Dielectric-loaded L-band filters for high-power space applications

Author(s):  
Paolo Vallerotonda ◽  
Fabrizio Cacciamani ◽  
Luca Pelliccia ◽  
Alessandro Cazzorla ◽  
Davide Tiradossi ◽  
...  

Abstract The design and first experimental results of Tx and Rx L-band bandpass filters for a high-power satellite diplexer are presented in this paper. Designed in the framework of an ESA ARTES AT project, the filters are based on TM010 mode dielectric resonators. These resonators allow for better results in terms of volume occupation with respect to other dielectric resonators still maintaining high Q-factor values (>2000). Volume saving above 30% is achieved with respect to standard coaxial filters. The filter geometries and materials have been chosen in order to improve the power-handling and to cope with related critical issues for space applications (i.e. avoid any multipactor discharge in the operating RF power range and low-PIM response). Measurements of Tx filter show good correlation with the design in terms of central frequency, BW, and unloaded Q-factor (almost 3000). Measurements of Rx filter show a worse correlation with the design in terms of filter response shape. This is ascribed to size tolerances of one of the filter resonators. Multiple analyses are ongoing to remove this degradation in the final engineering model.

1990 ◽  
Author(s):  
S. Vigneron ◽  
B. Theron ◽  
C. Boschet ◽  
V. Madrangeas ◽  
P. Guillon

2014 ◽  
Vol 2014 ◽  
pp. 1-11 ◽  
Author(s):  
A. V. G. Subramanyam ◽  
D. Siva Reddy ◽  
V. K. Hariharan ◽  
V. V. Srinivasan ◽  
Ajay Chakrabarty

An S-band, compact, high power filter, for use in the Mars Orbiter Mission (MOM) of Indian Space Research Organization (ISRO), has been designed and tested for multipaction. The telemetry, tracking, and commanding (TT&C) transponder of MOM is required to handle continuous RF power of 200 W in the telemetry path besides simultaneously maintaining an isolation of greater than 145 dBc to its sensitive telecommand path. This is accomplished with the help of a complex diplexer, requiring high power, high rejection transmit path filter, and a low power receive path filter. To reduce the complexity in the multipaction-free design and testing, the transmit path filter of the diplexer is split into a low rejection filter integral to the diplexer and an external high rejection filter. This paper highlights the design and space qualification phases of this high rejection filter. Multipaction test results with 6 dB margin are also presented. Major concerns of this filter design are isolation, insertion loss, and multipaction. Mission performance of the on-board filter is normal.


2018 ◽  
Vol 77 ◽  
pp. 65-71 ◽  
Author(s):  
Reza Karimzadeh-Jazi ◽  
Mohammad Amin Honarvar ◽  
Farzad Khajeh-Khalili

Author(s):  
JOLLY RAJENDRAN ◽  
RAKESH PETER ◽  
KP SOMAN

In this paper, we share our experience of designing a circularly polarized square patch antenna at L band. The antenna is designed using a relatively cheap substrate FR-4 with permittivity r = 4:4 and loss tangent tan = 0:02. The antenna has a gain of 5dB. Simulated response shows that the designed antenna has an input impedance(Zin) of 50 approximately. An efficiency of 65% is obtained for a single patch. It has a narrow bandwidth and a high Q factor. The design procedure, feed mechanism and simulation results are presented in this paper.


2021 ◽  
Author(s):  
Paolo Vallerotonda ◽  
Fabrizio Cacciamani ◽  
Luca Pelliccia ◽  
Walter Steffe ◽  
Jaione Galdeano ◽  
...  

2014 ◽  
Vol 6 (6) ◽  
pp. 565-572 ◽  
Author(s):  
Olivier Jardel ◽  
Jean-Claude Jacquet ◽  
Lény Baczkowski ◽  
Dominique Carisetti ◽  
Didier Lancereau ◽  
...  

This paper presents power results of L-band packaged hybrid amplifiers using InAlN/GaN/SiC HEMT power dies. The high-power densities achieved both in pulsed and continuous wave (cw) modes confirm the interest of such technology for high-frequency, high-power, and high-temperature operation. We present here record RF power measurements for different versions of amplifiers. Up to 260 W, i.e. 3.6 W/mm, in pulsed (10 µs/10%) conditions, and 105 W, i.e. 2.9 W/mm, in cw conditions were achieved. Such results are made possible thanks to the impressive performances of InAlN/GaN transistors, even when operating at high temperatures. Unit cell transistors deliver output powers of 4.3 W/mm at Vds = 40 V in the cw mode of operation at the frequency of 2 GHz. The transistor process is described here, as well as the amplifiers design and measurements, with a particular focus to the thermal management aspects.


2005 ◽  
Vol 53 (2) ◽  
pp. 702-712 ◽  
Author(s):  
J. Krupka ◽  
M.E. Tobar ◽  
J.G. Hartnett ◽  
D. Cros ◽  
J.-M. Le Floch

2014 ◽  
Vol 73 (1) ◽  
pp. 73-81 ◽  
Author(s):  
A. Ya. Kirichenko ◽  
G. V. Golubnichaya ◽  
I. G. Maximchuk ◽  
V. B. Yurchenko

Sign in / Sign up

Export Citation Format

Share Document