scholarly journals CO Stretch Vibration Lives Long on Au(111)

2019 ◽  
Vol 10 (5) ◽  
pp. 1043-1047 ◽  
Author(s):  
Ivor Lončarić ◽  
M. Alducin ◽  
J. I. Juaristi ◽  
D. Novko
Keyword(s):  
Optics ◽  
2020 ◽  
Vol 1 (2) ◽  
pp. 175-190
Author(s):  
Gerwin W. Steen ◽  
Adam D. Wexler ◽  
Elmar C. Fuchs ◽  
Herman L. Offerhaus

In this work, we present a feasibility study of integrated optofluidic chips to measure the ionic content in water using differential absorption spectroscopy. The second overtone of the OH-stretch vibration of water is used as indicator for both the type and concentration of the dissolved ions. The optofluidic chips are based on silicon nitride (TripleX) containing Mach–Zehnder interferometers (MZI) with two 5 cm sensing paths for the sample and reference arms, respectively. Simulations show that, theoretically, the determination of both the type and concentration of a mixture of four electrolytes is possible with the techniques presented. However, the performance of the chips deviated from the expected results due to the insufficient reproducibility and precision in the fabrication process. Therefore, at this early stage, the chips presented here could only determine the ion concentration, but not differentiate between the different ion types. Still, this work represents the first steps towards the realization of an online and real-time sensor of ionic content in water.


1991 ◽  
Vol 95 (6) ◽  
pp. 3924-3929 ◽  
Author(s):  
Friedrich Huisken ◽  
Axel Kulcke ◽  
Curtis Laush ◽  
James M. Lisy
Keyword(s):  

1989 ◽  
Vol 149 ◽  
Author(s):  
S. Mitra ◽  
X.-L. Wu ◽  
R. Shinar ◽  
J. Shinar

ABSTRACTSecondary ion mass spectrometry (SIMS) and IR measurements of long range deuterium motion in rf sputter deposited (rf sp) p-doped a-Si:H and undoped a-Ge:H are compared to recently published results on undoped rf sp a-Si:H, which exhibited strongly power-law time dependent diffusion constants (exponent α= 0.75±0.1) in films of as-deposited content of di-H and tri-H bonds (usually associated with microvoids) Ndo –4–5 at.%. In pdoped a-Si:H samples where Ndo-l.8–3.8at.%, the diffusion is much faster, but the exponent is similar. In undoped a-Ge:H exhibiting a stretch vibration band indicative of mono-H bonding only, the diffusion is about one order of magnitude faster than in undoped a-Si:H, and α = 0.23. The results are discussed in relation to both the multiple trapping (dispersive) and defect mediated diffusion models.


2001 ◽  
Vol 114 (7) ◽  
pp. 3182-3186 ◽  
Author(s):  
M. A. F. H. van den Broek ◽  
H. -K. Nienhuys ◽  
H. J. Bakker

1995 ◽  
Vol 102 (2) ◽  
pp. 675-679 ◽  
Author(s):  
Jacqueline L. Scott ◽  
David Luckhaus ◽  
Steven S. Brown ◽  
F. Fleming Crim

2012 ◽  
Vol 111 (4) ◽  
pp. 497-504 ◽  
Author(s):  
Xiaofeng Liu ◽  
Qingzhong Li ◽  
Jianbo Cheng ◽  
Wenzuo Li

1980 ◽  
Vol 101 (1-3) ◽  
pp. 348-354 ◽  
Author(s):  
J. Timper ◽  
J. Billmann ◽  
A. Otto ◽  
I. Pockrand

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