Design of a p-Type Electrode for Enhancing Electronic Conduction in High-Mn, Li-Rich Oxides

2016 ◽  
Vol 28 (22) ◽  
pp. 8201-8209 ◽  
Author(s):  
Jin-Myoung Lim ◽  
Taesoon Hwang ◽  
Min-Sik Park ◽  
Maenghyo Cho ◽  
Kyeongjae Cho
Keyword(s):  
Electronic Conduction ◽  
P Type

Hydration of Rutile TiO2: Thermodynamics and Effects on n- and p-Type Electronic Conduction

2010 ◽  
Vol 114 (19) ◽  
pp. 9139-9145 ◽  
Author(s):  
Skjalg Erdal ◽  
Camilla Kongshaug ◽  
Tor S. Bjørheim ◽  
Niina Jalarvo ◽  
Reidar Haugsrud ◽  
...  
Keyword(s):  
Electronic Conduction ◽  
Rutile Tio2 ◽  
P Type

scholarly journals Field-induced p-n transition in yttria-stabilized zirconia

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Marc Jovaní ◽  
Héctor Beltrán-Mir ◽  
Eloísa Cordoncillo ◽  
Anthony R. West
Keyword(s):  
Yttria Stabilized Zirconia ◽  
Electronic Conduction ◽  
Stabilized Zirconia ◽  
Zirconia Ceramics ◽  
Pressure Surface ◽  
Yttria Content ◽  
Electronic Conductivities ◽  
Ion Conducting ◽  
P Type ◽  
Oxide Ion

AbstractOxide ion conducting yttria-stabilised zirconia ceramics show the onset of electronic conduction under a small bias voltage. Compositions with a high yttria content undergo a transition from p-type to n-type behavior at voltages in the range 2.4 to 10 V, which also depends on oxygen partial pressure. Surface reactions have a direct influence on bulk electronic conductivities, with possible implications for voltage-induced flash phenomena and resistive switching.

P-Type electronic conduction in CeO2- and LaGaO3-based solid electrolytes

Ionics ◽  
2002 ◽  
Vol 8 (3-4) ◽  
pp. 215-222 ◽  
Author(s):  
V. V. Kharton ◽  
A. A. Yaremchenko ◽  
A. P. Viskup ◽  
F. M. Figueiredo ◽  
A. L. Shaulo ◽  
...  
Keyword(s):  
Solid Electrolytes ◽  
Electronic Conduction ◽  
P Type

Mixed Ionic-Electronic Conduction in N1 Doped Lanthanum Gallate Perovskites

1997 ◽  
Vol 496 ◽  
Author(s):  
N. J. Long ◽  
H. L. Tuller ◽  
Lower Hurt ◽  
New Zealand
Keyword(s):  
Activation Energy ◽  
Thermal Expansion ◽  
Ionic Conductivity ◽  
Electronic Conductivity ◽  
Lanthanum Gallate ◽  
Electronic Conduction ◽  
Similar Magnitude ◽  
Ac Impedance Spectroscopy ◽  
Dopant Level ◽  
P Type

ABSTRACTLanthanum gallate is a promising material for “monolithic” fuel cells or oxygen pumps, i.e. one in which the electrolyte and electrodes are formed from a common phase. We have investigated La1−xSrxGa1–yNiyO3 (LSGNx-y) with x=0.1 and y=0.2 and 0.5 as a potential cathode material for such an electrochemical device. The σ(PO2,T) for LSGN10–20 points to a p-type electronic conductivity at high PO2 and predominantly ionic conductivity at low PO2. LSGN10–50 has an electronic conductivity suitable for SOFC applications of approximately 50 S/cm in air at high temperature. AC impedance spectroscopy on an electron blocking cell of the form M/LSG/LSGN/LSG/M was used to isolate the ionic conductivity in the LSGN10–20 material. The ionic conductivity was found to have a similar magnitude and activation energy to that of undoped LSG material with σi= 0.12 S/cm at 800°C and EA= 1.0 ± 0.1 eV. Thermal expansion measurements on the LSGN materials were characterized as a function of temperature and dopant level and were found to match that of the electrolyte under opeating conditions.

Impedance analysis of Sr-substituted CePO4 with mixed protonic and p-type electronic conduction

2009 ◽  
Vol 35 (4) ◽  
pp. 1481-1486 ◽  
Author(s):  
Esmeralda Gómez del Moral ◽  
Duncan P. Fagg ◽  
Eva Chinarro ◽  
João C.C. Abrantes ◽  
José Ramón Jurado ◽  
...  
Keyword(s):  
Impedance Analysis ◽  
Electronic Conduction ◽  
P Type

Interface morphology of thermal oxide grown on polycrystalline silicon by different processes

1992 ◽  
Vol 50 (2) ◽  
pp. 1396-1397
Author(s):  
H. Yen ◽  
E. P. Kvam ◽  
R. Bashir ◽  
S. Venkatesan ◽  
G. W. Neudeck
Keyword(s):  
Integrated Circuits ◽  
Polycrystalline Silicon ◽  
Silicon Films ◽  
Interface Morphology ◽  
Oxide Interface ◽  
Poly Silicon ◽  
Thermal Oxide ◽  
Grain Orientations ◽  
Polycrystalline Silicon Films ◽  
P Type

Polycrystalline silicon, when highly doped, is commonly used in microelectronics applications such as gates and interconnects. The packing density of integrated circuits can be enhanced by fabricating multilevel polycrystalline silicon films separated by insulating SiO2 layers. It has been found that device performance and electrical properties are strongly affected by the interface morphology between polycrystalline silicon and SiO2. As a thermal oxide layer is grown, the poly silicon is consumed, and there is a volume expansion of the oxide relative to the atomic silicon. Roughness at the poly silicon/thermal oxide interface can be severely deleterious due to stresses induced by the volume change during oxidation. Further, grain orientations and grain boundaries may alter oxidation kinetics, which will also affect roughness, and thus stress.Three groups of polycrystalline silicon films were deposited by LPCVD after growing thermal oxide on p-type wafers. The films were doped with phosphorus or arsenic by three different methods.

