Infrared laser single photon absorption reaction chemistry in the solid state. Reactions of nitrogen oxides with sulfur hexafluoride

1980 ◽  
Vol 84 (13) ◽  
pp. 1686-1694 ◽  
Author(s):  
Edward Catalano ◽  
Robert E. Barletta
Keyword(s):  
Solid State ◽  
Nitrogen Oxides ◽  
Sulfur Hexafluoride ◽  
Single Photon ◽  
Infrared Laser ◽  
Photon Absorption ◽  
Solid State Reactions ◽  
Single Photon Absorption

Infrared laser single photon absorption reaction chemistry in the solid state. I. The system SiH4–UF6 a)

1979 ◽  
Vol 70 (7) ◽  
pp. 3291-3299 ◽  
Author(s):  
Edward Catalano ◽  
Robert E. Barlettab) ◽  
Richard K. Pearson
Keyword(s):  
Solid State ◽  
Single Photon ◽  
Infrared Laser ◽  
Photon Absorption ◽  
Single Photon Absorption

Single‐photon‐absorption reaction chemistry in the solid state

1977 ◽  
Vol 66 (10) ◽  
pp. 4706-4707 ◽  
Author(s):  
Edward Catalano ◽  
Robert E. Barletta
Keyword(s):  
Solid State ◽  
Single Photon ◽  
Photon Absorption ◽  
Single Photon Absorption

scholarly journals Determination of 4H-SiC Ionization Rates Using OBIC Based on Two-Photon Absorption

2016 ◽  
Vol 858 ◽  
pp. 245-248 ◽  
Author(s):  
Hassan Hamad ◽  
Christophe Raynaud ◽  
Pascal Bevilacqua ◽  
Sigo Scharnholz ◽  
Bertrand Vergne ◽  
...  
Keyword(s):  
Single Photon ◽  
Green Laser ◽  
Photon Absorption ◽  
Absorption Process ◽  
Field Range ◽  
Two Photon Absorption ◽  
Two Photon ◽  
Avalanche Diodes ◽  
Single Photon Absorption ◽  
Ionization Rates

Optical Beam Induced Current (OBIC) measurements are performed on 4H-SiC avalanche diodes with a very thin and a highly doped active region. A pulsed green laser, with a wavelength of 532 nm, illuminates a reverse biased diode leading to generate electron-hole pairs in the space charge region. Comparison between the 4H-SiC bandgap and the incident photon energy shows that single photon absorption process can be neglected and two-photon absorption process dominates in this case. Ionization rates are then extracted from multiplication curve in a high electric field range (3 to 5 MV.cm–1). Results are in good agreement with previous ones obtained on the same diodes using single photon absorption process.

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