Imaging Perpendicular Magnetic Domains in Plan-view Using Lorentz Transmission Electron Microscopy

AbstractReactive multilayer thin films that undergo highly exothermic reactions are attractive choices for applications in ignition, propulsion, and joining systems. Ni/Al reactive multilayer thin films were deposited by dc magnetron sputtering with a period of 14 nm. The microstructure of the as-deposited and heat-treated Ni/Al multilayers was studied by transmission electron microscopy (TEM) and scanning transmission electron microscopy (STEM) in plan view and in cross section. The cross-section samples for TEM and STEM were prepared by focused ion beam lift-out technique. TEM analysis indicates that the as-deposited samples were composed of Ni and Al. High-resolution TEM images reveal the presence of NiAl in small localized regions. Microstructural characterization shows that heat treating at 450 and 700°C transforms the Ni/Al multilayered structure into equiaxed NiAl fine grains.

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Structural Investigation of Photoluminescent Porous Si by Transmission Electron Microscopy

MRS Proceedings ◽

10.1557/proc-281-513 ◽

1992 ◽

Vol 281 ◽

Author(s):

S. Shih ◽

K. H. Jung ◽

D. L. Kwong

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

Sample Preparation ◽

Structural Investigation ◽

Amorphous Material ◽

Porous Si ◽

Plan View ◽

Mesh Structure ◽

Transmission Electron ◽

Minimal Damage

ABSTRACTWe have developed a new, minimal damage approach for examination of luminescent porous Si layers (PSLs) by transmission electron microscopy (TEM). In this approach, chemically etched PSLs are fabricated after conventional plan-view TEM sample preparation. A diffraction pattern consisting of a diffuse center spot, characteristic of amorphous material, is primarily observed. However, crystalline, microcrystalline, and amorphous regions could all be observed in selected areas. A crystalline mesh structure could be observed in some of the thin areas near the pinhole. The microcrystallite sizes were 15–150 Å and decreased in size when located further from the pinhole.

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Determination of the 3-D Magnetic Vector Potential using Lorentz Transmission Electron Microscopy

Microscopy and Microanalysis ◽

10.1017/s1431927609094665 ◽

2009 ◽

Vol 15 (S2) ◽

pp. 134-135 ◽

Cited By ~ 1

Author(s):

C Phatak ◽

E Humphrey ◽

M DeGraef ◽

A Petford-Long

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

Vector Potential ◽

Magnetic Vector Potential ◽

Magnetic Vector ◽

Transmission Electron ◽

Lorentz Transmission Electron Microscopy

Extended abstract of a paper presented at Microscopy and Microanalysis 2009 in Richmond, Virginia, USA, July 26 – July 30, 2009

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Direct Deposition Reactions Between Nickel and Silicon Substrates

MRS Proceedings ◽

10.1557/proc-311-335 ◽

1993 ◽

Vol 311 ◽

Author(s):

Lin Zhang ◽

Douglas G. Ivey

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

Silicon Substrates ◽

Silicide Formation ◽

Cross Sectional ◽

Deposition Rates ◽

Plan View ◽

X Ray ◽

Si Substrates ◽

Transmission Electron

ABSTRACTSilicide formation through deposition of Ni onto hot Si substrates has been investigated. Ni was deposited onto <100> oriented Si wafers, which were heated up to 300°C, by e-beam evaporation under a vacuum of <2x10-6 Torr. The deposition rates were varied from 0.1 nm/s to 6 nm/s. The samples were then examined by both cross sectional and plan view transmission electron microscopy (TEM), energy dispersive x-ray spectroscopy and electron diffraction. The experimental results are discussed in terms of a new kinetic model.

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