Atomic Resolution Imaging of Light Elements in a Crystalline Environment using Dynamic Hollow-Cone Illumination Transmission Electron Microscopy

2020 ◽  
Vol 26 (4) ◽  
pp. 623-629
Author(s):  
Hamish G. Brown ◽  
Jim Ciston
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Atomic Resolution ◽  
Light Elements ◽  
Hollow Cone ◽  
Transmission Electron ◽  
Crystalline Environment ◽  
Resolution Imaging

Abstract

Single-atom electron microscopy for energy-related nanomaterials

2020 ◽  
Vol 8 (32) ◽  
pp. 16142-16165 ◽  
Author(s):  
Mingquan Xu ◽  
Aowen Li ◽  
Meng Gao ◽  
Wu Zhou
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Scanning Transmission Electron Microscopy ◽  
Atomic Resolution ◽  
Single Atom ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Resolution Imaging ◽  
Imaging And Spectroscopy ◽  
Atom Level

The advances in aberration correction have enabled atomic-resolution imaging and spectroscopy in scanning transmission electron microscopy (STEM) under low primary voltages and pushed their detection limit down to the single-atom level.

Characterization of APBs in GaAs Grown on Si and Ge

1987 ◽  
Vol 91 ◽  
Author(s):  
C.B. Carter ◽  
N.-H. Cho ◽  
S. Mckernan ◽  
D.K. Wagner
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Relative Displacement ◽  
Atomic Resolution ◽  
Organometallic Vapor Phase Epitaxy ◽  
Image Simulation ◽  
Antiphase Boundaries ◽  
Transmission Electron ◽  
Resolution Imaging

ABSTRACTAntiphase boundaries are observed in epilayers of GaAs grown by organometallic vapor phase epitaxy on Ge substrates and are then invariably found to show a tendency to facet. Stacking-fault-like fringes caused by the translation of adjacent grains give the information on the relative displacement of the two grains at these interfaces and show that this translation does not have a fixed magnitude for a particular interface but varies with the orientation of the interface. Preferred orientations of the antiphase boundaries and the rigid-body translations have been studied using transmission electron microscopy. Interactions between antiphase boundaries and interfaces have been examined here in heterolayer structures consisting of alternating layers of GaAs and AlxGal−xAs grown on an (001) Ge substrate. The possibility of using atomic-resolution imaging to investigate the atomic structure of APBs is illustrated and the images are compared with those predicted by image simulation.

scholarly journals In-Line Holography in Transmission Electron Microscopy for the Atomic Resolution Imaging of Single Particle of Radiation-Sensitive Matter

Materials ◽  
2020 ◽  
Vol 13 (6) ◽  
pp. 1413 ◽  
Author(s):  
Elvio Carlino
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Single Particle ◽  
Soft Matter ◽  
Materials Science ◽  
Inorganic Materials ◽  
Atomic Resolution ◽  
Transmission Electron ◽  
Resolution Imaging ◽  
First Time

In this paper, for the first time it is shown how in-line holography in Transmission Electron Microscopy (TEM) enables the study of radiation-sensitive nanoparticles of organic and inorganic materials providing high-contrast holograms of single nanoparticles, while illuminating specimens with a density of current as low as 1–2 e−Å−2s−1. This provides a powerful method for true single-particle atomic resolution imaging and opens up new perspectives for the study of soft matter in biology and materials science. The approach is not limited to a particular class of TEM specimens, such as homogenous samples or samples specially designed for a particular TEM experiment, but has better application in the study of those specimens with differences in shape, chemical composition, crystallography, and orientation, which cannot be currently addressed at atomic resolution.

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