Microstructures of Si(111) on Ion Sputtering and Electron Annealing

1991 ◽  
Vol 236 ◽  
Author(s):  
R. Al ◽  
T. S. Savage ◽  
P. Xu ◽  
J. P. Zhang ◽  
L. D. Marks
Keyword(s):  
Sample Preparation ◽  
Surface Science ◽  
Microstructure Evolution ◽  
Preparation Method ◽  
Ion Beam ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Ion Beam Sputtering ◽  
Transmission Electron ◽  
Beam Sputtering

AbstractThe microstructure evolution during preparation of thin Si(111) samples for surface sensitive imaging has been studied using ultra-high vacuum (UHV) transmission electron microscopy (TEM). The effects of ion beam sputtering and electron annealing have been investigated. A unique and routine sample preparation method for surface sensitive TEM imaging that combines TEM sample preparations with surface science sample preparation was developed. The microstructure evolution during the sample preparation process was studied in detail.

UHV microscopy of surfaces: Recent results

1989 ◽  
Vol 47 ◽  
pp. 550-551
Author(s):  
J.E. Bonevich ◽  
J.P. Zhang ◽  
M. Jacoby ◽  
R. Ai ◽  
D. Dunn ◽  
...  
Keyword(s):  
Surface Science ◽  
Gold Film ◽  
Ion Beam ◽  
High Vacuum ◽  
Auger Spectroscopy ◽  
Ultra High Vacuum ◽  
Ion Beam Sputtering ◽  
Optical Heating ◽  
Beam Sputtering ◽  
Better Than

In order to examine surfaces of materials, a prerequisite is a microscope which combines ultra-high vacuum (UHV) with surface science cleaning and characterization techniques such as ion beam sputtering, annealing, and Auger spectroscopy. In order to achieve this, we have mounted onto the side of a UHV-H9000 microscope LEED/Auger, an ion gun, and optical heating; in the transfer chamber specimens can be cleaned at a base pressure of 2×10-10 torr and transferred into the microscope which operates at pressures better than 2×10-10 torr. With this marriage, it is relatively simple to prepare and characterize clean surfaces.As an example, thin gold film specimens, textured with the [111] normal to the film, were made in a standard vacuum evaporator and floated onto a gold grid. The transfer chamber was then baked-out at 250°C for about 12 hours to achieve UHV conditions. Figure 1 shows an image taken from the gold film after bakeout.

Characterizations of Co/Al2O3/Co/NiFe multilayers elaborated by ultra-high vacuum ion beam sputtering

2005 ◽  
Vol 25 (5-8) ◽  
pp. 752-755 ◽  
Author(s):  
E.H. Oubensaid ◽  
C. Maunoury ◽  
T. Devolder ◽  
N. Marsot ◽  
C. Schwebel
Keyword(s):  
Ion Beam ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Ion Beam Sputtering ◽  
Beam Sputtering

Deposition of Conductive Titanium Sub-Oxide Films by Reactive Ion-Beam Sputtering

1994 ◽  
Vol 337 ◽  
Author(s):  
K.G. Grigorov ◽  
A.H. Benhocine ◽  
D. Bouchier ◽  
F. Meyer
Keyword(s):  
Ion Beam ◽  
High Vacuum ◽  
Lattice Parameter ◽  
Ultra High Vacuum ◽  
Titanium Monoxide ◽  
Ion Beam Sputtering ◽  
Beam Sputtering ◽  
Cubic Structure ◽  
Electron Spectrometry

ABSTRACTTitanium monoxide films were deposited on silicon by reactive ion beam sputtering from a Ti target. The film composition was measured in situ by Auger electron spectrometry. It was observed that oxygen content in the deposit does not depend on the substrate temperature, up to 600 °C. Synthesized TiO films had a cubic structure with a lattice parameter of 4.17 Å, which confirmed that the O/Ti concentration ratio in the films was very close to the expected value. The films were found to be conductive, with a resistivity value equal to 170 μΩ cm. They had a yellowish metallic appearence and a very smooth surface. Sequences of annealings at increasing temperatures were performed under ultra-high-vacuum. No AES signal from silicon was observed up to a temperature of 700 °C.

scholarly journals Formation of High Purity Films by Negative Ion Beam Sputtering Using an Ultra-high Vacuum Self-Sputtering Method

2000 ◽  
Vol 41 (1) ◽  
pp. 31-33
Author(s):  
Akiyoshi Chayahara ◽  
Atsushi Kinomura ◽  
Nobuteru Tsubouchi ◽  
Claire Heck ◽  
Yuji Horino
Keyword(s):  
High Purity ◽  
Ion Beam ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Negative Ion ◽  
Ion Beam Sputtering ◽  
Beam Sputtering