Determination of arsenic atom distribution arsenic doped silicon using HOLZ-line analysis

1996 ◽  
Vol 54 ◽  
pp. 976-977
Author(s):  
Y. Kikuchi ◽  
N. Hashikawa ◽  
F. Uesugi ◽  
E. Wakai ◽  
K. Watanabe ◽  
...  
Keyword(s):  
Inelastic Scattering ◽  
Zone Axis ◽  
Experimental Result ◽  
Background Intensity ◽  
Crystal Thickness ◽  
Arsenic Atom ◽  
Doped Silicon ◽  
P Type ◽  
Line Analysis

In order to measure the concentration of arsenic atoms in nanometer regions of arsenic doped silicon, the HOLZ analysis is carried out underthe exact [011] zone axis observation. In previous papers, it is revealed that the position of two bright lines in the outer SOLZ structures on the[011] zone axis is little influenced by the crystal thickness and the background intensity caused by inelastic scattering electrons, but is sensitive to the concentration of As atoms substitutbnal for Siatomic site.As the result, it becomes possible to determine the concentration of electrically activated As atoms in silicon within an observed area by means of the simple fitting between experimental result and dynamical simulatioan. In the present work, in order to investigate the distribution of electrically activated As in silicon, the outer HOLZ analysis is applied using a nanometer sized probe of TEM equipped with a FEG.Czodiralsld-gown<100>orientated p-type Si wafers with a resistivity of 10 Ώ cm are used for the experiments.TheAs+ implantation is performed at a dose of 5.0X1015cm-2at 25keV.

Investigating the functional link between TMEM165 and SPCA1

2019 ◽  
Vol 476 (21) ◽  
pp. 3281-3293 ◽  
Author(s):  
Elodie Lebredonchel ◽  
Marine Houdou ◽  
Hans-Heinrich Hoffmann ◽  
Kateryna Kondratska ◽  
Marie-Ange Krzewinski ◽  
...  
Keyword(s):  
Subcellular Localization ◽  
Complete Loss ◽  
Protein Family ◽  
Uncharacterized Protein ◽  
Functional Link ◽  
P Type

TMEM165 was highlighted in 2012 as the first member of the Uncharacterized Protein Family 0016 (UPF0016) related to human glycosylation diseases. Defects in TMEM165 are associated with strong Golgi glycosylation abnormalities. Our previous work has shown that TMEM165 rapidly degrades with supraphysiological manganese supplementation. In this paper, we establish a functional link between TMEM165 and SPCA1, the Golgi Ca2+/Mn2+ P-type ATPase pump. A nearly complete loss of TMEM165 was observed in SPCA1-deficient Hap1 cells. We demonstrate that TMEM165 was constitutively degraded in lysosomes in the absence of SPCA1. Complementation studies showed that TMEM165 abundance was directly dependent on SPCA1's function and more specifically its capacity to pump Mn2+ from the cytosol into the Golgi lumen. Among SPCA1 mutants that differentially impair Mn2+ and Ca2+ transport, only the Q747A mutant that favors Mn2+ pumping rescues the abundance and Golgi subcellular localization of TMEM165. Interestingly, the overexpression of SERCA2b also rescues the expression of TMEM165. Finally, this paper highlights that TMEM165 expression is linked to the function of SPCA1.

Structural dynamics of P-type ATPase ion pumps

2019 ◽  
Vol 47 (5) ◽  
pp. 1247-1257 ◽  
Author(s):  
Mateusz Dyla ◽  
Sara Basse Hansen ◽  
Poul Nissen ◽  
Magnus Kjaergaard
Keyword(s):  
Structural Dynamics ◽  
Single Molecule ◽  
New Technologies ◽  
Atp Hydrolysis ◽  
Resonance Energy Transfer ◽  
Resonance Energy ◽  
Time Resolved ◽  
Dynamics Simulations ◽  
Types Of Information ◽  
P Type

Abstract P-type ATPases transport ions across biological membranes against concentration gradients and are essential for all cells. They use the energy from ATP hydrolysis to propel large intramolecular movements, which drive vectorial transport of ions. Tight coordination of the motions of the pump is required to couple the two spatially distant processes of ion binding and ATP hydrolysis. Here, we review our current understanding of the structural dynamics of P-type ATPases, focusing primarily on Ca2+ pumps. We integrate different types of information that report on structural dynamics, primarily time-resolved fluorescence experiments including single-molecule Förster resonance energy transfer and molecular dynamics simulations, and interpret them in the framework provided by the numerous crystal structures of sarco/endoplasmic reticulum Ca2+-ATPase. We discuss the challenges in characterizing the dynamics of membrane pumps, and the likely impact of new technologies on the field.

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