Enhanced Bimolecular Reaction in a Two-Component Fluid under Pyrolytic Conditions: In Situ Probing of the Pyrolysis of Jet Fuel Surrogates Using a Supersonic Expansion Molecular Beam Mass Spectrometer

2018 ◽  
Vol 32 (3) ◽  
pp. 3391-3398 ◽  
Author(s):  
Christopher E. Bunker ◽  
Andrew F. DeBlase ◽  
Taylor A. Youtsler ◽  
Nathan L. Sanders ◽  
William K. Lewis
2006 ◽  
Vol 77 (5) ◽  
pp. 054102 ◽  
Author(s):  
R. Horn ◽  
K. Ihmann ◽  
J. Ihmann ◽  
F. C. Jentoft ◽  
M. Geske ◽  
...  

Author(s):  
D. Loretto ◽  
J. M. Gibson ◽  
S. M. Yalisove ◽  
R. T. Tung

The cobalt disilicide/silicon system has potential applications as a metal-base and as a permeable-base transistor. Although thin, low defect density, films of CoSi2 on Si(111) have been successfully grown, there are reasons to believe that Si(100)/CoSi2 may be better suited to the transmission of electrons at the silicon/silicide interface than Si(111)/CoSi2. A TEM study of the formation of CoSi2 on Si(100) is therefore being conducted. We have previously reported TEM observations on Si(111)/CoSi2 grown both in situ, in an ultra high vacuum (UHV) TEM and ex situ, in a conventional Molecular Beam Epitaxy system.The procedures used for the MBE growth have been described elsewhere. In situ experiments were performed in a JEOL 200CX electron microscope, extensively modified to give a vacuum of better than 10-9 T in the specimen region and the capacity to do in situ sample heating and deposition. Cobalt was deposited onto clean Si(100) samples by thermal evaporation from cobalt-coated Ta filaments.


2003 ◽  
Author(s):  
R. T. Short ◽  
Gottfried P. Kibelka ◽  
Robert H. Byrne ◽  
David Hollander

1989 ◽  
Vol 160 ◽  
Author(s):  
T. L. Lin ◽  
C. W. Nieh

AbstractEpitaxial IrSi3 films have been grown on Si (111) by molecular beam epitaxy (MBE) at temperatures ranging from 630 to 800 °C and by solid phase epitaxy (SPE) at 500 °C. Good surface morphology was observed for IrSi3 layers grown by MBE at temperatures below 680 °C, and an increasing tendency to form islands is noted in samples grown at higher temperatures. Transmission electron microscopy (TEM) analysis reveals that the IrSi3 layers grow epitaxially on Si(111) with three epitaxial modes depending on the growth conditions. For IrSi3 layers grown by MBE at 630 °C, two epitaxial modes were observed with ~ 50% area coverage for each mode. Single mode epitaxial growth was achieved at a higher MBE growth temperature, but with island formation in the IrSi3 layer. A template technique was used with MBE to improve the IrSi3 surface morphology at higher growth temperatures. Furthermore, single-crystal IrSi3 was grown on Si(111) at 500 °C by SPE, with annealing performed in-situ in a TEM chamber.


2009 ◽  
Vol 11 (20) ◽  
pp. 3958 ◽  
Author(s):  
Daniel Irimia ◽  
Rob Kortekaas ◽  
Maurice H. M. Janssen

Author(s):  
Iannis Dandouras ◽  
Philippe Garnier ◽  
Donald G Mitchell ◽  
Edmond C Roelof ◽  
Pontus C Brandt ◽  
...  

Titan's nitrogen-rich atmosphere is directly bombarded by energetic ions, due to its lack of a significant intrinsic magnetic field. Singly charged energetic ions from Saturn's magnetosphere undergo charge-exchange collisions with neutral atoms in Titan's upper atmosphere, or exosphere, being transformed into energetic neutral atoms (ENAs). The ion and neutral camera, one of the three sensors that comprise the magnetosphere imaging instrument (MIMI) on the Cassini/Huygens mission to Saturn and Titan, images these ENAs like photons, and measures their fluxes and energies. These remote-sensing measurements, combined with the in situ measurements performed in the upper thermosphere and in the exosphere by the ion and neutral mass spectrometer instrument, provide a powerful diagnostic of Titan's exosphere and its interaction with the Kronian magnetosphere. These observations are analysed and some of the exospheric features they reveal are modelled.


1998 ◽  
Vol 73 (26) ◽  
pp. 3857-3859 ◽  
Author(s):  
D. Stifter ◽  
M. Schmid ◽  
K. Hingerl ◽  
A. Bonanni ◽  
M. Garcia-Rocha ◽  
...  

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