scholarly journals Air-Exposure Induced Dopant Redistribution and Energy Level Shifts in Spin-Coated Spiro-MeOTAD Films

2015 ◽  
Vol 27 (2) ◽  
pp. 562-569 ◽  
Author(s):  
Zafer Hawash ◽  
Luis K. Ono ◽  
Sonia R. Raga ◽  
Michael V. Lee ◽  
Yabing Qi
Keyword(s):  
Energy Level ◽  
Air Exposure ◽  
Level Shifts ◽  
Dopant Redistribution

Energy Level Alignment at the Metal/Alq3 Interfaces Investigated with Photoemission Methods

2000 ◽  
Vol 660 ◽  
Author(s):  
Li Yan ◽  
C.W. Tang ◽  
M. G. Mason ◽  
Yongli Gao
Keyword(s):  
Energy Level ◽  
Work Function ◽  
Photoelectron Spectroscopy ◽  
Light Emission ◽  
Electron Injection ◽  
Core Level ◽  
Material Research ◽  
Level Shifts ◽  
Key Issues ◽  
Injection Materials

ABSTRACTTris(8-hydroxyquinoline) aluminum (Alq3) based organic light emission diodes (OLED) have been a focus of material research in recent years. One of the key issues in searching for a better device performance and fabricating conditions is suitable electron-injection materials. We have investigated the energy alignment and the interface formation between different metals and Alq3 using X-ray and ultraviolet photoelectron spectroscopy (XPS and UPS). The interface is formed by depositing the target cathode material, such as Ca, Al or Al/LiF, onto an Alq3 film in a stepwise fashion in an ultrahigh vacuum environment. While the UPS results show the work function and vacuum level changes during interfaces formation, implying a possible surface dipole layer, XPS results show a more detailed and complex behavior. When a low work function metal such as Ca is deposited onto an Alq3 surface, a gap state is observed in UPS. At the same time, a new peak can be observed in the N 1s core level at a lower binding energy. These results can be characterized as charge transfer from the low work function metal to Alq3. The shifting of core levels are also observed, which may be explained by doping from metal atoms or charge diffusion. These interfaces are drastically different than the Al/Alq3 interface, which has very poor electron injection. At the Al/Alq3 interface there is a destructive chemical reaction and much smaller core level shifts are observed. Based on detailed analysis, energy level diagrams at the interface are proposed.

Role of energy-level shifts on Auger neutralization processes: A calculation beyond the image potential

1998 ◽  
Vol 58 (11) ◽  
pp. 7385-7390 ◽  
Author(s):  
W. More ◽  
J. Merino ◽  
R. Monreal ◽  
P. Pou ◽  
F. Flores
Keyword(s):  
Energy Level ◽  
Level Shifts

The determination of energy-level shifts which accompany chemisorption

1976 ◽  
Vol 54 (2) ◽  
pp. 197-209 ◽  
Author(s):  
Homer D Hagstrum
Keyword(s):  
Energy Level ◽  
Level Shifts

scholarly journals Pronounced polarization-induced energy level shifts at boundaries of organic semiconductor nanostructures

2015 ◽  
Vol 6 (1) ◽  
Author(s):  
K. A. Cochrane ◽  
A. Schiffrin ◽  
T. S. Roussy ◽  
M. Capsoni ◽  
S. A. Burke
Keyword(s):  
Energy Level ◽  
Organic Semiconductor ◽  
Semiconductor Nanostructures ◽  
Level Shifts ◽  
Pronounced Polarization

scholarly journals A Diamond Temperature Sensor Based on the Energy Level Shift of Nitrogen-Vacancy Color Centers

Nanomaterials ◽  
2019 ◽  
Vol 9 (11) ◽  
pp. 1576 ◽  
Author(s):  
Mingyang Yang ◽  
Qilong Yuan ◽  
Jingyao Gao ◽  
Shengcheng Shu ◽  
Feiyue Chen ◽  
...  
Keyword(s):  
Energy Level ◽  
Temperature Measurement ◽  
Color Center ◽  
Environmental Temperature ◽  
Nitrogen Vacancy ◽  
Color Centers ◽  
Zero Phonon Line ◽  
Level Shifts ◽  
Nv Color Center ◽  
Nv Centers

The nitrogen-vacancy (NV) color center in chemical vapor deposition (CVD) diamond has been widely investigated in quantum information and quantum biosensors due to its excellent photon emission stability and long spin coherence time. However, the temperature dependence of the energy level of NV color centers in diamond is different from other semiconductors with the same diamond cubic structure for the high Debye temperature and very small thermal expansion coefficient of diamond. In this work, a diamond sensor for temperature measurement with high precision was fabricated based on the investigation of the energy level shifts of NV centers by Raman and photoluminescence (PL) spectra. The results show that the intensity and linewidth of the zero-phonon line of NV centers highly depend on the environmental temperature, and the energy level shifts of NV centers in diamond follow the modified Varshni model very well, a model which is better than the traditional version. Accordingly, the NV color center shows the ability in temperature measurement with a high accuracy of up to 98%. The high dependence of NV centers on environmental temperature shows the possibility of temperature monitoring of NV center-based quantum sensors in biosystems.

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