scholarly journals Shared Research Equipment at OAK Ridge National Laboratory

1998 ◽  
Vol 4 (S2) ◽  
pp. 470-471
Author(s):  
N. D. Evans ◽  
E. A. Kenik ◽  
M. K. Miller
Keyword(s):  
Semiconductor Device ◽  
National Laboratory ◽  
Atomic Scale ◽  
Fiscal Year ◽  
Probe Field ◽  
Oak Ridge ◽  
Wide Range ◽  
Oak Ridge National Laboratory ◽  
Electron Microscopes ◽  
Research Equipment

The Shared Research Equipment (SHaRE) User Facility and Program at Oak Ridge National Laboratory (ORNL) provides microanalytical facilities for studies within the materials sciences. Available instrumentation includes advanced analytical electron microscopes, atom probe field ion microscopes, and nanoindentation facilities. Through SHaRE, researchers from U.S. universities, industries, and government laboratories may collaborate with Facility scientists to perform research not possible at their home institutions. International collaborations are also possible. Most SHaRE projects seek correlations at the microscopic or atomic scale between structure and properties in a wide range of metallic, ceramic, and other structural materials. Typical research projects include studies of magnetic materials, advanced alloys, catalysts, semiconductor device materials, high Tc superconductors, and surface-modified polymers. Projects usually involve one or more external researchers visiting the SHaRE Facility for up to three weeks during the fiscal year (October 1 - September 30). Project approval is based upon the scientific excellence and relevance of proposed collaborative research.

scholarly journals Fusion Materials Research at Oak Ridge National Laboratory in Fiscal Year 2019

2020 ◽  
Author(s):  
Bill Wiffen ◽  
Yutai Kato ◽  
Stephanie Melton
Keyword(s):  
National Laboratory ◽  
Fiscal Year ◽  
Oak Ridge ◽  
Fusion Materials ◽  
Oak Ridge National Laboratory ◽  
Materials Research

Z-Contrast Imaging of Grain Boundaries in Semiconductors

1996 ◽  
Vol 54 ◽  
pp. 332-333
Author(s):  
M. F. Chisholm ◽  
S. J. Pennycook
Keyword(s):  
Grain Boundaries ◽  
Chemical Potential ◽  
National Laboratory ◽  
Atomic Scale ◽  
Structural Defects ◽  
Specimen Thickness ◽  
Contrast Imaging ◽  
Oak Ridge ◽  
Wide Range ◽  
Annular Detector

Interest in grain boundaries in semiconductors is linked to the application of polycrystalline semiconductors as photovoltaic and interconnect materials. In real devices such as solar cells and MOS structures as well as future devices such as flat-panel displays, the intergranular regions of the polycrystalline solid have a significant effect on the flow of electronic current. These grain boundary barriers exist because the chemical potential of the boundary atoms are shifted from the bulk value by the change in local symmetry. The chemical potential is also changed by impurities, other structural defects, and other phases in the boundary. The lack of knowledge on the atomic structure of grain boundaries is, at present, the greatest barrier to advancements in the understanding of the electrical properties of these defects.The advances of the last few years have provided the tools with which to probe these interfaces at the true atomic scale. One such tool is the high-resolution scanning transmission electron microscope installed at Oak Ridge National Laboratory (VG Microscopes HB603) that can form a 1.27Å electron probe. Images are formed by scanning the probe across a thin sample and using an annular detector to collect electrons scattered to high angles. Because the annular detector collects electrons scattered over a wide range of angles, phase correlations and dynamical diffraction effects are averaged by this annular integration. Thus, an image with incoherent characteristics is produced and retained to relatively large specimen thickness.

scholarly journals Fusion Materials Research at Oak Ridge National Laboratory in Fiscal Year 2017

2017 ◽  
Author(s):  
Yutai Katoh ◽  
Frederick W. Wiffen ◽  
Stephanie G. Melton
Keyword(s):  
National Laboratory ◽  
Fiscal Year ◽  
Oak Ridge ◽  
Fusion Materials ◽  
Oak Ridge National Laboratory ◽  
Materials Research

Early Results from an Aberration-Corrected JEOL 2200FS STEM/TEM at Oak Ridge National Laboratory

2006 ◽  
Vol 12 (6) ◽  
pp. 483-491 ◽  
Author(s):  
Douglas A. Blom ◽  
Lawrence F. Allard ◽  
Satoshi Mishina ◽  
Michael A. O'Keefe
Keyword(s):  
National Laboratory ◽  
Oak Ridge ◽  
Construction Methods ◽  
Early Results ◽  
Oak Ridge National Laboratory ◽  
Electron Microscopes ◽  
And Performance ◽  
Aberration Corrected ◽  
Suitable Location

The resolution-limiting aberrations of round electromagnetic lenses can now be successfully overcome via the use of multipole element “aberration correctors.” The installation and performance of a hexapole-based corrector (CEOS GmbH) integrated on the probe-forming side of a JEOL 2200FS FEG STEM/TEM is described. For the resolution of the microscope not to be severely compromised by its environment, a new, specially designed building at Oak Ridge National Laboratory has been built. The Advanced Microscopy Laboratory was designed with the goal of providing a suitable location for aberration-corrected electron microscopes. Construction methods and performance of the building are discussed in the context of the performance of the microscope. Initial performance of the microscope on relevant specimens and modifications made to eliminate resolution-limiting conditions are also discussed.

scholarly journals Fusion Materials Research at Oak Ridge National Laboratory in Fiscal Year 2016

2016 ◽  
Author(s):  
Frederick W Wiffen ◽  
Yutai Katoh ◽  
Stephanie G. Melton
Keyword(s):  
National Laboratory ◽  
Fiscal Year ◽  
Oak Ridge ◽  
Fusion Materials ◽  
Oak Ridge National Laboratory ◽  
Materials Research
Sign in / Sign up

Export Citation Format

Share Document