scholarly journals Computational Appraisal of Silver Nanocluster Evolution on Epitaxial Graphene: Implications for CO Sensing

ACS Omega ◽  
2021 ◽  
Author(s):  
Ivan Shtepliuk ◽  
Rositsa Yakimova
2020 ◽  
Vol 1695 ◽  
pp. 012018
Author(s):  
I A Eliseyev ◽  
A V Babichev ◽  
S P Lebedev ◽  
P A Dementev ◽  
A V Zubov ◽  
...  
Keyword(s):  

Author(s):  
Badriah J. Alamer ◽  
Megalamane S. Bootharaju ◽  
Sergey M. Kozlov ◽  
Zhen Cao ◽  
Aleksander Shkurenko ◽  
...  

2019 ◽  
Vol 3 (9) ◽  
Author(s):  
Markus Gruschwitz ◽  
Herbert Schletter ◽  
Steffen Schulze ◽  
Ioannis Alexandrou ◽  
Christoph Tegenkamp
Keyword(s):  

2020 ◽  
Vol 29 (5) ◽  
pp. 846-852
Author(s):  
Michael D. Pedowitz ◽  
Soaram Kim ◽  
Daniel I. Lewis ◽  
Balaadithya Uppalapati ◽  
Digangana Khan ◽  
...  

2012 ◽  
Vol 21 (9) ◽  
pp. 097304 ◽  
Author(s):  
Jia Li ◽  
Li Wang ◽  
Zhi-Hong Feng ◽  
Cui Yu ◽  
Qing-Bin Liu ◽  
...  

1997 ◽  
Vol 501 ◽  
Author(s):  
Naohisa Yanagihara ◽  
Kazutaka Uchida ◽  
Muyuki Wakabayashi ◽  
Toru Hara

ABSTRACTSolid sol of silver in poly(methyl methacrylate), Ag/PMMA, was prepared by bulk polymerization of methyl methacrylate solution of silver (I) triflluoroacetate (AgTfa) and followed by postheating. The formation of the metallic Ag nanocluster was characterized by visible spectroscopy, and effects of the concentrations of AIBN and AgTfa and the heat-treatment duration on the formation of Ag cluster were investigated. Furthermore, based on the kinetic study of MMA in the presence of AgTfa, possible mechanism for the reduction and agglomeration of silver is proposed.


2012 ◽  
Vol 717-720 ◽  
pp. 641-644
Author(s):  
Travis J. Anderson ◽  
Karl D. Hobart ◽  
Luke O. Nyakiti ◽  
Virginia D. Wheeler ◽  
Rachael L. Myers-Ward ◽  
...  

Graphene, a 2D material, has motivated significant research in the study of its in-plane charge carrier transport in order to understand and exploit its unique physical and electrical properties. The vertical graphene-semiconductor system, however, also presents opportunities for unique devices, yet there have been few attempts to understand the properties of carrier transport through the graphene sheet into an underlying substrate. In this work, we investigate the epitaxial graphene/4H-SiC system, studying both p and n-type SiC substrates with varying doping levels in order to better understand this vertical heterojunction.


2013 ◽  
Vol 103 (20) ◽  
pp. 201911 ◽  
Author(s):  
J. Kunc ◽  
Y. Hu ◽  
J. Palmer ◽  
C. Berger ◽  
W. A. de Heer

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