Plan-View of Few Layer Graphene on 6H-SiC by Transmission Electron Microscopy

Metal-supported few-layer graphene (FLG) was synthesized via microwave-assisted catalytic graphitization owing to the increasing demand for it and its wide applications. In this study, we quickly converted earth-abundant and low-cost bituminous coal to FLG over Fe catalysts at a temperature of 1300 °C. X-ray diffraction, Raman spectroscopy, transmission electron microscopy, and N2 adsorption–desorption experiments were performed to analyze the fabricated metal-supported FLG. The results indicated that the microwave-irradiation temperature at a set holding-time played a critical role in the synthesis of metal-supported FLG. The highest degree of graphitization and a well-developed pore structure were fabricated at 1300 °C using a S10% Fe catalyst for 20 min. High-resolution transmission electron microscopy analysis confirmed that the metal-supported FLG fabricated via microwave-assisted catalytic graphitization consisted of 3–6 layers of graphene nanosheets. In addition, the 2D band at 2700 cm−1 in the Raman spectrum of the fabricated metal-supported FLG samples were observed, which indicated the presence of few-layer graphene structure. Furthermore, a mechanism was proposed for the microwave-assisted catalytic graphitization of bituminous coal. Here, we developed a cost-effective and environmental friendly metal-supported FLG method using a coal-based carbonaceous material.

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Using Few-Layer Graphene Sheets as Ultimate Reference of Quantitative Transmission Electron Microscopy

Graphene Science Handbook ◽

10.1201/b19461-30 ◽

2016 ◽

pp. 359-374

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

Graphene Sheets ◽

Layer Graphene ◽

Transmission Electron ◽

Few Layer Graphene

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Monitoring dynamics of defects and single Fe atoms in N-functionalized few-layer graphene by in situ temperature programmed scanning transmission electron microscopy

Journal of Energy Chemistry ◽

10.1016/j.jechem.2021.05.005 ◽

2021 ◽

Author(s):

Rosa Arrigo ◽

Takeo Sasaki ◽

June Callison ◽

Diego Gianolio ◽

Manfred Erwin Schuster

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

Scanning Transmission Electron Microscopy ◽

Layer Graphene ◽

Scanning Transmission Electron ◽

Transmission Electron ◽

Scanning Transmission ◽

Temperature Programmed ◽

Few Layer Graphene

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TEM Characterization of As-Deposited and Annealed Ni/Al Multilayer Thin Film

Microscopy and Microanalysis ◽

10.1017/s143192761009392x ◽

2010 ◽

Vol 16 (6) ◽

pp. 662-669 ◽

Cited By ~ 8

Author(s):

S. Simões ◽

F. Viana ◽

A.S. Ramos ◽

M.T. Vieira ◽

M.F. Vieira

Keyword(s):

Electron Microscopy ◽

Thin Films ◽

Transmission Electron Microscopy ◽

Cross Section ◽

Ion Beam ◽

Microstructural Characterization ◽

Multilayer Thin Films ◽

Tem Analysis ◽

Plan View ◽

Transmission Electron

AbstractReactive multilayer thin films that undergo highly exothermic reactions are attractive choices for applications in ignition, propulsion, and joining systems. Ni/Al reactive multilayer thin films were deposited by dc magnetron sputtering with a period of 14 nm. The microstructure of the as-deposited and heat-treated Ni/Al multilayers was studied by transmission electron microscopy (TEM) and scanning transmission electron microscopy (STEM) in plan view and in cross section. The cross-section samples for TEM and STEM were prepared by focused ion beam lift-out technique. TEM analysis indicates that the as-deposited samples were composed of Ni and Al. High-resolution TEM images reveal the presence of NiAl in small localized regions. Microstructural characterization shows that heat treating at 450 and 700°C transforms the Ni/Al multilayered structure into equiaxed NiAl fine grains.

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Structural Investigation of Photoluminescent Porous Si by Transmission Electron Microscopy

MRS Proceedings ◽

10.1557/proc-281-513 ◽

1992 ◽

Vol 281 ◽

Author(s):

S. Shih ◽

K. H. Jung ◽

D. L. Kwong

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

Sample Preparation ◽

Structural Investigation ◽

Amorphous Material ◽

Porous Si ◽

Plan View ◽

Mesh Structure ◽

Transmission Electron ◽

Minimal Damage

ABSTRACTWe have developed a new, minimal damage approach for examination of luminescent porous Si layers (PSLs) by transmission electron microscopy (TEM). In this approach, chemically etched PSLs are fabricated after conventional plan-view TEM sample preparation. A diffraction pattern consisting of a diffuse center spot, characteristic of amorphous material, is primarily observed. However, crystalline, microcrystalline, and amorphous regions could all be observed in selected areas. A crystalline mesh structure could be observed in some of the thin areas near the pinhole. The microcrystallite sizes were 15–150 Å and decreased in size when located further from the pinhole.

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Direct Deposition Reactions Between Nickel and Silicon Substrates

MRS Proceedings ◽

10.1557/proc-311-335 ◽

1993 ◽

Vol 311 ◽

Author(s):

Lin Zhang ◽

Douglas G. Ivey

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

Silicon Substrates ◽

Silicide Formation ◽

Cross Sectional ◽

Deposition Rates ◽

Plan View ◽

X Ray ◽

Si Substrates ◽

Transmission Electron

ABSTRACTSilicide formation through deposition of Ni onto hot Si substrates has been investigated. Ni was deposited onto <100> oriented Si wafers, which were heated up to 300°C, by e-beam evaporation under a vacuum of <2x10-6 Torr. The deposition rates were varied from 0.1 nm/s to 6 nm/s. The samples were then examined by both cross sectional and plan view transmission electron microscopy (TEM), energy dispersive x-ray spectroscopy and electron diffraction. The experimental results are discussed in terms of a new kinetic model.

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