Electron Channeling Contrast Imaging for Beyond Silicon Materials Characterization

2018 ◽  
Author(s):  
Libor Strakos ◽  
Ondrej Machek ◽  
Tomas Vystavel ◽  
Andreas Schulze ◽  
Han Han ◽  
...  
Keyword(s):  
Lattice Mismatch ◽  
Defect Density ◽  
Analytical Techniques ◽  
Device Performance ◽  
Contrast Imaging ◽  
Large Area ◽  
Electron Channeling ◽  
Silicon Materials ◽  
Non Destructive

Abstract As semiconductor devices continue to shrink, novel materials (e.g. (Si)Ge, III/V) are being tested and incorporated to boost device performance. Such materials are difficult to grow on Si wafers without forming crystalline defects due to lattice mismatch. Such defects can decrease or compromise device performance. For this reason, non-destructive, high throughput and reliable analytical techniques are required. In this paper Electron Channeling Contrast Imaging (ECCI), large area mapping and defect detection using deep learning are combined in an analytical workflow for the characterization of the defectivity of “beyond Silicon” materials. Such a workflow addresses the requirements for large areas 10-4 cm2 with defect density down to 104 cm-2.

scholarly journals Worth a Closer Look: Raman Spectra of Lead-Pipe Scale

Minerals ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 1047
Author(s):  
Jill Dill Pasteris ◽  
Yeunook Bae ◽  
Daniel E. Giammar ◽  
Sydney N. Dybing ◽  
Claude H. Yoder ◽  
...  
Keyword(s):  
Cross Sections ◽  
Water System ◽  
Analytical Techniques ◽  
Real Time Analysis ◽  
Fiber Optic Probes ◽  
Lead Pipe ◽  
Lead Pipes ◽  
Non Destructive

The identification and characterization of lead-bearing and associated minerals in scales on lead pipes are essential to understanding and predicting the mobilization of lead into drinking water. Despite its long-recognized usefulness in the unambiguous identification of crystalline and amorphous solids, distinguishing between polymorphic phases, and rapid and non-destructive analysis on the micrometer spatial scale, the Raman spectroscopy (RS) technique has been applied only occasionally in the analysis of scales in lead service lines (LSLs). This article illustrates multiple applications of RS not just for the identification of phases, but also compositional and structural characterization of scale materials in harvested lead pipes and experimental pipe-loop/recirculation systems. RS is shown to be a sensitive monitor of these characteristics through analyses on cross-sections of lead pipes, raw interior pipe walls, particulates captured in filters, and scrapings from pipes. RS proves to be especially sensitive to the state of crystallinity of scale phases (important to their solubility) and to the specific chemistry of phases precipitated upon the introduction of orthophosphate to the water system. It can be used effectively alone as well as in conjunction with more standard analytical techniques. By means of fiber-optic probes, RS has potential for in situ, real-time analysis within water-filled pipes.

Characterization of original and altered mineral phases of the Martian shergottite NWA1950 by means of non-destructive analytical techniques. Implications for the analyses of future returned samples from Mars

2021 ◽  
Author(s):  
Juan Manuel Madariaga ◽  
Leire Coloma ◽  
Cristina García-Florentino ◽  
Jennifer Huidobro ◽  
Imanol Torre-Fdez ◽  
...  
Keyword(s):  
Analytical Techniques ◽  
Mineral Phases ◽  
Non Destructive

scholarly journals Electron Channeling Contrast Imaging for Non-Destructive Analysis of Extended Defects in Semiconductor Thin Films and Device Structures

2014 ◽  
Vol 20 (S3) ◽  
pp. 1064-1065
Author(s):  
M.B. Katz ◽  
M.E. Twigg ◽  
S.I. Maximenko ◽  
N.D. Bassim ◽  
N.A. Mahadik ◽  
...  
Keyword(s):  
Thin Films ◽  
Extended Defects ◽  
Contrast Imaging ◽  
Electron Channeling ◽  
Semiconductor Thin Films ◽  
Device Structures ◽  
Destructive Analysis ◽  
Non Destructive

Microscale Characterization of Deformation Defects in Bulk Intermetallics Alloys Using Electron Channeling Contrast Imaging

2003 ◽  
Vol 426-432 ◽  
pp. 1885-1890
Author(s):  
M.A. Crimp ◽  
B.A. Simkin ◽  
B.-C. Ng ◽  
D.E. Mason ◽  
Thomas R. Bieler
Keyword(s):  
Contrast Imaging ◽  
Electron Channeling ◽  
Deformation Defects

scholarly journals Chemistry for Audio Heritage Preservation: A Review of Analytical Techniques for Audio Magnetic Tapes

