Revealing the Real Size of a Porphyrin Molecule with Quantum Confinement Probing via Temperature-Dependent Photoluminescence Spectroscopy

2020 ◽  
Vol 124 (13) ◽  
pp. 2672-2682 ◽  
Author(s):  
Nurhayati ◽  
Veinardi Suendo ◽  
Anita Alni ◽  
Agustinus A. Nugroho ◽  
Yutaka Majima ◽  
...  
Keyword(s):  
Quantum Confinement ◽  
Photoluminescence Spectroscopy ◽  
Temperature Dependent ◽  
Porphyrin Molecule ◽  
The Real ◽  
Real Size ◽  
Temperature Dependent Photoluminescence

scholarly journals Quantum confinement dependence of exciton localization in a-plane GaN/AlGaN multiquantum wells investigated by temperature dependent photoluminescence

2015 ◽  
Vol 5 (11) ◽  
pp. 2608 ◽  
Author(s):  
Feng Wu ◽  
Jun Zhang ◽  
Shuai Wang ◽  
Hanling Long ◽  
Jiangnan Dai ◽  
...  
Keyword(s):  
Quantum Confinement ◽  
Temperature Dependent ◽  
Exciton Localization ◽  
Temperature Dependent Photoluminescence

Temperature dependent photoluminescence spectroscopy of InAs/GaAs solar cells

2010 ◽  
Author(s):  
Christopher G. Bailey ◽  
Stephen J. Polly ◽  
Joanne Okvath ◽  
David V. Forbes ◽  
Cory D. Cress ◽  
...  
Keyword(s):  
Solar Cells ◽  
Photoluminescence Spectroscopy ◽  
Temperature Dependent ◽  
Temperature Dependent Photoluminescence

Quantitative description of disorder parameters in (GaIn)(NAs) quantum wells from the temperature-dependent photoluminescence spectroscopy

2005 ◽  
Vol 98 (6) ◽  
pp. 063518 ◽  
Author(s):  
O. Rubel ◽  
M. Galluppi ◽  
S. D. Baranovskii ◽  
K. Volz ◽  
L. Geelhaar ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Quantitative Description ◽  
Photoluminescence Spectroscopy ◽  
Temperature Dependent ◽  
Temperature Dependent Photoluminescence

scholarly journals Temperature dependent photoluminescence from porous silicon nanostructures: Quantum confinement and oxide related transitions

2011 ◽  
Vol 110 (9) ◽  
pp. 094309 ◽  
Author(s):  
Mallar Ray ◽  
Nil Ratan Bandyopadhyay ◽  
Ujjwal Ghanta ◽  
Robert F. Klie ◽  
Ashit Kumar Pramanick ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Quantum Confinement ◽  
Silicon Nanostructures ◽  
Temperature Dependent ◽  
Temperature Dependent Photoluminescence

Quantification of hot carrier thermalization in PbS colloidal quantum dots by power and temperature dependent photoluminescence spectroscopy

RSC Advances ◽  
2016 ◽  
Vol 6 (93) ◽  
pp. 90846-90855 ◽  
Author(s):  
Wenkai Cao ◽  
Zewen Zhang ◽  
Rob Patterson ◽  
Yuan Lin ◽  
Xiaoming Wen ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Solar Cell ◽  
Photoluminescence Spectroscopy ◽  
Colloidal Quantum Dots ◽  
Temperature Dependent ◽  
Hot Carrier ◽  
Carrier Thermalization ◽  
Temperature Dependent Photoluminescence

PbS QDs are studied as attractive candidates to be applied as hot carrier solar cell absorbers.

Combustion Synthesis and Temperature Dependent Photoluminescence of Nanocrystalline Y2Zr2O7: Eu3+

2009 ◽  
Vol 24 (2) ◽  
pp. 239-242 ◽  
Author(s):  
Dian-Yuan WANG ◽  
Qing-Kai WANG ◽  
Zhang-Yong CHANG ◽  
Yan-Yan GUO ◽  
Xing-Hua WU
Keyword(s):  
Combustion Synthesis ◽  
Temperature Dependent ◽  
Temperature Dependent Photoluminescence

Temperature-dependent photoluminescence from MEH-PPV and MEH-OPPV containing oxadiazole in the main chain

2006 ◽  
Vol 84 (1-2) ◽  
pp. 203-206 ◽  
Author(s):  
F. Kong ◽  
X.L. Wu ◽  
G.S. Huang ◽  
R.K. Yuan ◽  
C.Z. Yang ◽  
...  
Keyword(s):  
Main Chain ◽  
Temperature Dependent ◽  
Temperature Dependent Photoluminescence

scholarly journals Temperature-Dependent Photoluminescence of ZnO Thin Films Grown on Off-Axis SiC Substrates by APMOCVD

Materials ◽  
2021 ◽  
Vol 14 (4) ◽  
pp. 1035
Author(s):  
Ivan Shtepliuk ◽  
Volodymyr Khranovskyy ◽  
Arsenii Ievtushenko ◽  
Rositsa Yakimova
Keyword(s):  
Optical Properties ◽  
Structural Quality ◽  
Organic Chemical ◽  
Zno Films ◽  
Vicinal Surfaces ◽  
Temperature Dependent ◽  
Step Flow ◽  
Step Flow Growth ◽  
First Time ◽  
Temperature Dependent Photoluminescence

The growth of high-quality ZnO layers with optical properties congruent to those of bulk ZnO is still a great challenge. Here, for the first time, we systematically study the morphology and optical properties of ZnO layers grown on SiC substrates with off-cut angles ranging from 0° to 8° by using the atmospheric pressure meta–organic chemical vapor deposition (APMOCVD) technique. Morphology analysis revealed that the formation of the ZnO films on vicinal surfaces with small off-axis angles (1.4°–3.5°) follows the mixed growth mode: from one side, ZnO nucleation still occurs on wide (0001) terraces, but from another side, step-flow growth becomes more apparent with the off-cut angle increasing. We show for the first time that the off-cut angle of 8° provides conditions for step-flow growth of ZnO, resulting in highly improved growth morphology, respectively structural quality. Temperature-dependent photoluminescence (PL) measurements showed a strong dependence of the excitonic emission on the off-cut angle. The dependences of peak parameters for bound exciton and free exciton emissions on temperature were analyzed. The present results provide a correlation between the structural and optical properties of ZnO on vicinal surfaces and can be utilized for controllable ZnO heteroepitaxy on SiC toward device-quality ZnO epitaxial layers with potential applications in nano-optoelectronics.

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