CdSe/CdMnS Nanoplatelets with Bilayer Core and Magnetically Doped Shell Exhibit Switchable Excitonic Circular Polarization: Implications for Lasers and Light-Emitting Diodes

We report the room-temperature electroluminescence (EL) with nearly pure circular polarization (CP) from GaAs-based spin-polarized light-emitting diodes (spin-LEDs). External magnetic fields are not used during device operation. There are two small schemes in the tested spin-LEDs: first, the stripe-laser-like structure that helps intensify the EL light at the cleaved side walls below the spin injector Fe slab, and second, the crystalline AlOxspin-tunnel barrier that ensures electrically stable device operation. The purity of CP is depressively low in the low current density (J) region, whereas it increases steeply and reaches close to the pure CP whenJ> 100 A/cm2. There, either right- or left-handed CP component is significantly suppressed depending on the direction of magnetization of the spin injector. Spin-dependent reabsorption, spin-induced birefringence, and optical spin-axis conversion are suggested to account for the observed experimental results.

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Enhancing the Circular Polarization of Spin Light-Emitting Diodes by Processing in Selenium Vapor

Technical Physics Letters ◽

10.1134/s1063785019030064 ◽

2019 ◽

Vol 45 (3) ◽

pp. 235-238 ◽

Cited By ~ 1

Author(s):

M. V. Dorokhin ◽

P. B. Demina ◽

A. V. Budanov ◽

Yu. N. Vlasov ◽

G. I. Kotov ◽

...

Keyword(s):

Circular Polarization ◽

Light Emitting Diodes ◽

Light Emitting ◽

Selenium Vapor

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Temperature dependence of the circular polarization of electroluminescence from spin-polarized light-emitting diodes based on InGaAs/GaAs heterostructures

Journal of Surface Investigation X-ray Synchrotron and Neutron Techniques ◽

10.1134/s1027451014030033 ◽

2014 ◽

Vol 8 (3) ◽

pp. 433-439

Author(s):

M. V. Dorokhin ◽

E. I. Malysheva ◽

Yu. A. Danilov ◽

A. V. Zdoroveishchev ◽

A. V. Rykov ◽

...

Keyword(s):

Temperature Dependence ◽

Circular Polarization ◽

Light Emitting Diodes ◽

Polarized Light ◽

Light Emitting ◽

Spin Polarized

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Повышение степени циркулярной поляризации спиновых светоизлучающих диодов путем обработки в парах селена

Письма в журнал технической физики ◽

10.21883/pjtf.2019.05.47400.17588 ◽

2019 ◽

Vol 45 (5) ◽

pp. 52

Author(s):

М.В. Дорохин ◽

П.Б. Дёмина ◽

А.В. Буданов ◽

Ю.Н. Власов ◽

Г.И. Котов ◽

...

Keyword(s):

Circular Polarization ◽

Spin Relaxation ◽

Light Emitting Diodes ◽

Surface Passivation ◽

Polarization Degree ◽

Surface Electron ◽

Semiconductor Interface ◽

Electron States ◽

Light Emitting ◽

Selenium Vapor

AbstractSpin light-emitting diodes based on InGaAs/GaAs heterostructures with a CoPt ferromagnetic injector were fabricated. It was demonstrated that the processing of these structures in selenium vapor prior to the deposition of a CoPt contact provides an opportunity to enhance the circular polarization degree of diode emission. The observed increase in the polarization degree is attributed to the suppression of spin relaxation at the metal/semiconductor interface due to surface passivation and a reduction in the density of surface electron states as a result of processing in selenium vapor.

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Fabrication and Study of Spin Light-Emitting Nanoheterostructures on the Basis of III-V Semiconductors

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.168-169.55 ◽

2010 ◽

Vol 168-169 ◽

pp. 55-58

Author(s):

Y.A. Danilov ◽

Y.N. Drozdov ◽

M.V. Dorokhin ◽

V.D. Kulakovskii ◽

M.M. Prokof’eva ◽

...

Keyword(s):

Quantum Well ◽

Exchange Interaction ◽

Circular Polarization ◽

Light Emitting Diodes ◽

Polarization Degree ◽

Light Emitting ◽

Circularly Polarized ◽

Delta Layer

Circularly polarized electroluminescence from light-emitting diodes based on InGaAs/GaAs heterostructures with adjacent ferromagnetic delta<Mn>-doped layer has been investigated. It was found that delta<Mn>-layer placed near (at 2-10 nm) the quantum well (QW) causes circular polarization of its electroluminescence due to an s,p-d exchange interaction between holes in the quantum well and Mn ions in the delta-layer. The dependence of circular polarization degree on main technology parameters is discussed.

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