Indirect to Direct Band Gap Transformation by Surface Engineering in Semiconductor Nanostructures

ACS Nano ◽  
2021 ◽  
Author(s):  
Marco Califano ◽  
Ruiyan Lu ◽  
Yeke Zhou
2013 ◽  
Vol 652-654 ◽  
pp. 527-531 ◽  
Author(s):  
A.N. Alias ◽  
T.I. Tunku Kudin ◽  
Z.M. Zabidi ◽  
M.K. Harun ◽  
Ab Malik Marwan Ali ◽  
...  

The optical absorption spectra of blended poly (N-carbazole) (PVK) with polyvinylpyrrolidone (PVP) in various compositions are investigated. A doctor blade technique was used to coat the blended polymer on a quartz substrate. The electronic parameters such as absorption edge (Ee), allowed direct band gap (Ed), allowed indirect band gap (Ei), Urbach edge (Eu) and steepness parameter (γ) were calculated using Tauc/Davis-Mott Model. The results reveal that the Ee, Ed and Ei increase with increasing of PVP ratio. There also have variation changing in Urbach energy and steepness parameter.


2014 ◽  
Vol 44 (1) ◽  
pp. 167-176 ◽  
Author(s):  
Adit Ghosh ◽  
Chandrika Varadachari
Keyword(s):  
Band Gap ◽  

2015 ◽  
Vol 54 (10) ◽  
pp. 3112-3115 ◽  
Author(s):  
Shengli Zhang ◽  
Zhong Yan ◽  
Yafei Li ◽  
Zhongfang Chen ◽  
Haibo Zeng
Keyword(s):  
Band Gap ◽  

RSC Advances ◽  
2015 ◽  
Vol 5 (102) ◽  
pp. 83876-83879 ◽  
Author(s):  
Chengyong Xu ◽  
Paul A. Brown ◽  
Kevin L. Shuford

We have investigated the effect of uniform plane strain on the electronic properties of monolayer 1T-TiS2using first-principles calculations. With the appropriate tensile strain, the material properties can be transformed from a semimetal to a direct band gap semiconductor.


2014 ◽  
Vol 104 (3) ◽  
pp. 031106 ◽  
Author(s):  
Masahiro Matsue ◽  
Yuhsuke Yasutake ◽  
Susumu Fukatsu ◽  
Takuji Hosoi ◽  
Takayoshi Shimura ◽  
...  

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