Laterally Stitched Heterostructures of Transition Metal Dichalcogenide: Chemical Vapor Deposition Growth on Lithographically Patterned Area

ACS Nano ◽  
2016 ◽  
Vol 10 (11) ◽  
pp. 10516-10523 ◽  
Author(s):  
Henan Li ◽  
Peng Li ◽  
Jing-Kai Huang ◽  
Ming-Yang Li ◽  
Chih-Wen Yang ◽  
...  
2016 ◽  
Vol 52 (50) ◽  
pp. 7878-7881 ◽  
Author(s):  
Naktal Al-Dulaimi ◽  
Edward A. Lewis ◽  
David J. Lewis ◽  
Simon K. Howell ◽  
Sarah J. Haigh ◽  
...  

Bottom-up (aerosol-assisted chemical vapor deposition, AACVD) and top-down (liquid phase exfoliation, LPE) processing methodologies are used in tandem to produce colloids of few-layer thick rhenium disulfide (ReS2) in N-methyl pyrrolidone.


Nanoscale ◽  
2017 ◽  
Vol 9 (32) ◽  
pp. 11584-11589 ◽  
Author(s):  
Xinlan Wang ◽  
Qinghong Yuan ◽  
Jia Li ◽  
Feng Ding

The catalytic activities of various catalysts are found to be responsible for the shape evolution of graphene domains during CVD growth.


ACS Nano ◽  
2016 ◽  
Vol 10 (4) ◽  
pp. 4330-4344 ◽  
Author(s):  
Ananth Govind Rajan ◽  
Jamie H. Warner ◽  
Daniel Blankschtein ◽  
Michael S. Strano

Nanoscale ◽  
2017 ◽  
Vol 9 (43) ◽  
pp. 16607-16611 ◽  
Author(s):  
Xinsheng Wang ◽  
Junhao Lin ◽  
Yiming Zhu ◽  
Chen Luo ◽  
Kazutomo Suenaga ◽  
...  

Controlled synthesis of group VB transition-metal dichalcogenide monolayers and few-layers with defined coordination and stacking is the key to the property investigation and device applications.


Nanoscale ◽  
2015 ◽  
Vol 7 (5) ◽  
pp. 1627-1634 ◽  
Author(s):  
Haibo Shu ◽  
Xiao-Ming Tao ◽  
Feng Ding

Surface active carbon species depend on the type of metal substrates during graphene chemical vapor deposition, which implies different growth modes of graphene on the transition-metal surfaces.


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