Enhanced Thermoelectric Performance and Electronic Transport Properties of Ag-Doped Cu2–xS0.5Se0.5

Author(s):  
Xingchen Shen ◽  
Yung-Hsiang Tung ◽  
Chun-Chuen Yang ◽  
Allen Benton ◽  
Chenxiao Lin ◽  
...  
2015 ◽  
Vol 3 (2) ◽  
pp. 648-655 ◽  
Author(s):  
Satya N. Guin ◽  
Velaga Srihari ◽  
Kanishka Biswas

Halide ion (Cl−/Br−/I−) aliovalently dopes on the Se2−sublattice and contributes one n-type carrier in AgBiSe2, which gives rise to improved electronic transport properties. A peakZT, value of ∼0.9 at ∼810 K has been achieved for the AgBiSe1.98Cl0.02sample, which makes it a promising n-type thermoelectric material for mid-temperature applications.


2021 ◽  
Vol 59 (1) ◽  
pp. 54-60
Author(s):  
Sang-il Kim ◽  
Jong-Chan Lim ◽  
Heesun Yang ◽  
Hyun-Sik Kim

Using thermoelectric refrigerators can address climate change because they do not utilize harmful greenhouse gases as refrigerants. To compete with current vapor compression cycle refrigerators, the thermoelectric performance of materials needs to be improved. However, improving thermoelectric performance is challenging because of the trade-off relationship between the Seebeck coefficient and electrical conductivity. Here, we demonstrate that decreasing conductivity effective mass by engineering the shape of the Fermi surface pocket (non-parabolicity factor) can decouple electrical conductivity from the Seebeck coefficient. The effect of engineering the non-parabolicity factor was shown by calculating the electronic transport properties of a state-of-the-art Bi-Sb-Te ingot via two-band model with varying non-parabolicity. The power factor (the product of the Seebeck coefficient squared and electrical conductivity) was calculated to be improved because of enhanced electrical conductivity, with an approximately constant Seebeck coefficient, using a non-parabolicity factor other than unity. Engineering the non-parabolicity factor to achieve lighter conductivity effective mass can improve the electronic transport properties of thermoelectric materials because it only improves electrical conductivity without decreasing the Seebeck coefficient (which is directly proportional to the band mass of a single Fermi surface pocket and not to the conductivity effective mass). Theoretically, it is demonstrated that a thermoelectric figure-of-merit <i>zT</i> higher than 1.3 can be achieved with a Bi-Sb-Te ingot if the non-parabolicity factor is engineered to be 0.2. Engineering the non-parabolicity factor is another effective band engineering approach, similar to band convergence, to achieve an effective improvement in power factor.


2018 ◽  
Vol 6 (28) ◽  
pp. 7594-7603 ◽  
Author(s):  
Jian-Bo Li ◽  
Jun Wang ◽  
Jing-Feng Li ◽  
Yan Li ◽  
He Yang ◽  
...  

Strontium titanate (SrTiO3) is a promising n-type thermoelectric material at high temperature.


2018 ◽  
Author(s):  
Shenqiu Mo ◽  
Dengke Ma ◽  
Lina Yang ◽  
Meng An ◽  
Zhiyu Liu ◽  
...  

Author(s):  
H. H. Huang ◽  
Xiaofeng Fan ◽  
Wei Tao Zheng ◽  
David J. Singh

Layered semiconducting Ge4Se3Te shows unusual bonding that suggests the possibility of unusual transport that may be favorable for thermoelectrics. We investigated the electronic transport properties in relation to thermoelectricity of...


2021 ◽  
Vol 20 (2) ◽  
pp. 798-804
Author(s):  
G. R. Berdiyorov ◽  
F. Boltayev ◽  
G. Eshonqulov ◽  
H. Hamoudi

AbstractThe effect of zinc and oxygen vacancy defects on the electronic transport properties of Ag(100)–ZnO(100)–Pt(100) sandwich structures is studied using density functional theory in combination with the nonequilibrium Green’s functional formalism. Defect-free systems show clear current rectification due to voltage dependent charge localization in the system as revealed in our transmission eigenstates analysis. Regardless of the location, oxygen vacancies result in enhanced current in the system, whereas Zn vacancy defects reduce the charge transport across the junction. The current rectification becomes less pronounced in the presence of both types of vacancy defects. Our findings can be of practical importance for developing metal-insulator-metal diodes.


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