Quantifying the Effect of Step–Step Exclusion on Dynamically Unstable Vicinal Surfaces: Step Bunching without Macrostep Formation

2020 ◽  
Vol 20 (11) ◽  
pp. 7246-7259
Author(s):  
Hristina Popova ◽  
Filip Krzyżewski ◽  
Magdalena A. Załuska-Kotur ◽  
Vesselin Tonchev
2021 ◽  
Vol 104 (3) ◽  
Author(s):  
L. Benoit–Maréchal ◽  
M. E. Jabbour ◽  
N. Triantafyllidis

2007 ◽  
Vol 76 (3) ◽  
Author(s):  
Pak-Wing Fok ◽  
Rodolfo R. Rosales ◽  
Dionisios Margetis

2000 ◽  
Vol 467 (1-3) ◽  
pp. 58-84 ◽  
Author(s):  
V.B. Shenoy ◽  
Shiwei Zhang ◽  
W.F. Saam

2001 ◽  
Vol 227-228 ◽  
pp. 46-50 ◽  
Author(s):  
S Martini ◽  
A.A Quivy ◽  
D Ugarte ◽  
C Lange ◽  
W Richter ◽  
...  

1999 ◽  
Vol 06 (01) ◽  
pp. 27-34 ◽  
Author(s):  
MARGRET GIESEN ◽  
GEORG SCHULZE ICKING-KONERT

We have measured the terrace width distribution on copper (111) vicinal surfaces with (100) steps. For all surfaces, the distribution is well fitted by a Gaussian. The width of the Gaussian scales with the mean terrace width L, which is indicative of a repulsive 1/L2 interaction potential between steps. We determine an interaction strength of the potential of 3.2± 0.2 meV per atom length. From the temperature-dependent analysis of the step–step distance distribution, we find a kink formation energy for (100) steps of 0.12± 0.03 eV, which is consistent with previous measurements of the kink energy on copper (100) vicinal surfaces.


2001 ◽  
Vol 482-485 ◽  
pp. 1413-1418 ◽  
Author(s):  
F Raouafi ◽  
C Barreteau ◽  
M.C Desjonquères ◽  
D Spanjaard
Keyword(s):  

2001 ◽  
Vol 175-176 ◽  
pp. 62-68 ◽  
Author(s):  
T.L Einstein ◽  
Howard L Richards ◽  
Saul D Cohen ◽  
O Pierre-Louis ◽  
M Giesen

1997 ◽  
Vol 11 (31) ◽  
pp. 3691-3702 ◽  
Author(s):  
J.-J. Métois ◽  
M. Audiffren

The velocity of monoatomic step motion in the neighborhood of a bunch has been measured in situ using a UHV electron microscope. The width of step bunches at different temperatures and the intrinsic time that lead to step bunching have also been determined. Direct and alternating current were used to heat the Silicon(111) between 1000°C and 1300°C. The results show that the diffusion regime prevails. The asymmetry of the surface diffusion of adatoms is proved experimentally. It is consistent with the adatom electromigration effects. The surface diffusion field under the influence of an electric current can induce an attractive force between the steps. This force balances the step-step repulsive interactions (entropic and energetic) inside the bunch and stabilizes its width. The effective charge on the adatom has been estimated from the critical frequency of AC when the step bunching does not operate. It is around 0.001 electron.


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