High-Mobility Field-Effect Transistor Using 2-Dimensional Electron Gas at the LaScO3/BaSnO3 Interface
1986 ◽
Vol 33
(5)
◽
pp. 707-711
◽
1986 ◽
pp. 238-251
◽
1984 ◽
Vol 23
(Part 2, No. 3)
◽
pp. L150-L152
◽
2010 ◽
Vol 55
(11)
◽
pp. 1285-1294
◽