scholarly journals Energy Dispersive X-ray Spectroscopic Analysis of Al-Cu-Fe Quasicrystalline Thin Film Layer

2018 ◽  
Vol 24 (S1) ◽  
pp. 766-767 ◽  
Author(s):  
Kira Smith ◽  
Andrew Baker ◽  
Jacob Beckey ◽  
Chris Mankos ◽  
Chunfei Li
2019 ◽  
Vol 25 (S2) ◽  
pp. 1798-1799 ◽  
Author(s):  
Andrew Canter ◽  
Kira Smith ◽  
Andrew Baker ◽  
Helen Hampikian ◽  
Chunfei Li

2000 ◽  
Vol 657 ◽  
Author(s):  
Youngman Kim ◽  
Sung-Ho Choo

ABSTRACTThe mechanical properties of thin film materials are known to be different from those of bulk materials, which are generally overlooked in practice. The difference in mechanical properties can be misleading in the estimation of residual stress states in micro-gas sensors with multi-layer structures during manufacturing and in service.In this study the residual stress of each film layer in a micro-gas sensor was measured according to the five difference sets of film stacking structure used for the sensor. The Pt thin film layer was found to have the highest tensile residual stress, which may affect the reliability of the micro-gas sensor. For the Pt layer the changes in residual stress were measured as a function of processing variables and thermal cycling.


2020 ◽  
pp. 182-205
Author(s):  
Glynis de Silveira ◽  
Terrance E. Conners

2019 ◽  
Vol 91 (18) ◽  
pp. 11502-11506 ◽  
Author(s):  
Silvia Fruncillo ◽  
Matteo Trande ◽  
Christopher F. Blanford ◽  
Alessandra Astegno ◽  
Lu Shin Wong

1995 ◽  
Vol 405 ◽  
Author(s):  
W. E. Wallace ◽  
W. L. Wu

AbstractA novel method for determining thin film density by energy dispersive x-ray reflectivity is demonstrated for a polymer-derived spin-on-glass dielectric intended for microelectronics applications. The effects of sample misalignment limit the accuracy of x-ray reflectivity as typically practiced. These effects may be properly accounted for by measuring the critical angle for reflection at many different x-ray wavelengths simultaneously. From this measurement, thin film density can be ascertained with much improved accuracy. The results of the x-ray reflectivity measurement are compared to those derived from MeV ion scattering.


2015 ◽  
Vol 1110 ◽  
pp. 211-217
Author(s):  
Jin Woo Lee ◽  
Yun Hae Kim ◽  
Chang Wook Park

Transparent conductive oxides such as Impurity doped indium oxides, tin oxides, zinc oxide systems are widely used in the field of optoelectronics such as Photo voltaic solar cells, Flat panel displays. Recently in case of the ZnO / Ag Multilayer thin films, doping Ag films on the ZnO layer and ZnO deposited on top of it a way that has been used. However, if thin film applied to the semiconductor, because of lamination of various forms, characteristics of stacking sequence and thin film layer is a need for research. In this study, using DC magnetron sputteirng how the stacking sequence of the film and the transparent operation of various process variables, the possibility of the application to electronic devices was confirmed.


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