scholarly journals Quantitative Characterization of Misfit Dislocations at GaP/Si Heteroepitaxial Interfaces via Electron Channeling Contrast Imaging and Semi-Automated Image Analysis

2019 ◽  
Vol 25 (S2) ◽  
pp. 202-203 ◽  
Author(s):  
Ari N. Blumer ◽  
Jacob T. Boyer ◽  
Julia I. Deitz ◽  
Francisco A. Rodriguez ◽  
Tyler J. Grassman
Keyword(s):  
Image Analysis ◽  
Automated Image Analysis ◽  
Misfit Dislocations ◽  
Contrast Imaging ◽  
Quantitative Characterization ◽  
Electron Channeling

Assessment of the quantitative characterization of localized strain using electron diffraction contrast imaging

1997 ◽  
Vol 69 (3) ◽  
pp. 151-167 ◽  
Author(s):  
Koenraad G.F. Janssens ◽  
Omer Van der Biest ◽  
Jan Vanhellemont ◽  
Herman E. Maes
Keyword(s):  
Electron Diffraction ◽  
Contrast Imaging ◽  
Quantitative Characterization ◽  
Diffraction Contrast

Electron Channeling Contrast Imaging for Beyond Silicon Materials Characterization

2018 ◽  
Author(s):  
Libor Strakos ◽  
Ondrej Machek ◽  
Tomas Vystavel ◽  
Andreas Schulze ◽  
Han Han ◽  
...  
Keyword(s):  
Lattice Mismatch ◽  
Defect Density ◽  
Analytical Techniques ◽  
Device Performance ◽  
Contrast Imaging ◽  
Large Area ◽  
Electron Channeling ◽  
Silicon Materials ◽  
Non Destructive

Abstract As semiconductor devices continue to shrink, novel materials (e.g. (Si)Ge, III/V) are being tested and incorporated to boost device performance. Such materials are difficult to grow on Si wafers without forming crystalline defects due to lattice mismatch. Such defects can decrease or compromise device performance. For this reason, non-destructive, high throughput and reliable analytical techniques are required. In this paper Electron Channeling Contrast Imaging (ECCI), large area mapping and defect detection using deep learning are combined in an analytical workflow for the characterization of the defectivity of “beyond Silicon” materials. Such a workflow addresses the requirements for large areas 10-4 cm2 with defect density down to 104 cm-2.

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