Two-Dimensional to Three-Dimensional Growth of Transition Metal Diselenides by Chemical Vapor Deposition: Interplay between Fractal, Dendritic, and Compact Morphologies

2020 ◽  
Vol 12 (13) ◽  
pp. 15885-15892
Author(s):  
Sayema Chowdhury ◽  
Anupam Roy ◽  
Isaac Bodemann ◽  
Sanjay K. Banerjee
1988 ◽  
Vol 116 ◽  
Author(s):  
R.A. Rudder ◽  
S.V. Hattangady ◽  
D.J. Vitkavage ◽  
R.J. Markunas

Heteroepitaxial growth of Ge on Si(100) has been accomplished using remote plasma enhanced chemical vapor deposition at 300*#x00B0;C. Reconstructed surfaces with diffraction patterns showing non-uniform intensity variations along the lengths of the integral order streaks are observed during the first 100 Å of deposit. This observation of an atomically rough surface during the initial stages of growth is an indication of three-dimensional growth. As the epitaxial growth proceeds, the diffraction patterns become uniform with extensive streaking on both the integral and fractional order streaks. Subsequent growth, therefore, takes place in a layer-by-layer, two-dimensional mode. X-ray photoelectron spectroscopy of the early nucleation stages, less than 80 Å, show that there is uniform coverage with no evidence of island formation.


2020 ◽  
Vol 49 (30) ◽  
pp. 10319-10327 ◽  
Author(s):  
Chunyu Xie ◽  
Pengfei Yang ◽  
Yahuan Huan ◽  
Fangfang Cui ◽  
Yanfeng Zhang

This Frontier highlights the roles of added salts in the chemical vapor deposition synthesis of two-dimensional transition metal dichalcogenides.


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