scholarly journals Real-space Measurements of Bonding Charge Density in Aberration-corrected High Resolution Electron Microscopy

2009 ◽  
Vol 15 (S2) ◽  
pp. 1478-1479
Author(s):  
J Ciston ◽  
SJ Haigh ◽  
JS Kim ◽  
AI Kirkland ◽  
LD Marks
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Charge Density ◽  
High Resolution Electron Microscopy ◽  
Real Space ◽  
Resolution Electron ◽  
Aberration Corrected

Extended abstract of a paper presented at Microscopy and Microanalysis 2009 in Richmond, Virginia, USA, July 26 – July 30, 2009

Strain measurements in s-Si/SiGe nanostructures by quantitative high-resolution electron microscopy

2007 ◽  
Vol 1026 ◽  
Author(s):  
Florian Hüe ◽  
Martin Hÿtch ◽  
Hugo Bender ◽  
Jean-Michel Hartmann ◽  
Alain Claverie
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Layer Thickness ◽  
High Resolution Electron Microscopy ◽  
Strained Si ◽  
Nanoelectronic Devices ◽  
Transmission Electron ◽  
Resolution Electron ◽  
Channel Region ◽  
Aberration Corrected

AbstractWe have studied strained Si layers grown on Si1-xGex virtual substrate (VS) by high-resolution transmission electron microscopy (HRTEM). Aberration-corrected HRTEM coupled with geometric phase analysis (GPA) provides precise measurements of strain. Different parameters are investigated: the VS composition (x=20, 30, 40 and 50%) and the s-Si layer thickness. Finite element method simulations confirm our measurements. Measurements and simulations lead to the conclusion that the strain state of the deposited layer is independent of the layer thickness. We apply the technique to measuring strains in the channel region of a p-MOSFET and show that the technique is a promising metrological tool for nanoelectronic devices.

Sign in / Sign up

Export Citation Format

Share Document