Complementary Charge Trapping and Ionic Migration in Resistive Switching of Rare-Earth Manganite TbMnO3

Using ion implantation different rare earth luminescent centers (Gd3+, Tb3+, Eu3+, Ce3+, Tm3+, Er3+) were formed in the silicon dioxide layer of a purpose-designed Metal Oxide Silicon (MOS) capacitor with advanced electrical performance, further called a MOS-light emitting device (MOSLED). Efficient electroluminescence was obtained for the wavelength range from UV to infrared with a transparent top electrode made of indium-tin oxide. Top values of the efficiency of 0.3 % corresponding to external quantum efficiencies distinctly above the percent range were reached. The electrical properties of these devices such as current-voltage and charge trapping characteristics, were also evaluated. Finally, application aspects to the field of biosensing will be shown.

Download Full-text

Wide Range Magnetoresistance in Rare Earth Manganite Through Substitution of Magnetic Impurity

IEEE Transactions on Magnetics ◽

10.1109/tmag.2011.2169979 ◽

2012 ◽

Vol 48 (3) ◽

pp. 1155-1158 ◽

Cited By ~ 2

Author(s):

Reena Singh ◽

Deepika Bhuwal ◽

Rashmi Yadav ◽

Subhash Khatarkar ◽

Vilas Shelke

Keyword(s):

Rare Earth ◽

Magnetic Impurity ◽

Rare Earth Manganite ◽

Wide Range

Download Full-text

Artificial Synapse Emulated by Charge Trapping-Based Resistive Switching Device

Advanced Materials Technologies ◽

10.1002/admt.201800342 ◽

2018 ◽

Vol 4 (2) ◽

pp. 1800342 ◽

Cited By ~ 21

Author(s):

Shi-Rui Zhang ◽

Li Zhou ◽

Jing-Yu Mao ◽

Yi Ren ◽

Jia-Qin Yang ◽

...

Keyword(s):

Resistive Switching ◽

Charge Trapping ◽

Switching Device ◽

Artificial Synapse

Download Full-text

Effect of Current Compliance on Resistive Switching Characteristics of Amorphous Ternary Rare Earth Oxide SmGdO3 Thin Films Grown by Pulsed Laser Deposition

ECS Meeting Abstracts ◽

10.1149/ma2014-01/37/1417 ◽

2014 ◽

Keyword(s):

Thin Films ◽

Rare Earth ◽

Pulsed Laser Deposition ◽

Resistive Switching ◽

Pulsed Laser ◽

Rare Earth Oxide ◽

Laser Deposition ◽

Current Compliance ◽

Switching Characteristics

Download Full-text

Unipolar resistive switching behavior of high-k ternary rare-earth oxide LaHoO3 thin films for non-volatile memory applications

MRS Proceedings ◽

10.1557/opl.2015.92 ◽

2015 ◽

Vol 1729 ◽

pp. 23-28 ◽

Cited By ~ 1

Author(s):

Yogesh Sharma ◽

Pankaj Misra ◽

Shojan P. Pavunny ◽

Ram S. Katiyar

Keyword(s):

Thin Films ◽

Rare Earth ◽

Resistive Switching ◽

High Resistance ◽

Rare Earth Oxide ◽

Switching Behavior ◽

Resistive Switching Behavior ◽

Device Structure ◽

Resistance State ◽

Unipolar Resistive Switching

ABSTRACTRare-earth oxides have attracted considerable research interest in resistive random access memories (ReRAMs) due to their compatibility with complementary metal-oxide semiconductor (CMOS) process. To this end we report unipolar resistive switching in a novel ternary rare-earth oxide LaHoO3 (LHO) to accelerate progress and to support advances in this emerging densely scalable research architecture. Amorphous thin films of LHO were fabricated on Pt/TiO2/SiO2/Si substrate by pulsed laser deposition, followed by sputter deposition of platinum top electrode through shadow mask in order to elucidate the resistive switching behavior of the resulting Pt/LHO/Pt metal-insulator-metal (MIM) device structure. Stable unipolar resistive switching characteristics with interesting switching parameters like, high resistance ratio of about 105 between high resistance state (HRS) and low resistance state (LRS), non-overlapping switching voltages with narrow dispersion, and excellent retention and endurance features were observed in Pt/LHO/Pt device structure. The observed resistive switching in LHO was explained by the formation/rupture of conductive filaments formed out of oxygen vacancies and metallic Ho atom. From the current-voltage characteristics of Pt/LHO/Pt structure, the conduction mechanism in LRS and HRS was found to be dominated by Ohm’s law and Poole-Frenkel emission, respectively.

Download Full-text