High-resolution electron microscopy and image simulation of TT-,T-, and H-niobia and model silica-supported niobium surface oxides

1989 ◽  
Vol 1 (2) ◽  
pp. 187-193 ◽  
Author(s):  
J. G. Weissman ◽  
Edmund I. Ko ◽  
P. Wynblatt ◽  
J. M. Howe
1999 ◽  
Vol 589 ◽  
Author(s):  
V. Potin ◽  
G. Nouet ◽  
P. Ruterana ◽  
R.C. Pond

AbstractThe studied GaN layers are made of mosaYc grains rotated around the c-axis by angles in the range 0-25°. Using high-resolution electron microscopy, anisotropic elasticity calculations and image simulation, we have analyzed the atomic structure of the edge threading dislocations. Here, we present an analysis of the Σ = 7 boundary using circuit mapping in order to define the Burgers vectors of the primary and secondary dislocations. The atomic structure of the primary ones was found to exhibit 5/7 and 8 atom cycles.


1989 ◽  
Vol 45 (2) ◽  
pp. 193-199 ◽  
Author(s):  
Z. L. Wang

Inelastic plasmon diffuse scattering (PDS) is treated as an effective position-dependent potential perturbing the incident electron wavelength in a solid surface, resulting in an extra phase grating term in the slice transmission function. This potential is derived for the geometry of reflection electron microscopy (REM) and high-resolution electron microscopy (HREM). The energy-filtered inelastic images can be calculated following the routine image simulation procedures by using different slice transmission functions for the elastic and inelastic waves, by considering the 'transitions' of the elastic scattered electrons to the inelastic scattered electrons. It is predicted that the inelastic scattering could modify the electron intensity distribution at a surface. It is possible to take high-resolution energy-filtered inelastic images of crystals, the resolution of which is about the same as that taken from the elastic scattered electrons.


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