scholarly journals Measuring Strain Fields surrounding Grain-Boundary Dislocations in Silicon using Scanning Transmission Electron Microscopy

2014 ◽  
Vol 20 (S3) ◽  
pp. 1048-1049
Author(s):  
Martin Couillard
2012 ◽  
Vol 18 (S2) ◽  
pp. 346-347
Author(s):  
C. Wade ◽  
M. McLean ◽  
R. Vinci ◽  
M. Watanabe ◽  
L. Giannuzzi

Extended abstract of a paper presented at Microscopy and Microanalysis 2012 in Phoenix, Arizona, USA, July 29 – August 2, 2012.


2017 ◽  
Vol 23 (2) ◽  
pp. 291-299 ◽  
Author(s):  
Andreas Stoffers ◽  
Juri Barthel ◽  
Christian H. Liebscher ◽  
Baptiste Gault ◽  
Oana Cojocaru-Mirédin ◽  
...  

AbstractIn the course of a thorough investigation of the performance-structure-chemistry interdependency at silicon grain boundaries, we successfully developed a method to systematically correlate aberration-corrected scanning transmission electron microscopy and atom probe tomography. The correlative approach is conducted on individual APT and TEM specimens, with the option to perform both investigations on the same specimen in the future. In the present case of a Σ9 grain boundary, joint mapping of the atomistic details of the grain boundary topology, in conjunction with chemical decoration, enables a deeper understanding of the segregation of impurities observed at such grain boundaries.


Author(s):  
F. Khoury ◽  
L. H. Bolz

The lateral growth habits and non-planar conformations of polyethylene crystals grown from dilute solutions (<0.1% wt./vol.) are known to vary depending on the crystallization temperature.1-3 With the notable exception of a study by Keith2, most previous studies have been limited to crystals grown at <95°C. The trend in the change of the lateral growth habit of the crystals with increasing crystallization temperature (other factors remaining equal, i.e. polymer mol. wt. and concentration, solvent) is illustrated in Fig.l. The lateral growth faces in the lozenge shaped type of crystal (Fig.la) which is formed at lower temperatures are {110}. Crystals formed at higher temperatures exhibit 'truncated' profiles (Figs. lb,c) and are bound laterally by (110) and (200} growth faces. In addition, the shape of the latter crystals is all the more truncated (Fig.lc), and hence all the more elongated parallel to the b-axis, the higher the crystallization temperature.


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