Single photon absorption laser facility for single event effect testing

2016 ◽  
Author(s):  
Michael Newton ◽  
Brook Danger ◽  
Li Chen ◽  
Ramaswami Sammynaiken ◽  
Haibin Wang ◽  
...  
Keyword(s):  
Single Photon ◽  
Photon Absorption ◽  
Single Event ◽  
Single Event Effect ◽  
Laser Facility ◽  
Single Photon Absorption

Two Photon Absorption Laser Facility for Single Event Effect Testing

2016 ◽  
Author(s):  
Michael Newton ◽  
Brook Danger ◽  
Haibin Wang ◽  
Li Chen ◽  
David M. Hiemstra ◽  
...  
Keyword(s):  
Photon Absorption ◽  
Single Event ◽  
Two Photon Absorption ◽  
Two Photon ◽  
Single Event Effect ◽  
Laser Facility

Spatial Mapping of Pristine and Irradiated AlGaN/GaN HEMTs With UV Single-Photon Absorption Single-Event Transient Technique

2016 ◽  
Vol 63 (4) ◽  
pp. 1995-2001 ◽  
Author(s):  
Ani Khachatrian ◽  
Nicolas J-H. Roche ◽  
Stephen P. Buchner ◽  
Andrew D. Koehler ◽  
Jordan D. Greenlee ◽  
...  
Keyword(s):  
Single Photon ◽  
Photon Absorption ◽  
Spatial Mapping ◽  
Single Event ◽  
Single Event Transient ◽  
Transient Technique ◽  
Gan Hemts ◽  
Single Photon Absorption

scholarly journals Determination of 4H-SiC Ionization Rates Using OBIC Based on Two-Photon Absorption

2016 ◽  
Vol 858 ◽  
pp. 245-248 ◽  
Author(s):  
Hassan Hamad ◽  
Christophe Raynaud ◽  
Pascal Bevilacqua ◽  
Sigo Scharnholz ◽  
Bertrand Vergne ◽  
...  
Keyword(s):  
Single Photon ◽  
Green Laser ◽  
Photon Absorption ◽  
Absorption Process ◽  
Field Range ◽  
Two Photon Absorption ◽  
Two Photon ◽  
Avalanche Diodes ◽  
Single Photon Absorption ◽  
Ionization Rates

Optical Beam Induced Current (OBIC) measurements are performed on 4H-SiC avalanche diodes with a very thin and a highly doped active region. A pulsed green laser, with a wavelength of 532 nm, illuminates a reverse biased diode leading to generate electron-hole pairs in the space charge region. Comparison between the 4H-SiC bandgap and the incident photon energy shows that single photon absorption process can be neglected and two-photon absorption process dominates in this case. Ionization rates are then extracted from multiplication curve in a high electric field range (3 to 5 MV.cm–1). Results are in good agreement with previous ones obtained on the same diodes using single photon absorption process.

Infrared laser single photon absorption reaction chemistry in the solid state. I. The system SiH4–UF6 a)

1979 ◽  
Vol 70 (7) ◽  
pp. 3291-3299 ◽  
Author(s):  
Edward Catalano ◽  
Robert E. Barlettab) ◽  
Richard K. Pearson
Keyword(s):  
Solid State ◽  
Single Photon ◽  
Infrared Laser ◽  
Photon Absorption ◽  
Single Photon Absorption
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