Highly Sensitive Biosensing with Solid-State Nanopores Displaying Enzymatically Reconfigurable Rectification Properties

Nano Letters ◽  
2018 ◽  
Vol 18 (5) ◽  
pp. 3303-3310 ◽  
Author(s):  
Gonzalo Pérez-Mitta ◽  
Ana S. Peinetti ◽  
M. Lorena Cortez ◽  
María Eugenia Toimil-Molares ◽  
Christina Trautmann ◽  
...  
Keyword(s):  
Solid State ◽  
Highly Sensitive

Bi-Crystal Compensation Method for the Over-Response of Solid-State Dosimetry

2014 ◽  
Vol 605 ◽  
pp. 540-543 ◽  
Author(s):  
Ruo Xi Wang ◽  
Patrick Pittet ◽  
Julien Ribouton ◽  
Guo Neng Lu ◽  
Jean Marc Galvan ◽  
...  
Keyword(s):  
Solid State ◽  
Measured Data ◽  
Compensation Method ◽  
Low Energy ◽  
Field Size ◽  
Reference Curve ◽  
Pencil Beam ◽  
Dose Ratio ◽  
Highly Sensitive

Solid-state dosimetry employs highly sensitive semiconductors such as Gallium Nitride (GaN) and Silicon (Si), but they have a common drawback of over response compared to tissues for low-energy scattered photons, which induces inacceptable errors for radiotherapy application. To tackle this issue, we propose a compensation method consisting in using two different materials of dosimetric interest with different atomic numbers. Their responses are denoted as SC1 and SC2. The response ratio SC1/water as a function of the ratio SC1/SC2 exhibits a monotonic curve that can serve as reference to compensate the over-response of SC1. To validate this method, we have studied the dosimetric response of GaN (0.1 mm3) and Si crystals (2.5 mm3) by simulations, using a validated model based on the general cavity theory in a homogeneous water phantom. The dosimetric response of GaN and Si calculated using the model has errors within 2.5% compared to measured data. The local fluence spectra have been obtained by convolution of pencil beam kernel built by Monte Carlo simulations for different clinical irradiation conditions with field size (from 5×5 cm2up to 20×20 cm2) at depth in the phantom (from 2 cm to 25 cm). The obtained results confirm a monotone relationship between GaN/water dose ratio and GaN/Si dose ratio. The reference curve is independent of irradiation conditions (field size, dosimeter position...), and allows determination of compensation value by identification.

scholarly journals Dielectric properties of the BaTi0.85Zr0.15O3 ceramics prepared by different techniques

2008 ◽  
Vol 2 (2) ◽  
pp. 81-88 ◽  
Author(s):  
Petronela Curecheriu ◽  
Raluca Frunza ◽  
Adelina Ianculescu
Keyword(s):  
Dielectric Properties ◽  
Solid State ◽  
Dielectric Relaxation ◽  
Solid State Reaction ◽  
Precipitation Method ◽  
Relaxation Phenomena ◽  
Solid State Reaction Technique ◽  
Highly Sensitive ◽  
Preparation Route ◽  
Oxalate Route

Three different processing routes, i.e. the classical solid state reaction technique the sol-precipitation method and the oxalate route, were employed for preparing BaTi0.85Zr0.15O3 ceramics. The dielectric properties of these ceramics are comparatively analyzed. The obtained results show that the dielectric properties of these ceramics, even having the same composition, are highly sensitive to the preparation route, causing differences in the microstructures and in the local electrical inhomogeneity, thus, causing complicated dielectric relaxation phenomena.

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