scholarly journals Imaging of Interlayer Coupling in van der Waals Heterostructures Using a Bright-Field Optical Microscope

Nano Letters ◽  
2017 ◽  
Vol 17 (9) ◽  
pp. 5342-5349 ◽  
Author(s):  
Evgeny M. Alexeev ◽  
Alessandro Catanzaro ◽  
Oleksandr V. Skrypka ◽  
Pramoda K. Nayak ◽  
Seongjoon Ahn ◽  
...  
2019 ◽  
Vol 21 (42) ◽  
pp. 23611-23619 ◽  
Author(s):  
Xinming Qin ◽  
Wei Hu ◽  
Jinlong Yang

Electric field and interlayer coupling tunable Schottky and Ohmic contacts in graphene and tellurene van der Waals heterostructures have been predicted theoretically to expect potential applications in graphene-based field-effect transistors.


2019 ◽  
Vol 99 (20) ◽  
Author(s):  
Luojun Du ◽  
Yanchong Zhao ◽  
Zhiyan Jia ◽  
Mengzhou Liao ◽  
Qinqin Wang ◽  
...  

2021 ◽  
Vol 129 (15) ◽  
pp. 155304
Author(s):  
Sneha Sinha ◽  
Sujit Kumar ◽  
Sunil K. Arora ◽  
Anjali Sharma ◽  
Monika Tomar ◽  
...  

Nano Research ◽  
2016 ◽  
Vol 9 (12) ◽  
pp. 3772-3780 ◽  
Author(s):  
Mei Zhao ◽  
Wenting Zhang ◽  
Manman Liu ◽  
Chao Zou ◽  
Keqin Yang ◽  
...  

2021 ◽  
Author(s):  
Zang yu

We studied the structural, electronic and optical properties of PtSe2/InSe van der Waals heterostructures (vdWh) using first principles calculations based on density functional theory (DFT). The total energies were calculated within the full-potential linearized augmented plane wave (FP-LAPW) method within the generalized gradient approximation (GGA) for the exchange-correlation potential. It is found that the PtSe2/InSe vdWh band gaps vary tunable via changing the interlayer coupling. The optical constants, including the dielectric function ε(w), the refractive index n(w) and the reflectivity R(w), are calculated for radiation energies up to 50 eV. This vdWh seem to be a potential candidate of optoelectronic devices.


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