sputtering

AbstractThe microstructure evolution during preparation of thin Si(111) samples for surface sensitive imaging has been studied using ultra-high vacuum (UHV) transmission electron microscopy (TEM). The effects of ion beam sputtering and electron annealing have been investigated. A unique and routine sample preparation method for surface sensitive TEM imaging that combines TEM sample preparations with surface science sample preparation was developed. The microstructure evolution during the sample preparation process was studied in detail.

Magnetic properties of Co/Al2O3/Co junctions deposited by ultra high vacuum ion beam sputtering

2004 ◽  
Vol 109 (1-3) ◽  
pp. 213-216 ◽  
Author(s):  
C Maunoury ◽  
N Marsot ◽  
T Devolder ◽  
C Schwebel
Keyword(s):  
Magnetic Properties ◽  
Ion Beam ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Ion Beam Sputtering ◽  
Beam Sputtering

Interface Reactions and Electrical Properties of Ta/4H-SiC Contacts

2007 ◽  
Vol 556-557 ◽  
pp. 713-716 ◽  
Author(s):  
Yu Cao ◽  
S. Alfonso Pérez-García ◽  
Lars Nyborg
Keyword(s):  
Electrical Properties ◽  
Photoelectron Spectroscopy ◽  
Ion Beam ◽  
High Vacuum ◽  
Ion Beam Sputtering ◽  
X Ray Diffraction ◽  
X Ray ◽  
Interface Reactions ◽  
Beam Sputtering ◽  
Sic Wafer

This study deals with the interfacial reactions and electrical properties of Ta/4H-SiC contacts. Tantalum thin films (~100 nm) were deposited onto SiC wafer at room temperature by argon ion beam sputtering. The samples were then heated in high vacuum at 650°C, 800°C or 950°C for 30 min. X-ray photoelectron spectroscopy (XPS), glancing angle X-ray diffraction (XRD), Auger electron spectroscopy (AES) and current-voltage (I-V) technique were used for characterising the samples. Ohmic contact is formed in the studied samples after annealing at or above 800°C even though considerable amount of metallic Ta still exists. The reaction zone possesses a layered structure of Ta2C/Ta2C+Ta5Si3/SiC. High enough temperature is needed to provide for sufficient interface change to tailor the contact properties.

scholarly journals AES Studies of Heteroepitaxial SiC Films Deposited on Si and on Sapphire Substrates by MOCVD

2013 ◽  
Vol 15 (3) ◽  
pp. 259
Author(s):  
R. Beisenov ◽  
R. Ebrahim ◽  
A. Zommorodian ◽  
Z.A. Mansurov ◽  
S.Zh. Tokmoldin ◽  
...  
Keyword(s):  
Depth Profile ◽  
Ion Beam ◽  
High Vacuum ◽  
Stoichiometric Composition ◽  
Surface Cleaning ◽  
Ion Beam Sputtering ◽  
X Ray Diffraction ◽  
Beam Sputtering ◽  
Auger Spectra ◽  
Sic Films

<p>Auger electron spectroscopy (AES) has been used to investigate the chemical composition of the heteroepitaxial silicon carbide films grown on Si (100) and sapphire (0001) substrates at 900 °C by the MOCVD technique using DEMS precursor. Auger spectra were obtained from the surface and as a function of depth of 2 micron thick SiC films. AES measurements were performed under very high vacuum 10<sup>-9</sup> Torr conditions. Surface cleaning and depth profile studies were carried out by using Ar<sup>+</sup> ion beam sputtering. Auger spectra of the surface indicate Si LVV, C KLL and O KLL peaks. The Si LVV signals on the as prepared’ surfaces for both substrates indicated that the silicon was in the oxide state, which was removed after 15 min Ar+ ion cleaning. Depth profile studies showed, that after 20 min of ion cleaning the SiC films possess near stoichiometric composition. Moreover, the C KLL signal on the ion cleaned films showed the carbon in the carbide state. X-ray diffraction analysis of the SiC films on the sapphire (0001) and Si(100) substrates has shown a high intensity single peaks at 35.7°, which indicates the presence of SiC at orientation (111).</p>

(100) Epitaxial and (111) Polycrystalline Spin Valve Heterostructures on si (100): Magnetotransport and the Importance of Interface Mixing in Ion Beam Sputtering

1995 ◽  
Vol 384 ◽  
Author(s):  
Hyun S. Joo ◽  
Imran Hashim ◽  
Harry A. Atwater ◽  
Thomas J. Watson
Keyword(s):  
Ion Beam ◽  
High Vacuum ◽  
Spin Valve ◽  
Film Surface ◽  
High Energy ◽  
Spin Valves ◽  
Ion Beam Sputtering ◽  
Beam Sputtering ◽  
Interface Mixing ◽  
Cu Interlayer

ABSTRACTWe have investigated magnetoresistance properties of (100) epitaxial, (11) textured and polycrystalline spin valve heterostructures of the form Ni80Fe20/Cu/NiNi80Fe20/Fe50Mn50 on (100) Si substrates by ultra high vacuum (UHV) ion beam sputtering at room temperature. Magnetoresistance was measured as a function of Cu interlayer thickness (ti) with 10 Å ≤ti ≤ 100 Å and the maximum was found at 20 Å in the case of (100) epitaxial spin valves. Highly (11) textured spin valves with heterostructure configurations similar to the (100) spin valves were found to have a slightly lower magnetoresistance than the (100) heterostructures, but the functional dependence of the magnetoresistance on ti was very similar.Interface mixing during the sputtering process by energetic neutral bombardment was found to significantly affect the magnetoresistance. Samples were made under various sputtering conditions (gas pressure, ion beam energy, target and substrate configuration) that could enhance or suppress high energy neutral bombardment of the growing film surface. Samples made under the conditions that suppressed neutral bombardment showed higher magnetoresistance and more abrupt interfaces as confirmed by small angle X-ray diffraction analysis of interface mixing by energetic neutral bombardment during sputter deposition.

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