Heritage ◽  
2019 ◽  
Vol 2 (2) ◽  
pp. 1551-1587
Author(s):  
Federica Bressan ◽  
Richard L. Hess ◽  
Paolo Sgarbossa ◽  
Roberta Bertani
Keyword(s):  
Analytical Techniques ◽  
Video Data ◽  
Cultural Resources ◽  
Chemical Identification ◽  
Heritage Preservation ◽  
The World ◽  
Instrumental Approaches ◽  
The Impact ◽  
Non Destructive

Vast and important cultural resources are entrusted to magnetic tape around the world, but they are susceptible to degradation, which may lead to severe replay problems. Audio magnetic tapes are complex and multicomponent devices containing organic compounds and metal systems, which can be potential catalysts for many degradative reactions in the presence of water, light, or heating. The aim of this review is to collect the literature concerning the analytical determinations and instrumental approaches that can achieve the chemical identification of the components in the tape and the degradation state. Thus, a combination of destructive (such as acetone extraction) and non-destructive techniques (such as ATR FTIR spectroscopy) have been proposed, together with SEM, ESEM, XRD and TGA analyses to assess the chemical and physical characterization of the tape with the purpose to individualize restoration treatments and optimize conditions for preservation. The impact of the studies reviewed in this paper may go beyond audio, being potentially relevant to video, data, instrumentation, and logging tapes.

scholarly journals Towards Non-Destructive Burgers Vector Identification of Dislocations in Electronic Materials via Electron Channeling Contrast Imaging

2010 ◽  
Vol 16 (S2) ◽  
pp. 1558-1559
Author(s):  
RJ Kamaladasa ◽  
ME Twigg ◽  
M De Graef ◽  
YN Picard
Keyword(s):  
Electronic Materials ◽  
Contrast Imaging ◽  
Burgers Vector ◽  
Electron Channeling ◽  
Non Destructive

Extended abstract of a paper presented at Microscopy and Microanalysis 2010 in Portland, Oregon, USA, August 1 – August 5, 2010.

Engineering CuInGaSSe2 Surface Properties to Enhance Device Performance

2003 ◽  
Vol 796 ◽  
Author(s):  
Shalini Menezes ◽  
Yan Li ◽  
Sharmila J. Menezes
Keyword(s):  
Surface Defects ◽  
Lattice Mismatch ◽  
Defect Density ◽  
Dynamic Equilibrium ◽  
Spectral Response ◽  
Buffer Layers ◽  
Device Performance ◽  
Air Oxidation ◽  
Special Effect ◽  
Response Measurement

ABSTRACTThe CuInGaSSe2/CdS heterostructure interface has a special effect on the performance of an important thin film photovoltaic device. The CdS buffer layer is essential to stabilize the performance of CuInGaSSe2 based devices. It adjusts the lattice mismatch at the absorber/window interface, repairs CuInGaSSe2 surface defects and protects it from air oxidation. Unfortunately, the CdS material has many environmental issues. This paper reports an alternate chemical approach to engineer the interface defects in CuInGaSSe2 and maximize its PV output. It describes a simple processing step to manipulate the defect density. This step could potentially reduce sensitivity to the ambience, widen the surface bandgap and replace the current hazardous processes used in state-of-the-art CuInGaSSe2 modules. Photocurrent and spectral response measurement in an electrolytic medium monitor the effects of surface modification, specific metal ions and time. The CuInGaSSe2 films respond easily to a number of external stimuli with either positive or negative changes in the electro-optic properties. Strong time dependence of the photocurrent suggests a dynamic equilibrium of point defects in the CuInGaSSe2 film. The results provide new insights into the effects of stoichiometry, deposition methods and oxide formation, on the defect chemistry. They also provide directions for reconfiguring the deep defects for enhanced device performance without the need for toxic etchants or buffer layers, and the environmental hazards associated with these steps.

Rapid characterization of extended defects in III–V/Si by electron channeling contrast imaging

2014 ◽  
Author(s):  
Santino D. Carnevale ◽  
Julia I. Deitz ◽  
John A. Carlin ◽  
Yoosuf N. Picard ◽  
Marc De Graef ◽  
...  
Keyword(s):  
Extended Defects ◽  
Contrast Imaging ◽  
Electron Channeling ◽  
Rapid Characterization
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