Low-threshold pure-circular polarization electro-luminescence from spin-light-emitting diodes consisting of oxidized Al/AlAs tunneling barriers

Author(s):  
Hiro Munekata
2015 ◽  
Vol 107 (4) ◽  
pp. 042406 ◽  
Author(s):  
M. V. Dorokhin ◽  
Yu. A. Danilov ◽  
B. N. Zvonkov ◽  
M. A. Gonzalez Balanta ◽  
M. J. S. P. Brasil ◽  
...  

2019 ◽  
Vol 12 (12) ◽  
pp. 123005 ◽  
Author(s):  
Yaping Wu ◽  
Jiajun Chen ◽  
Jiangpeng Zhou ◽  
Jinshen Lan ◽  
Hao Zeng ◽  
...  

2017 ◽  
Vol 59 (11) ◽  
pp. 2162-2167 ◽  
Author(s):  
E. I. Malysheva ◽  
M. V. Dorokhin ◽  
P. B. Demina ◽  
A. V. Zdoroveyshchev ◽  
A. V. Rykov ◽  
...  

2017 ◽  
Vol 114 (8) ◽  
pp. 1783-1788 ◽  
Author(s):  
Nozomi Nishizawa ◽  
Kazuhiro Nishibayashi ◽  
Hiro Munekata

We report the room-temperature electroluminescence (EL) with nearly pure circular polarization (CP) from GaAs-based spin-polarized light-emitting diodes (spin-LEDs). External magnetic fields are not used during device operation. There are two small schemes in the tested spin-LEDs: first, the stripe-laser-like structure that helps intensify the EL light at the cleaved side walls below the spin injector Fe slab, and second, the crystalline AlOxspin-tunnel barrier that ensures electrically stable device operation. The purity of CP is depressively low in the low current density (J) region, whereas it increases steeply and reaches close to the pure CP whenJ> 100 A/cm2. There, either right- or left-handed CP component is significantly suppressed depending on the direction of magnetization of the spin injector. Spin-dependent reabsorption, spin-induced birefringence, and optical spin-axis conversion are suggested to account for the observed experimental results.


Sign in / Sign up

Export Citation Format

Share Document