Charge contrast imaging (CCI) is a useful new method for imaging sub-micron features in crystalline materials using the unique gas/ion/electron imaging system of the environmental scanning electron microscope (Griffin, 1997; Doehne, 1998). Crystal growth zoning, microfractures, solution boundaries, and areas of chemical alteration or recrystallization can be imaged in a wide range of materials (Griffin, 2000; Watt, et al. 2000). While not fully understood, charge contrast images reflect differences in the ability of materials to accept, store and discharge deposited electrons from the primary electron beam. These differences are expressed, in turn, as contrasts in secondary electron emission from flat samples (e.g. these contrasts are not related to topography, as is usually the case). Charge contrast appears be related to differences in electronic properties which are often controlled by defect density. CCI is also affected by small-scale physical defects (such as microfractures) which appear to affect the distribution and timing of charge buildup and discharge in the sample (Johansen, et al. 1997).
Fast identification of dislocations in semiconductor materials by electron channeling contrast imaging using a scanning electron microscope
