Scaling and Graphical Transport-Map Analysis of Ambipolar Schottky-Barrier Thin-Film Transistors Based on a Parallel Array of Si Nanowires

Nano Letters ◽  
2015 ◽  
Vol 15 (7) ◽  
pp. 4578-4584 ◽  
Author(s):  
Dae-Young Jeon ◽  
Sebastian Pregl ◽  
So Jeong Park ◽  
Larysa Baraban ◽  
Gianaurelio Cuniberti ◽  
...  
Keyword(s):  
Thin Film ◽  
Schottky Barrier ◽  
Thin Film Transistors ◽  
Si Nanowires ◽  
Parallel Array ◽  
Map Analysis

Reconfigurable thin-film transistors based on a parallel array of Si-nanowires

2021 ◽  
Vol 129 (12) ◽  
pp. 124504
Author(s):  
Dae-Young Jeon ◽  
So Jeong Park ◽  
Sebastian Pregl ◽  
Thomas Mikolajick ◽  
Walter M. Weber
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Si Nanowires ◽  
Parallel Array

Transparent thin film transistors based on parallel array of Si nanowires

2010 ◽  
Author(s):  
Dong Hyun Lee ◽  
Jae Woong Choung ◽  
Yong Bum Pyun ◽  
Kwangsoo Son ◽  
Won Il Park
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Si Nanowires ◽  
Parallel Array

scholarly journals A Study about Schottky Barrier Height and Ideality Factor in Thin Film Transistors with Metal/Zinc Oxide Nanoparticles Structures Aiming Flexible Electronics Application

Nanomaterials ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 1188
Author(s):  
Ivan Rodrigo Kaufmann ◽  
Onur Zerey ◽  
Thorsten Meyers ◽  
Julia Reker ◽  
Fábio Vidor ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Flexible Electronics ◽  
Thin Film Transistors ◽  
Zinc Oxide Nanoparticles ◽  
Schottky Barrier Height ◽  
Oxide Nanoparticles ◽  
Semiconductor Interfaces

Zinc oxide nanoparticles (ZnO NP) used for the channel region in inverted coplanar setup in Thin Film Transistors (TFT) were the focus of this study. The regions between the source electrode and the ZnO NP and the drain electrode were under investigation as they produce a Schottky barrier in metal-semiconductor interfaces. A more general Thermionic emission theory must be evaluated: one that considers both metal/semiconductor interfaces (MSM structures). Aluminum, gold, and nickel were used as metallization layers for source and drain electrodes. An organic-inorganic nanocomposite was used as a gate dielectric. The TFTs transfer and output characteristics curves were extracted, and a numerical computational program was used for fitting the data; hence information about Schottky Barrier Height (SBH) and ideality factors for each TFT could be estimated. The nickel metallization appears with the lowest SBH among the metals investigated. For this metal and for higher drain-to-source voltages, the SBH tended to converge to some value around 0.3 eV. The developed fitting method showed good fitting accuracy even when the metallization produced different SBH in each metal-semiconductor interface, as was the case for gold metallization. The Schottky effect is also present and was studied when the drain-to-source voltages and/or the gate voltage were increased.

Flexible Single-Crystalline Ge p-Channel Thin-Film Transistors With Schottky-Barrier Source/Drain on Polyimide Substrates

2010 ◽  
Vol 31 (5) ◽  
pp. 422-424 ◽  
Author(s):  
William Hsu ◽  
Cheng-Yi Peng ◽  
Cheng-Ming Lin ◽  
Yen-Yu Chen ◽  
Yen-Ting Chen ◽  
...  
Keyword(s):  
Thin Film ◽  
Schottky Barrier ◽  
Thin Film Transistors ◽  
Single Crystalline

scholarly journals Schottky-barrier thin-film transistors based on HfO2-capped InSe

2019 ◽  
Vol 115 (3) ◽  
pp. 033502 ◽  
Author(s):  
Yiming Wang ◽  
Jiawei Zhang ◽  
Guangda Liang ◽  
Yanpeng Shi ◽  
Yifei Zhang ◽  
...  
Keyword(s):  
Thin Film ◽  
Schottky Barrier ◽  
Thin Film Transistors

Fabrication and Characterization of Schottky Barrier Polysilicon Thin-Film Transistors with Excimer-Laser Crystallized Channel

2003 ◽  
Vol 42 (Part 1, No. 4B) ◽  
pp. 2127-2131
Author(s):  
Kuan-Lin Yeh ◽  
Horng-Chih Lin ◽  
Ren-Wei Tsai ◽  
Ming Hsien Lee ◽  
Tiao-Yuan Huang
Keyword(s):  
Thin Film ◽  
Schottky Barrier ◽  
Excimer Laser ◽  
Thin Film Transistors ◽  
Fabrication And Characterization
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