Chemical Modeling of the Oxygen-Evolving Center in Plants. Synthesis, Structure, and Electronic and Redox Properties of a New Mixed Valence Mn−Oxo Cluster:  [Mn2III,IVO2(bisimMe2en)2]3+(bisimMe2en =N,N‘-Dimethyl-N,N‘-bis(imidazol-4-ylmethyl)ethane-1,2-diamine). EPR Detection of an Imidazole Radical Induced by UV Irradiation at Low Temperature

1996 ◽  
Vol 118 (11) ◽  
pp. 2669-2678 ◽  
Author(s):  
Yves-Michel Frapart ◽  
Alain Boussac ◽  
Rolf Albach ◽  
Elodie Anxolabéhère-Mallart ◽  
Michel Delroisse ◽  
...  
2015 ◽  
Vol 112 (13) ◽  
pp. 3979-3984 ◽  
Author(s):  
Xichen Li ◽  
Per E. M. Siegbahn ◽  
Ulf Ryde

Most of the main features of water oxidation in photosystem II are now well understood, including the mechanism for O–O bond formation. For the intermediate S2 and S3 structures there is also nearly complete agreement between quantum chemical modeling and experiments. Given the present high degree of consensus for these structures, it is of high interest to go back to previous suggestions concerning what happens in the S2–S3 transition. Analyses of extended X-ray adsorption fine structure (EXAFS) experiments have indicated relatively large structural changes in this transition, with changes of distances sometimes larger than 0.3 Å and a change of topology. In contrast, our previous density functional theory (DFT)(B3LYP) calculations on a cluster model showed very small changes, less than 0.1 Å. It is here found that the DFT structures are also consistent with the EXAFS spectra for the S2 and S3 states within normal errors of DFT. The analysis suggests that there are severe problems in interpreting EXAFS spectra for these complicated systems.


2003 ◽  
Vol 119 (3) ◽  
pp. 376-383 ◽  
Author(s):  
Alexander G. Ivanov ◽  
Prafullachandra Sane ◽  
Vaughan Hurry ◽  
Marianna Król ◽  
Dimitry Sveshnikov ◽  
...  

Micromachines ◽  
2019 ◽  
Vol 10 (5) ◽  
pp. 338 ◽  
Author(s):  
Lucio Bonaccorsi ◽  
Angela Malara ◽  
Andrea Donato ◽  
Nicola Donato ◽  
Salvatore Gianluca Leonardi ◽  
...  

In this study, UV irradiation was used to improve the response of indium oxide (In2O3) used as a CO sensing material for a resistive sensor operating in a low temperature range, from 25 °C to 150 °C. Different experimental conditions have been compared, varying UV irradiation mode and sensor operating temperature. Results demonstrated that operating the sensor under continuous UV radiation did not improve the response to target gas. The most advantageous condition was obtained when the UV LED irradiated the sensor in regeneration and was turned off during CO detection. In this operating mode, the semiconductor layer showed an apparent “p-type” behavior due to the UV irradiation. Overall, the effect was an improvement of the indium oxide response at 100 °C toward low CO concentrations (from 1 to 10 ppm) that showed higher results than in the dark, which is promising to extend the detection of CO with an In2O3-based sensor in the sub-ppm range.


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