Quantitative Imaging of Defect Distributions in CdZnTe Wafers Using Combined Deep-Level Photothermal Spectroscopy, Photocarrier Radiometry, and Lock-In Carrierography

2021 ◽  
Author(s):  
Alexander Melnikov ◽  
Andreas Mandelis ◽  
Akshit Soral ◽  
Claudia Zavala-Lugo ◽  
Michal Pawlak
Keyword(s):  
Deep Level ◽  
Quantitative Imaging ◽  
Photocarrier Radiometry ◽  
Photothermal Spectroscopy ◽  
Lock In

Annealing effect on the nonradiative carrier recombination in AlGaAs/GaAs investigated by a piezoelectric photothermal spectroscopy

2001 ◽  
Vol 692 ◽  
Author(s):  
Atsuhiko Fukuyama ◽  
Hiroaki Nagatomo ◽  
Yoshito Akashi ◽  
Tetsuo Ikari
Keyword(s):  
Deep Level ◽  
Band Gap Energy ◽  
Frequency Region ◽  
Annealing Effect ◽  
Photothermal Spectroscopy ◽  
Hetero Structure ◽  
Gap Energy ◽  
Carrier Recombination ◽  
Layer Region ◽  
Lower Frequency Region

AbstractElectron non-radiative recombination process of photoexcited carriers in as-grown and annealed n-Al0.2Ga0.8As/GaAs hetero-structure samples are investigated by using a piezoelectric photothermal spectroscopy (PPTS). The PPT signal above the band-gap energy of GaAs substrate decreased when the sample was annealed at 815°C. In the frequency dependent measurements, the deviations from 1/f linear function are clearly observed in the AlGaAs/GaAs samples. This critical deviation frequency was found to shift to the lower frequency region by annealing. Our experimental results are explained by assuming that the sample annealing generates an unknown deep level in AlGaAs epitaxial layer region and this level effectively traps the photoexcited carriers non-radiatively.

Quantitative imaging of shunts in organic photovoltaic modules using lock-in thermography

2014 ◽  
Vol 124 ◽  
pp. 133-137 ◽  
Author(s):  
S. Besold ◽  
U. Hoyer ◽  
J. Bachmann ◽  
Th. Swonke ◽  
P. Schilinsky ◽  
...  
Keyword(s):  
Quantitative Imaging ◽  
Organic Photovoltaic ◽  
Photovoltaic Modules ◽  
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