scholarly journals Transmission Electron Backscatter Diffraction (tEBSD) analysis of Au Thin Films

2015 ◽  
Vol 21 (S3) ◽  
pp. 1671-1672
Author(s):  
Eliot Estrine ◽  
Nicholas Seaton ◽  
Prabesh Dulal ◽  
Bethanie Stadler
2009 ◽  
Vol 24 (3) ◽  
pp. 647-651 ◽  
Author(s):  
M. Rester ◽  
C. Motz ◽  
R. Pippan

Electron backscatter diffraction (EBSD) and transmission electron microscopy (TEM) analyses of small indentations in copper single crystals exhibit only slight changes of the crystal orientation in the surroundings of the imprints. Far-reaching dislocations might be the reason for these small misorientation changes. Using EBSD and TEM technique, this work makes an attempt to visualize the far-propagating dislocations by introducing a twin boundary in the vicinity of small indentations. Because dislocations piled up at the twin boundary produce a misorientation gradient, the otherwise far-propagating dislocations can be detected.


MRS Advances ◽  
2016 ◽  
Vol 1 (43) ◽  
pp. 2947-2952
Author(s):  
L. Chen ◽  
Z.-H. Lu ◽  
T.-M. Lu ◽  
I. Bhat ◽  
S.B. Zhang ◽  
...  

ABSTRACTEpitaxial Ge films are useful as a substrate for high-efficiency solar cell applications. It is possible to grow epitaxial Ge films on low cost, cube textured Ni(001) sheets using CaF2(001) as a buffer layer. Transmission electron microscopy (TEM) analysis indicates that the CaF2(001) lattice has a 45o in-plane rotation relative to the Ni(001) lattice. The in-plane epitaxy relationships are CaF2[110]//Ni[100] and CaF2[$\bar 1$10]//Ni[010]. Energy dispersive spectroscopy (EDS) shows a sharp interface between Ge/CaF2 as well as between CaF2/Ni. Electron backscatter diffraction (EBSD) shows that the Ge(001) film has a large grain size (∼50 μm) with small angle grain boundaries (< 8o). The epitaxial Ge thin film has the potential to be used as a substrate to grow high quality III-V and II-VI semiconductors for optoelectronic applications.


2007 ◽  
Vol 13 (S03) ◽  
Author(s):  
A Koblischka-Veneva ◽  
M R Koblischka ◽  
F Mücklich ◽  
U Hartmann ◽  
S Murphy ◽  
...  

2000 ◽  
Vol 6 (S2) ◽  
pp. 940-941
Author(s):  
A.J. Schwartz ◽  
M. Kumar ◽  
P.J. Bedrossian ◽  
W.E. King

Grain boundary network engineering is an emerging field that encompasses the concept that modifications to conventional thermomechanical processing can result in improved properties through the disruption of the random grain boundary network. Various researchers have reported a correlation between the grain boundary character distribution (defined as the fractions of “special” and “random” grain boundaries) and dramatic improvements in properties such as corrosion and stress corrosion cracking, creep, etc. While much early work in the field emphasized property improvements, the opportunity now exists to elucidate the underlying materials science of grain boundary network engineering. Recent investigations at LLNL have coupled automated electron backscatter diffraction (EBSD) with transmission electron microscopy (TEM)5 and atomic force microscopy (AFM) to elucidate these fundamental mechanisms.An example of the coupling of TEM and EBSD is given in Figures 1-3. The EBSD image in Figure 1 reveals “segmentation” of boundaries from special to random and random to special and low angle grain boundaries in some grains, but not others, resulting from the 15% compression of an Inconel 600 polycrystal.


2008 ◽  
Vol 103 (7) ◽  
pp. 07E505 ◽  
Author(s):  
A. Koblischka-Veneva ◽  
M. R. Koblischka ◽  
S. Murphy ◽  
S. K. Arora ◽  
F. Mücklich ◽  
...  

2006 ◽  
Vol 22 (11) ◽  
pp. 1352-1358 ◽  
Author(s):  
C. Trager-Cowan ◽  
F. Sweeney ◽  
A. Winkelmann ◽  
A. J. Wilkinson ◽  
P. W. Trimby ◽  
...  

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