MURPHREE AWARD SYMPOSIUM—INTRODUCTION - "Catalytic Process Development"

1969 ◽  
Vol 61 (7) ◽  
pp. 5-5
ChemInform ◽  
2010 ◽  
Vol 32 (31) ◽  
pp. no-no
Author(s):  
M. P. Harold ◽  
P. L. Mills ◽  
J. F. Nicole

Author(s):  
P. B. Basham ◽  
H. L. Tsai

The use of transmission electron microscopy (TEM) to support process development of advanced microelectronic devices is often challenged by a large amount of samples submitted from wafer fabrication areas and specific-spot analysis. Improving the TEM sample preparation techniques for a fast turnaround time is critical in order to provide a timely support for customers and improve the utilization of TEM. For the specific-area sample preparation, a technique which can be easily prepared with the least amount of effort is preferred. For these reasons, we have developed several techniques which have greatly facilitated the TEM sample preparation.For specific-area analysis, the use of a copper grid with a small hole is found to be very useful. With this small-hole grid technique, TEM sample preparation can be proceeded by well-established conventional methods. The sample is first polished to the area of interest, which is then carefully positioned inside the hole. This polished side is placed against the grid by epoxy Fig. 1 is an optical image of a TEM cross-section after dimpling to light transmission.


Author(s):  
C.K. Wu ◽  
P. Chang ◽  
N. Godinho

Recently, the use of refractory metal silicides as low resistivity, high temperature and high oxidation resistance gate materials in large scale integrated circuits (LSI) has become an important approach in advanced MOS process development (1). This research is a systematic study on the structure and properties of molybdenum silicide thin film and its applicability to high performance LSI fabrication.


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