Sputtering Yields for Gold Using Argon Gas Cluster Ion Beams

2012 ◽  
Vol 116 (44) ◽  
pp. 23735-23741 ◽  
Author(s):  
Li Yang ◽  
Martin P. Seah ◽  
Ian S. Gilmore
Keyword(s):  
Ion Beams ◽  
Argon Gas ◽  
Cluster Ion Beams ◽  
Cluster Ion ◽  
Sputtering Yields

scholarly journals Improved mass resolution and mass accuracy in TOF-SIMS spectra and images using argon gas cluster ion beams

2016 ◽  
Vol 11 (2) ◽  
pp. 02A321 ◽  
Author(s):  
Hyun Kyong Shon ◽  
Sohee Yoon ◽  
Jeong Hee Moon ◽  
Tae Geol Lee
Keyword(s):  
Mass Accuracy ◽  
Ion Beams ◽  
Mass Resolution ◽  
Argon Gas ◽  
Tof Sims ◽  
Cluster Ion Beams ◽  
Cluster Ion

Molecular Depth Profiling with Argon Gas Cluster Ion Beams

2015 ◽  
Vol 119 (27) ◽  
pp. 15316-15324 ◽  
Author(s):  
Kan Shen ◽  
Andreas Wucher ◽  
Nicholas Winograd
Keyword(s):  
Depth Profiling ◽  
Ion Beams ◽  
Argon Gas ◽  
Molecular Depth Profiling ◽  
Cluster Ion Beams ◽  
Cluster Ion

High rate etching of GaAs and GaP by gas cluster ion beams

2003 ◽  
Vol 792 ◽  
Author(s):  
Masahiro Nagano ◽  
Shingo Houzumi ◽  
Noriaki Toyoda ◽  
Susumu Yamada ◽  
Shirabe Akita ◽  
...  
Keyword(s):  
Cluster Size ◽  
Ion Beam ◽  
Ion Beams ◽  
High Rate ◽  
Cluster Ion Beams ◽  
Cluster Ion ◽  
New Processing ◽  
Gas Cluster Ion Beam ◽  
Ar Gas ◽  
Sputtering Yields

ABSTRACTGas cluster ion beam (GCIB) techniques have recently been proposed as new processing methods. We have been investigating the characteristics of GCIB techniques through sputtering GaAs and GaP by Ar gas cluster ion beams as a function of cluster size and acceleration energy. The Ar cluster size was selected by a magnetic spectrometer, and was obtained from the mass spectra measured by a time of flight mass spectrometer. The average sputtering yields of GaAs and GaP were 0–47 and 0–66 atoms/ion for 5–30 k V, respectively. The sputtering yields of GaAs and GaP were higher than those of an Ar monomer ion.

TOF-SIMS with Argon Gas Cluster Ion Beams: A Comparison with C60+

2011 ◽  
Vol 83 (10) ◽  
pp. 3793-3800 ◽  
Author(s):  
Sadia Rabbani ◽  
Andrew M. Barber ◽  
John S. Fletcher ◽  
Nicholas P. Lockyer ◽  
John C. Vickerman
Keyword(s):  
Ion Beams ◽  
Argon Gas ◽  
Tof Sims ◽  
Cluster Ion Beams ◽  
Cluster Ion

Sputtering yield measurements with size-selected gas cluster ion beams

2009 ◽  
Vol 1181 ◽  
Author(s):  
Kazuya Ichiki ◽  
Satoshi Ninomiya ◽  
Toshio Seki ◽  
Takaaki Aoki ◽  
Jiro Matsuo
Keyword(s):  
Cluster Size ◽  
Ion Beams ◽  
Cluster Ions ◽  
Energy Conditions ◽  
Si Substrates ◽  
Cluster Ion Beams ◽  
Cluster Ion ◽  
Sputtering Yield ◽  
Sputtering Yields ◽  
Good Agreement

AbstractAr cluster ions in the size range 1000�16000 atoms/cluster were irradiated onto Si substrates at incident energies of 10 and 20 keV and the sputtering yields were measured. Incident cluster ions were size-selected by using the time-of-flight (TOF) method. The sputtering yield was calculated from the sputtered Si volume and irradiation dose. It was found that the sputtering yields decreased with increasing incident cluster size under the same incident energy conditions. The integrated sputtering yields calculated from the sputtering yields measured for each size of Ar cluster ions, as well as the cluster size distributions, were in good agreement with experimental results obtained with nonselected Ar cluster ion beams.

Removal of Ar+ beam-induced damaged layers from polyimide surfaces with argon gas cluster ion beams

2010 ◽  
Vol 42 (9) ◽  
pp. 1453-1457 ◽  
Author(s):  
Takuya Miyayama ◽  
Noriaki Sanada ◽  
Scott R. Bryan ◽  
John S. Hammond ◽  
Mineharu Suzuki
Keyword(s):  
Ion Beams ◽  
Argon Gas ◽  
Cluster Ion Beams ◽  
Cluster Ion

Depth profiling organic/inorganic interfaces by argon gas cluster ion beams: sputter yield data for biomaterials, in-vitro diagnostic and implant applications

2013 ◽  
Vol 45 (13) ◽  
pp. 1859-1868 ◽  
Author(s):  
Peter J. Cumpson ◽  
Jose F. Portoles ◽  
Anders J. Barlow ◽  
Naoko Sano ◽  
Mark Birch
Keyword(s):  
Depth Profiling ◽  
Ion Beams ◽  
Yield Data ◽  
Argon Gas ◽  
Cluster Ion Beams ◽  
In Vitro Diagnostic ◽  
Cluster Ion ◽  
Sputter Yield

Secondary ion emission from insulin film bombarded with methane and noble gas cluster ion beams

2013 ◽  
Vol 315 ◽  
pp. 300-303 ◽  
Author(s):  
Kousuke Moritani ◽  
Masanori Kanai ◽  
Kosuke Goto ◽  
Issei Ihara ◽  
Norio Inui ◽  
...  
Keyword(s):  
Noble Gas ◽  
Ion Beams ◽  
Secondary Ion Emission ◽  
Cluster Ion Beams ◽  
Cluster Ion ◽  
Ion Emission ◽  
Secondary Ion
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