Vapor Phase Infiltration Doping of the Semiconducting Polymer Poly(aniline) with TiCl4 + H2O: Mechanisms, Reaction Kinetics, and Electrical and Optical Properties

Semiconducting Polymer ◽

Poly Aniline

Improvement of electrical and optical properties of ZnSSe p-n heterostructure diodes with optimization in metalorganic vapor phase epitaxy

Journal of Crystal Growth ◽

10.1016/0022-0248(94)90901-6 ◽

1994 ◽

Vol 138 (1-4) ◽

pp. 750-754 ◽

Cited By ~ 2

Author(s):

I. Suemune ◽

Y. Fujii ◽

M. Fujimoto

Keyword(s):

Optical Properties ◽

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

Impact of in situ SiN[sub x] layer grown with metal organic vapor phase epitaxy on the electrical and optical properties of AlN/GaN metal insulator semiconductor field effect transistor structures

10.1116/1.3186615 ◽

2009 ◽

Vol 27 (5) ◽

pp. 2079 ◽

Cited By ~ 10

Author(s):

E. Cho ◽

S. Seo ◽

C. Jin ◽

D. Pavlidis ◽

G. Fu ◽

...

Keyword(s):

Optical Properties ◽

Vapor Phase ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Insulator ◽

Organic Vapor ◽

Metal Organic ◽

Effect Transistor

Morphological, electrical, and optical properties of InN grown by hydride vapor phase epitaxy on sapphire and template substrates

Journal of Applied Physics ◽

10.1063/1.2201856 ◽

2006 ◽

Vol 99 (11) ◽

pp. 116103 ◽

Cited By ~ 7

Author(s):

D. Y. Song ◽

V. Kuryatkov ◽

M. Basavaraj ◽

D. Rosenbladt ◽

S. A. Nikishin ◽

...

Keyword(s):

Optical Properties ◽

Vapor Phase ◽

Vapor Phase Epitaxy ◽

Comparison of Defects in Hydride Vapor Phase Epitaxy-Grown GaN Films under Different V/III Ratios and the Influence on the Electrical and Optical Properties

International Journal of Electrochemical Science ◽

10.20964/2020.12.33 ◽

2020 ◽

pp. 12682-12689

Author(s):

Y Tian ◽

Keyword(s):

Optical Properties ◽

Vapor Phase ◽

Vapor Phase Epitaxy ◽

The influence of oxygen on the electrical and optical properties of GaN crystals grown by metalorganic vapor phase epitaxy

Journal of Applied Physics ◽

10.1063/1.351848 ◽

1992 ◽

Vol 72 (2) ◽

pp. 651-659 ◽

Cited By ~ 254

Author(s):

B‐C. Chung ◽

M. Gershenzon

Keyword(s):

Optical Properties ◽

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Investigation of the electrical and optical properties of organometallic vapor-phase epitaxial Ga/sub 1-x/Al/sub x/As and Ga/sub 1-x/Al/sub x/As/GaAs in solar cells. Progress report, 16 June 1981-15 December 1981

10.2172/5594390 ◽

1981 ◽

Author(s):

P. K. Bhattacharya

Keyword(s):

Optical Properties ◽

Solar Cells ◽

Vapor Phase ◽

Progress Report ◽

Structural, electrical, and optical properties of defects in Si-doped GaN grown by molecular-beam epitaxy on hydride vapor phase epitaxy GaN on sapphire

Journal of Applied Physics ◽

10.1063/1.1488241 ◽

2002 ◽

Vol 92 (2) ◽

pp. 786-792 ◽

Cited By ~ 22

Author(s):

P. Laukkanen ◽

S. Lehkonen ◽

P. Uusimaa ◽

M. Pessa ◽

J. Oila ◽

...

Keyword(s):

Optical Properties ◽

Molecular Beam Epitaxy ◽

Vapor Phase ◽

Molecular Beam ◽

Vapor Phase Epitaxy ◽

Si Doped

Electrical and Optical Properties of V[sub 2]O[sub 5] Micro-Nano Structures Grown by Direct Vapor Phase Deposition Method

Journal of The Electrochemical Society ◽

10.1149/1.2840469 ◽

2008 ◽

Vol 155 (4) ◽

pp. K84 ◽

Cited By ~ 8

Author(s):

Nilima V. Hullavarad ◽

Shiva S. Hullavarad ◽

Pramod C. Karulkar

Keyword(s):

Optical Properties ◽

Vapor Phase ◽

Deposition Method ◽

Vapor Phase Deposition ◽

Nano Structures

Electrical and optical properties of InP grown by metalorganic vapor phase epitaxy with extremely low V/III ratios using tertiarybutylphosphine

Applied Physics Letters ◽

10.1063/1.108554 ◽

1993 ◽

Vol 62 (8) ◽

pp. 882-884 ◽

Cited By ~ 10

Author(s):

M. Horita ◽

M. Suzuki ◽

Y. Matsushima

Keyword(s):

Optical Properties ◽

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

Electrical and optical properties of hydrogen plasma treated n-AlGaN films grown by hydride vapor phase epitaxy

10.1116/1.1640395 ◽

2004 ◽

Vol 22 (1) ◽

pp. 77 ◽

Cited By ~ 5

Author(s):

A. Y. Polyakov ◽

N. B. Smirnov ◽

A. V. Govorkov ◽

N. V. Pashkova ◽

A. A. Shlensky ◽

...

Keyword(s):

Optical Properties ◽

Vapor Phase ◽

Hydrogen Plasma ◽

Vapor Phase Epitaxy ◽