Determining Thin Film Density by Energy-Dispersive X-Ray Reflectivity: Application to a Spin-on-Glass Dielectric

1995 ◽  
Vol 405 ◽  
Author(s):  
W. E. Wallace ◽  
W. L. Wu

AbstractA novel method for determining thin film density by energy dispersive x-ray reflectivity is demonstrated for a polymer-derived spin-on-glass dielectric intended for microelectronics applications. The effects of sample misalignment limit the accuracy of x-ray reflectivity as typically practiced. These effects may be properly accounted for by measuring the critical angle for reflection at many different x-ray wavelengths simultaneously. From this measurement, thin film density can be ascertained with much improved accuracy. The results of the x-ray reflectivity measurement are compared to those derived from MeV ion scattering.

1995 ◽  
Vol 406 ◽  
Author(s):  
W. E. Wallace ◽  
W. L. Wu

AbstractA novel method for determining thin film density by energy dispersive x-ray reflectivity is demonstrated for a polymer-derived spin-on-glass dielectric intended for microelectronics applications. The effects of sample misalignment limit the accuracy of x-ray reflectivity as typically practiced. These effects may be properly accounted for by measuring the critical angle for reflection at many different x-ray wavelengths simultaneously. From this measurement, thin film density can be ascertained with much improved accuracy. The results of the x-ray reflectivity measurement are compared to those derived from MeV ion scattering.


2015 ◽  
Vol 16 (2) ◽  
pp. 025007 ◽  
Author(s):  
Irene Prencipe ◽  
David Dellasega ◽  
Alessandro Zani ◽  
Daniele Rizzo ◽  
Matteo Passoni

2019 ◽  
Vol 91 (18) ◽  
pp. 11502-11506 ◽  
Author(s):  
Silvia Fruncillo ◽  
Matteo Trande ◽  
Christopher F. Blanford ◽  
Alessandra Astegno ◽  
Lu Shin Wong

1999 ◽  
Vol 32 (5) ◽  
pp. 854-858 ◽  
Author(s):  
Dirk C. Meyer ◽  
Kurt Richter ◽  
Hans-Georg Krane ◽  
Wolfgang Morgenroth ◽  
Peter Paufler

Energy-dispersive anomalous X-ray scattering has been used for the determination of the polarity of a noncentrosymmetric layer/substrate system. The method was applied to an epitaxically grown (Ga,In)P layer on a (001) GaAs substrate as an example to show its applicability as a routine procedure for noncentrosymmetric thin-film systems. In the simplest case, four energy spectra of various orders of the 111 reflections were sufficient to identify polarity, without the need for intensity corrections.


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