scholarly journals Performance Improvements of Local Electrodes from In-situ Plasma Cleaning

2009 ◽  
Vol 15 (S2) ◽  
pp. 286-287 ◽  
Author(s):  
R Ulfig ◽  
S Gerstl ◽  
TJ Prosa

Extended abstract of a paper presented at Microscopy and Microanalysis 2009 in Richmond, Virginia, USA, July 26 – July 30, 2009

1990 ◽  
Vol 202 ◽  
Author(s):  
Tri-Rung Yew ◽  
Rafael Reif

ABSTRACTThis paper investigates the defect formation at the epi/substrate interface and epitaxial layers due to an improper in–situ Ar or Ar/H2 plasma cleaning at 500–800 °C Deposition process was carried out immediately after the in–situ cleaning process by ultralow pressure chemical vapor deposition process (ULPCVD) from SiH4/H2. Characteristics of the defects and their relationship with damage or impurity contaminations at the interface are presented. Finally, an optimum cleaning condition which ensures high quality epitaxial growth is addressed.


2015 ◽  
Vol 18 (02) ◽  
pp. 158-170 ◽  
Author(s):  
Anna Nissen ◽  
Zhouyuan Zhu ◽  
Anthony Kovscek ◽  
Louis Castanier ◽  
Margot Gerritsen

Summary We demonstrate the effectiveness of a non-Arrhenius kinetic upscaling approach for in-situ-combustion processes, first discussed by Kovscek et al. (2013). Arrhenius reaction terms are replaced with equivalent source terms that are determined by a work flow integrating both laboratory experiments and high-fidelity numerical simulations. The new formulation alleviates both stiffness and grid dependencies of the traditional Arrhenius approach. Consequently, the computational efficiency and robustness of simulations are improved significantly. In this paper, we thoroughly investigate the performance of the non-Arrhenius upscaling method compared with Arrhenius kinetics. We investigate robustness by considering grid effects and sensitivity to heterogeneity. Performance improvements of the new kinetic upscaling approach compared with traditional Arrhenius kinetics are demonstrated through numerical experiments in one and two dimensions for both homogeneous- and heterogeneous-permeability fields.


2018 ◽  
Vol 128 ◽  
pp. 107-112 ◽  
Author(s):  
J. Peng ◽  
A. Litnovsky ◽  
A. Kreter ◽  
Yu. Krasikov ◽  
M. Rasinski ◽  
...  

2019 ◽  
Vol 115 (23) ◽  
pp. 231602
Author(s):  
David A. J. Millar ◽  
Uthayasankaran Peralagu ◽  
Xu Li ◽  
Matthew J. Steer ◽  
Yen-Chun Fu ◽  
...  

1992 ◽  
Vol 21 (2) ◽  
pp. 149-156 ◽  
Author(s):  
S. Li ◽  
G. S. Tompa ◽  
K. Moy ◽  
S. B. West ◽  
C. R. Nelson ◽  
...  

ChemInform ◽  
2010 ◽  
Vol 26 (6) ◽  
pp. no-no
Author(s):  
R. J. CARTER ◽  
T. P. SCHNEIDER ◽  
J. S. MONTGOMERY ◽  
R. J. NEMANICH
Keyword(s):  

1990 ◽  
Vol 202 ◽  
Author(s):  
Euijoon Yoon ◽  
Rafael Reif

ABSTRACTWe report the significant improvement of GaAs crystal quality on Si grown by metal-organic chemical vapor deposition (MOCVD) with an in situ low temperature hydrogen/arsine plasma cleaning of the Si substrate at 450°C and a consequent controlled two-dimensional-like morphology of the low temperature buffer layer at its early stage. The most critical step that determines the interfacial cleanliness and the early stages of the nucleation and thin film formation of heteroepitaxial GaAs on Si in a non-ultrahigh vacuum MOCVD system is the substitution of hydrogen atoms passivating the Si surface after ex situ HF-dip with pas-sivating As atoms. Reduction of in situ cleaning temperature ensures the very slow kinetics of thermal desorption of the hydrogen atoms and re-oxidation of exposed Si surface from the reactor environment, and provides a fully As-passivated Si surface, leading to a 2D-like buffer layer.


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