UHV-TEM imaging and diffraction study of Cu-Au on Si(111)

1992 ◽  
Vol 50 (1) ◽  
pp. 328-329
Author(s):  
P. Xu ◽  
L. D. Marks
Keyword(s):  
Surface Science ◽  
Ion Beam ◽  
High Vacuum ◽  
Sample Surface ◽  
Ultra High Vacuum ◽  
Electron Gun ◽  
Stable Operation ◽  
Thin Sample ◽  
Specimen Holder ◽  
Transmission Electron

It has been demonstrated that ultra-high vacuum transmission electron microscopy is a powerful technique in solving surface atomic structures. During some recent work while we were testing surface imaging modes using the Si(111)-7×7 surface, we accidentally contaminated the surface by sputtering copper and some gold from the specimen holder onto the silicon. This paper presents the results of transmission electron diffraction and imaging studies of this surface.Experiments were performed in a Hitachi UHV H-9000 300 keV electron microscope with a stable operation pressure of 1x10-10 Torr. Attached to the microscope is a UHV surface science chamber for in situ sample preparation. A thin sample of silicon (111) (P doped to 80 ohm-cm) was mechanically polished, dimpled, and ion-beam thinned before being transferred into the surface science chamber. The sample was then ion beam sputter cleaned using 3-4 Kv argon ions and annealed to about 600°C using an electron gun (4-5 Kv, 2-3 Ma). Later tests indicated that the ion gun was not centered around the 3 mm disk and a part of the sample surface was covered by the sputtered materials from the sample holder. EDX results from a Hitachi HF-2000 analytical microscope showed that the deposited layer consisted of about 70% Cu and 30% Au.

TEM Study of Co/Pd and Co/Au Multilayers

1993 ◽  
Vol 51 ◽  
pp. 1036-1037
Author(s):  
A.E.M. De Veirman ◽  
F.J.G. Hakkens ◽  
W.M.J. Coene ◽  
F.J.A. den Broeder
Keyword(s):  
Magnetic Anisotropy ◽  
Ion Beam ◽  
Perpendicular Magnetic Anisotropy ◽  
Optical Recording ◽  
Magnetic Multilayer ◽  
Ion Beam Sputtering ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Beam Sputtering ◽  
Substrate Temperatures

There is currently great interest in magnetic multilayer (ML) thin films (see e.g.), because they display some interesting magnetic properties. Co/Pd and Co/Au ML systems exhibit perpendicular magnetic anisotropy below certain Co layer thicknesses, which makes them candidates for applications in the field of magneto-optical recording. It has been found that the magnetic anisotropy of a particular system strongly depends on the preparation method (vapour deposition, sputtering, ion beam sputtering) as well as on the substrate, underlayer and deposition temperature. In order to get a better understanding of the correlation between microstructure and properties a thorough cross-sectional transmission electron microscopy (XTEM) study of vapour deposited Co/Pd and Co/Au (111) MLs was undertaken (for more detailed results see ref.).The Co/Pd films (with fixed Pd thickness of 2.2 nm) were deposited on mica substrates at substrate temperatures Ts of 20°C and 200°C, after prior deposition of a 100 nm Pd underlayer at 450°C.

Modifications of a JEOL 2000EX TEM for insSitu surface studies

1993 ◽  
Vol 51 ◽  
pp. 640-641
Author(s):  
Michael T. Marshall ◽  
Xianghong Tong ◽  
J. Murray Gibson
Keyword(s):  
Electron Diffraction ◽  
Surface Science ◽  
Film Growth ◽  
High Vacuum ◽  
High Energy ◽  
Energy Electron ◽  
Ultra High Vacuum ◽  
Transmission Electron ◽  
Fundamental Insight

We have modified a JEOL 2000EX Transmission Electron Microscope (TEM) to allow in-situ ultra-high vacuum (UHV) surface science experiments as well as transmission electron diffraction and imaging. Our goal is to support research in the areas of in-situ film growth, oxidation, and etching on semiconducter surfaces and, hence, gain fundamental insight of the structural components involved with these processes. The large volume chamber needed for such experiments limits the resolution to about 30 Å, primarily due to electron optics. Figure 1 shows the standard JEOL 2000EX TEM. The UHV chamber in figure 2 replaces the specimen area of the TEM, as shown in figure 3. The chamber is outfitted with Low Energy Electron Diffraction (LEED), Auger Electron Spectroscopy (AES), Residual Gas Analyzer (RGA), gas dosing, and evaporation sources. Reflection Electron Microscopy (REM) is also possible. This instrument is referred to as SHEBA (Surface High-energy Electron Beam Apparatus).The UHV chamber measures 800 mm in diameter and 400 mm in height. JEOL provided adapter flanges for the column.

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